BAT240A Silicon Schottky Diode 3 Rectifier Schottky diode for telecommunication and industrial applications High reverse voltage For power supply 2 For clamping and protection in high voltage applications 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT240A 4Ms Pin Configuration 1=C1/A2 2 = C2 Package 3 = A1 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage VR 240 Peak reverse voltage VRM 250 Forward current IF 400 Surge forward current (t 10ms) IFSM 1 Total power dissipation, TS = 28 °C Ptot 400 Junction temperature Tj Storage temperature Tstg Value 80 Unit V mA A mW °C -55 ... 150 Thermal Resistance Junction - soldering point1) RthJS 305 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Jul-06-2001 BAT240A Electrical Characteristics at TA = 25 °C, unless otherwise specified. Symbol Parameter Values Unit min. typ. max. 240 - - DC characteristics Breakdown voltage V(BR) V I(BR) = 500 µA Reverse current µA IR VR = 200 V - 5 - VR = 240 - - 500 Forward voltage V VF IF = 10 mA - 0.325 - IF = 20 mA - 0.37 - IF = 50 mA - 0.47 - - 11.5 - AC characteristics Diode capacitance CT pF VR = 10 V, f = 1 MHz 2 Jul-06-2001 BAT240A Forward current IF = f (TS ) Forward current IF = f (VF ) TA = parameter 10 -1 500 mA A 400 10 -2 IF IF 350 300 250 80°C 65°C 45°C 25°C -40°C 200 10 -3 150 100 50 0 0 20 40 60 80 120 °C 100 10 -4 0.00 150 0.10 0.20 0.30 0.40 V TS 0.60 VF Permissible Pulse Load Permissible Pulse Load RthJS = f(tp ) IFmax / IFDC = f(tp) 10 3 10 3 K/W IFmax / IFDC - RthJS 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 1 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 3 Jul-06-2001 BAT240A Derating curve reverse voltage VR = f(TA ); tp = Parameter Duty cycle < 0.01 300 tp=300µs V tp=100ms VR DC 200 150 100 50 0 0 20 40 60 80 100 120 °C 150 TA 4 Jul-06-2001