BDW24/A/B/C BDW24/A/B/C Hammer Drivers, Audio Amplifiers Applications • Power Darlington TR • Complement to BDW23, BDW23A, BDW23B and BDW23C respectively TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BDW24 : BDW24A : BDW24B : BDW24C - 45 - 60 - 80 - 100 V V V V Collector-Emitter Voltage : BDW24 : BDW24A : BDW24B : BDW24C - 45 - 60 - 80 - 100 V V V V Collector-Base Voltage VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -6 A ICP *Collector Current (Pulse) -8 A IB Base Current PC Collector Dissipation (TC=25°C) TJ TSTG - 0.2 A 50 W Junction Temperature 150 °C Storage Temperature - 65 ~ 150 °C ©2000 Fairchild Semiconductor International Rev. A, February 2000 Symbol VCEO(sus) ICBO ICEO Parameter * Collector-Emitter Sustaining Voltage : BDW24 : BDW24A : BDW24B : BDW24C Test Condition Min. IC = - 100mA, IB = 0 - 45 - 60 - 80 - 100 Max. Units V V V V Collector Cut-off Current : BDW24 : BDW24A : BDW24B : BDW24C VCB = - 45V, IE = 0 VCB = - 60V, IE = 0 VCB = - 80V, IE = 0 VCB = - 100V, IE = 0 - 200 - 200 - 200 - 200 µA µA µA µA : BDW24 : BDW24A : BDW24B : BDW24C VCE = - 22V, IB = 0 VCE = - 30V, IB = 0 VCE = - 40V, IB = 0 VCE = - 50V, IB = 0 - 500 - 500 - 500 - 500 µA µA µA µA -2 mA Collector Cut-off Current IEBO Emitter Cut-off Current VEB = - 5V, IC = 0 hFE * DC Current Gain VCE = - 3V, IC = - 1A VCE = - 3V, IC = - 2A VCE = - 3V, IC = - 6A VCE(sat) Typ. * Collector-Emitter Saturation Voltage IC = - 2A, IB = - 8mA IC = - 6A, IB = - 60mA 1000 750 100 20000 -2 -3 V V VBE(sat) * Base-Emitter Saturation Voltage IC = - 2A, IB = - 8mA - 2.5 V VBE(on) * Base-Emitter ON Voltage VCE = - 3V, IC = - 1A VCE = - 3V, IC = - 6A - 2.5 -3 V V VF * Parallel Diode Forward Voltage IF = - 2A - 1.8 V * Pulse Test: PW=300µs, duty Cycle =1.5% Pulsed ©2000 Fairchild Semiconductor International Rev. A, February 2000 BDW24/A/B/C Electrical Characteristics TC=25°C unless otherwise noted BDW24/A/B/C Typical Characteristics 10000 VCE(sat)[V], SATURATION VOLTAGE hFE, DC CURRENT GAIN VCE = -3V 1000 100 -0.1 -1 IC = 250 IB -2.4 -2.0 -1.6 -1.2 -0.8 -0.4 -0.0 -0.1 -10 -1 IC[A], COLLECTOR CURRENT -10 IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage -100 -8 VCE = -3V IC[A], COLLECTOR CURRENT -6 -5 -4 -3 -2 -1 -0 -0.0 IC(max). Pulsed -10 10µ s IC(max). Continuous 100µ s DC IC[A], COLLECTOR CURRENT -7 -1 BDW24 BDW24A BDW24B BDW24C 1ms 10ms -0.1 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 -3.2 -3.6 -4.0 -1 -10 -100 -1000 VCE[V], COLLECTOR-EMITTER VOLTAGE VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter On Voltage Figure 4. Safe Operating Area 80 PC[W], POWER DISSIPATION 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 200 o TC[ C], CASE TEMPERATURE Figure 5. Power Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 BDW24/A/B/C Package Demensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. E