Si9410BDY New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V 8.1 0.033 @ VGS = 4.5 V 6.9 D TrenchFETr Power MOSFETS D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si9410BDY Si9410BDY-T1 (with Tape and Reel) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current (10 ms Pulse Width) IS TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range PD 6.2 6.5 IDM Continuous Source Current (Diode Conduction)a V 8.1 ID 5.0 A 30 2.1 1.2 2.5 1.5 1.6 0.9 TJ, Tstg Unit W _C - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol t v 10 sec M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot Steady State Steady State RthJA RthJF Typical Maximum 40 50 70 85 20 24 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72269 S-31409—Rev. A, 07-Jul-03 www.vishay.com 1 Si9410BDY New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 1.0 IGSS Typ Max Unit 3.0 V VDS = 0 V, VGS = "20 V "100 nA VDS = 24 V, VGS = 0 V 1 VDS = 24 V, VGS = 0 V, TJ = 55_C 5 Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea VDS w 5 V, VGS = 10 V rDS(on) Forward Transconductancea Diode Forward Voltagea mA 30 A VGS = 10 V, ID = 8.1 A 0.019 0.024 VGS = 4.5 V, ID = 6.9 A 0.026 0.033 gfs VDS = 15 V, ID = 8.1 A 20 VSD IS = 2.1 A, VGS = 0 V 0.8 1.2 15 23 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 2.5 Turn-On Delay Time td(on) 10 15 15 25 30 45 11 20 25 50 Rise Time VDS = 15 V, VGS = 10 V, ID = 8.1 A tr Turn-Off Delay Time VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 3.2 IF = 2.1 A, di/dt = 100 A/ms nC ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 30 30 VGS = 10 thru 5 V 4V 24 I D - Drain Current (A) I D - Drain Current (A) 24 18 12 6 18 12 TC = - 125_C 6 3V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) www.vishay.com 2 25_C 3.5 4.0 0 0.0 0.5 1.0 1.5 2.0 - 55_C 2.5 3.0 3.5 4.0 4.5 VGS - Gate-to-Source Voltage (V) Document Number: 72269 S-31409—Rev. A, 07-Jul-03 Si9410BDY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 1200 0.035 1000 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) 0.040 0.030 VGS = 4.5 V 0.025 0.020 VGS = 10 V 0.015 Ciss 800 600 400 Coss 0.010 200 0.005 0.000 Crss 0 0 5 10 15 20 25 30 0 5 10 ID - Drain Current (A) Gate Charge 25 30 On-Resistance vs. Junction Temperature 1.6 VDS = 15 V ID = 8.1 A r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 20 VDS - Drain-to-Source Voltage (V) 10 8 6 4 2 VGS = 10 V ID = 8.1 A 1.4 1.2 1.0 0.8 0 0 3 6 9 12 0.6 - 50 15 - 25 0 Qg - Total Gate Charge (nC) Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.10 r DS(on) - On-Resistance ( W ) TJ = 150_C 10 TJ = 25_C 1 0.0 25 TJ - Junction Temperature (_C) 30 I S - Source Current (A) 15 0.08 ID = 8.1 A 0.06 0.04 0.02 0.00 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Document Number: 72269 S-31409—Rev. A, 07-Jul-03 1.2 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 Si9410BDY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.4 50 40 ID = 250 mA - 0.0 Power (W) V GS(th) Variance (V) 0.2 - 0.2 30 20 - 0.4 10 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 125 0 10 -3 150 10 -2 10 -1 TJ - Temperature (_C) 1 10 100 600 Time (sec) Safe Operating Area 100 IDM Limited rDS(on) Limited P(t) = 0.0001 I D - Drain Current (A) 10 P(t) = 0.001 1 ID(on) Limited P(t) = 0.01 P(t) = 0.1 0.1 P(t) = 1 TA = 25_C Single Pulse P(t) = 10 dc BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 70_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 www.vishay.com 4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72269 S-31409—Rev. A, 07-Jul-03 Si9410BDY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 Document Number: 72269 S-31409—Rev. A, 07-Jul-03 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5