BAT66... Silicon Schottky Diode Power rectifier diode For low-loss, fast-recovery rectification, meter protection, bias isolation and clamping purpose BAT66-05 4 D 1 1 D 2 2 3 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAT66-05 Package SOT223 Configuration common cathode Marking BAT66-05 Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage VR 30 V Forward current IF 2 A Surge forward current, (t 10ms) IFSM 10 Average forward current (50/60Hz, sinus) IFAV 1 Total power dissipation Ptot 1.2 W Junction temperature Tj 150 °C Storage temperature Tstg Thermal Resistance Parameter Symbol Junction - soldering point1) RthJS TS 126°C 1For -55 ... 150 Value Unit 20 K/W calculation of RthJA please refer to Application Note Thermal Resistance 1 Feb-14-2003 BAT66... Electrical Characteristics at T A = 25°C, unless otherwise specified Symbol Values Parameter min. typ. max. DC Characteristics Reverse current IR µA VR = 25 V - - 10 VR = 25 V, TA = 85 °C - - 1000 Forward voltage V VF I F = 10 mA - 0.28 0.35 I F = 100 mA - 0.35 - IF = 1 A - 0.47 0.6 - 30 40 AC Characteristics Diode capacitance CT Unit pF VR = 10 V, f = 1 MHz 2 Feb-14-2003 BAT66... Reverse current IR = (VR) TA = Parameter BAT 66-05 10 4 ΙR Forward current IF = (VF) EHB00063 µA ΙR TA = 125 ˚C 10 3 10 3 BAT 66-05 EHB00062 mA 10 2 85 ˚C 10 2 TA = 25 ˚C 85 ˚C 10 1 10 1 10 10 0 25 ˚C 0 10 -1 10 -1 0 10 20 V 30 VR 0 0.25 0.5 V 0.75 VF Forward current IF = (TS ) 2400 mA IF 1600 1200 800 400 0 0 15 30 45 60 75 90 105 120 °C 150 TS 3 Feb-14-2003