BAT 60B Silicon Schottky Diode 2 • Rectifier Schottky diode for mobile communication 1 • Low voltage, low inductance • For power supply • For detection and step-up-conversion VPS05176 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BAT 60B blue/5 Q62702-A1189 1=C SOD-323 2=A Maximum Ratings Parameter Symbol Value Diode reverse voltage VR 10 V Forward current IF 3 A Surge forward current (t < 10ms) IFSM 5 Total power dissipation, T S = 28 °C Ptot 1350 Junction temperature Tj Storage temperature Tstg 150 Unit mW °C -55...+150 Thermal Resistance Junction - ambient 1) Junction - soldering point RthJA ≤ 160 RthJS ≤ 90 K/W 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu Semiconductor Group 1 Jan-20-1999 BAT 60B Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC characteristics Reverse current µA IR VR = 5 V - 5 - VR = 8 V - 10 - VR = 5 V, TA = 80 °C - 100 - VR = 8 V, TA = 80 °C - 410 - Reverse current IR Forward voltage V VF I F = 10 mA - 0.24 - I F = 100 mA - 0.3 - I F = 1000 mA - 0.4 - - 25 - AC characteristics Diode capacitance CT pF VR = 5 V, f = 1 MHz Semiconductor Group 2 Jan-20-1999 BAT 60B Forward current IF = f (TA*;TS) Reverse current IR = f (TA) * Package mounted on epoxy VR = 8V 10 -1 3200 A mA 10 -2 2400 IR IF 10 -3 2000 TS 10 -4 1600 1200 TA 10 -5 800 10 -6 400 0 0 20 40 60 80 120 °C 100 10 -7 -20 150 0 20 40 60 80 100 120 °C TA,TS 160 TA Permissible Pulse Load Permissible Pulse Load R thJS = f(t p) IFmax / IFDC = f(tp) 10 2 10 2 IFmax / IFDC RthJS K/W 10 1 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -6 10 0 tp Semiconductor Group 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 3 Jan-20-1999