Si4394DY Vishay Siliconix New Product N-Channel Reduced Qdg, Fast Switching WFETt FEATURES rDS(on) (W) ID (A) 0.00825 @ VGS = 10 V 15 D Extremely Low Qgd WFETt Technology for Switching Losses D TrenchFETr Power MOSFET D 100% Rg Tested 0.00975 @ VGS = 4.5 V 14 APPLICATIONS PRODUCT SUMMARY VDS (V) 30 D High-Side DC/DC Conversion − Notebook − Server D Synchronous Rectification D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4394DY—E3 (Lead Free) Si4394DY-T1—E3 (Lead Free with Tape and Reel) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "12 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Continuous Source Current (Diode Conduction)a IS L= 0.1 mH TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range 10 12 8 50 A 2.7 iAS PD V 15 IDM Pulsed Drain Current (10 ms Pulse Width) Avalanch Current ID Unit 1.3 45 2.7 1.4 1.9 0.9 TJ, Tstg −55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Symbol t v 10 sec Steady State Steady State RthJA RthJF Typical Maximum 32 42 68 90 16 20 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72713 S-40442—Rev. A, 15-Mar-04 www.vishay.com 1 Si4394DY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 0.6 IGSS Typ Max Unit 1.8 V VDS = 0 V, VGS = "12 V "100 nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55_C 5 Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea 30 VDS w 5 V, VGS = 10 V rDS(on) mA A VGS = 10 V, ID = 15 A 0.0066 0.00825 VGS = 4.5 V, ID = 14 A 0.0077 0.00975 gfs VDS = 15 V, ID = 15 A 65 VSD IS = 2.9 A, VGS = 0 V 0.73 W S 1.1 V Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 120 Total Gate Charge Qg 12.5 Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time VDS = 15 V, VGS = 0 V, f = 1 MHz pF 530 3.9 VDS = 15 V, VGS = 4.5 V, ID = 15 A nC 2.1 1.2 1.8 td(on) 13 20 tr 8 13 48 75 13 20 36 55 Rise Time Turn-Off Delay Time 1900 f = 1 MHz VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, Rg = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 0.8 IF = 2.9 A, di/dt = 100 A/ms W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 60 60 VGS = 10 thru 3 V 50 I D − Drain Current (A) I D − Drain Current (A) 50 40 30 20 10 2 3 4 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 20 TC = 125_C 25_C −55_C 0 1 30 10 2V 0 40 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS − Gate-to-Source Voltage (V) Document Number: 72713 S-40442—Rev. A, 15-Mar-04 Si4394DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Capacitance 2200 0.012 1760 Ciss C − Capacitance (pF) r DS(on) − On-Resistance ( W ) On-Resistance vs. Drain Current 0.015 VGS = 4.5 V 0.009 0.006 VGS = 10 V 0.003 1320 880 Coss 440 0.000 Crss 0 0 10 20 30 40 50 0 6 ID − Drain Current (A) Gate Charge 24 30 On-Resistance vs. Junction Temperature 1.8 VDS = 15 V ID = 15 A 5 VGS = 10 V ID = 15 A 1.6 rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 18 VDS − Drain-to-Source Voltage (V) 6 4 3 2 1 1.4 1.2 1.0 0.8 0 0 3 6 9 12 15 0.6 −50 18 −25 0 Qg − Total Gate Charge (nC) Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.040 r DS(on) − On-Resistance ( W ) TJ = 150_C 10 1 0.1 0.0 25 TJ − Junction Temperature (_C) 60 I S − Source Current (A) 12 TJ = 25_C 0.032 ID = 15 A 0.024 0.016 0.008 0.000 0.2 0.4 0.6 0.8 1.0 VSD − Source-to-Drain Voltage (V) Document Number: 72713 S-40442—Rev. A, 15-Mar-04 1.2 0 2 4 6 8 10 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si4394DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.4 200 160 ID = 250 mA −0.0 120 Power (W) V GS(th) Variance (V) 0.2 −0.2 80 −0.4 40 −0.6 −50 −25 0 25 50 75 100 125 0 0.001 150 0.1 0.01 1 10 Time (sec) TJ − Temperature (_C) 100 Safe Operating Area, Junction-to-Case Limited by rDS(on) I D − Drain Current (A) 10 1 ms 10 ms 1 100 ms 0.1 1s 10 s TC = 25_C Single Pulse dc 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 68_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 www.vishay.com 4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72713 S-40442—Rev. A, 15-Mar-04 Si4394DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 Document Number: 72713 S-40442—Rev. A, 15-Mar-04 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5