Order this document by MJ10015/D SEMICONDUCTOR TECHNICAL DATA $% "! "($ $!&"! $!%%&"$% (& % &&$ #'# " 50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS The MJ10015 and MJ10016 Darlington transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications such as: • • • • • Switching Regulators Motor Controls Inverters Solenoid and Relay Drivers Fast Turn–Off Times 1.0 µs (max) Inductive Crossover Time — 20 Amps 2.5 µs (max) inductive Storage Time — 20 Amps • Operating Temperature Range –65 to + 200_C • Performance Specified for Reversed Biased SOA with Inductive Load Switching Times with Inductive Loads Saturation Voltages Leakage Currents ≈ 50 CASE 197–05 TO–204AE TYPE (TO–3 TYPE) ≈8 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v MAXIMUM RATINGS Rating Symbol MJ10015 MJ10016 Unit Collector–Emitter Voltage VCEO 400 500 Vdc Collector–Emitter Voltage VCEV 600 700 Vdc Emitter Base Voltage VEB 8.0 Vdc Collector Current — Continuous — Peak (1) IC ICM 50 75 Adc Base Current — Continous — Peak (1) IB IBM 10 15 Adc Total Power Dissipation @ TC = 25_C @ TC = 100_C Derate above 25_C PD 250 143 1.43 Watts TJ, Tstg – 65 to + 200 _C Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 0.7 _C/W TL 275 _C Operating and Storage Junction Temperature Range W/_C THERMAL CHARACTERISTICS Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. SWITCHMODE is a trademark of Motorola, Inc. REV 1 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Typ Max 400 500 — — — — Unit OFF CHARACTERISTICS (1) Collector–Emitter Sustaining Voltage (Table 1) (IC = 100 mA, IB = 0, Vclamp = Rated VCEO) VCEO(sus) MJ10015 MJ10016 Vdc Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc) ICEV — — 0.25 mAdc Emitter Cutoff Current (VEB = 2.0 Vdc, IC = 0) IEBO — — 350 mAdc SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased Clamped Inductive SOA with Base Reverse Biased IS/b See Figure 7 RBSOA See Figure 8 ON CHARACTERISTICS (1) DC Current Gain (IC = 20 Adc, VCE = 5.0 Vdc) (IC = 40 Adc, VCE = 5.0 Vdc) hFE — 25 10 — — — — — — — — 2.2 5.0 Collector–Emitter Saturation Voltage (IC = 20 Adc, IB = 1.0 Adc) (IC = 50 Adc, IB = 10 Adc) VCE(sat) Base–Emitter Saturation Voltage (IC = 20 Adc, IB = 1.0 Adc) VBE(sat) — — 2.75 Vdc Vf — 2.5 5.0 Vdc Cob — — 750 pF td — 0.14 0.3 µs tr — 0.3 1.0 µs ts — 0.8 2.5 µs tf — 0.3 1.0 µs tsv — 1.0 2.5 µs tc — 0.36 1.0 µs Diode Forward Voltage (2) (IF = 20 Adc) Vdc DYNAMIC CHARACTERISTIC Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 100 kHz) SWITCHING CHARACTERISTICS Resistive Load (Table 1) Delay Time Rise Time Storage Time (VCC = 250 Vdc, IC = 20 A, IB1 = 1.0 Adc, VBE(off) = 5 Vdc, tp = 25 µs 2%). Duty Cycle Fall Time Inductive Load, Clamped (Table 1) Storage Time Crossover Time (IC = 20 A(pk), Vclamp = 250 V, IB1 = 1.0 A, VBE(off) = 5.0 Vdc) (1) Pulse Test: Pulse Width = 300 µs, Duty Cycle 2%. (2) The internal Collector–to–Emitter diode can eliminate the need for an external diode to clamp inductive loads. (2) Tests have shown that the Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast recovery rectifiers. 2 Motorola Bipolar Power Transistor Device Data TYPICAL CHARACTERISTICS 2.4 2.0 50 TC = 25°C VCE = 5.0 V 20 IC/IB = 10 V, VOLTAGE (VOLTS) hFE, DC CURRENT GAIN 100 1.6 1.2 TJ = 25°C 10 0.8 TJ = 150°C 5.0 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (AMPS) 0.4 50 Figure 1. DC Current Gain 0.5 10 2.0 5.0 IC, COLLECTOR CURRENT (AMP) 1.0 20 50 Figure 2. Collector–Emitter Saturation Voltage 104 2.8 VCE = 250 V IC/IB = 10 2.0 TJ = 25°C 1.6 1.2 0.8 0.5 TJ = 150°C 1.0 2.0 5.0 103 IC, COLLECTOR CURRENT ( µA) V, VOLTAGE (VOLTS) 2.4 10 20 50 TJ = 125°C 102 100°C 75°C 101 REVERSE FORWARD 100 25°C 10–1 – 0.2 0 + 0.2 + 0.4 + 0.6 IC, COLLECTOR CURRENT (AMP) VBE, BASE–EMITTER VOLTAGE (VOLTS) Figure 3. Base–Emitter Saturation Voltage Figure 4. Collector Cutoff Region + 0.8 C ob , OUTPUT CAPACITANCE (pF) 1500 1000 TJ = 25°C 500 300 200 100 0.4 1.0 100 4.0 10 40 VR, REVERSE VOLTAGE (VOLTS) 400 Figure 5. Output Capacitance Motorola Bipolar Power Transistor Device Data 3 Table 1. Test Conditions for Dynamic Performance VCEO(sus) VCEX AND INDUCTIVE SWITCHING RESISTIVE SWITCHING INDUCTIVE TEST CIRCUIT TURN–ON TIME 20 Ω 1 INPUT CONDITIONS 1 5V 2 TUT 0 1 INPUT 2 SEE ABOVE FOR DETAILED CONDITIONS CIRCUIT VALUES PW Varied to Attain IC = 100 mA TEST CIRCUITS RS = 0.1 Ω TURN–OFF TIME Use inductive switching driver as the input to the resistive test circuit. Rcoil 1N4937 OR EQUIVALENT SEE ABOVE FOR DETAILED CONDITIONS IC(pk) Lcoil Vclamp VCC = 250 V RL = 12.5 Ω Pulse Width = 25 µs OUTPUT WAVEFORMS TUT t pk ) TUT VCC 1 Lcoil (IC t2 ≈ VCC TIME Lcoil (IC t1 ≈ tf VCE or Vclamp RESISTIVE TEST CIRCUIT t1 Adjusted to Obtain IC tf Clamped t t1 RS = 0.1 Ω 2 IB1 adjusted to obtain the forced hFE desired VCC Lcoil = 180 µH Rcoil = 0.05 Ω VCC = 20 V INDUCTIVE TEST CIRCUIT INPUT IB1 Lcoil Vclamp 2 Lcoil = 10 mH, VCC = 10 V Rcoil = 0.7 Ω Vclamp = VCEO(sus) 1 Rcoil 1N4937 OR EQUIVALENT pk ) 2 VClamp RL VCC Test Equipment Scope — Tektronix 475 or Equivalent t2 * Adjust – V such that VBE(off) = 5 V except as required for RBSOA (Figure 8). IC pk Vclamp 90% Vclamp IC tsv 90% IC trv tfi tti and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined. tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp trv = Voltage Rise Time, 10 – 90% Vclamp tfi = Current Fall Time, 90 – 10% IC tti = Current Tail, 10 – 2% IC tc = Crossover Time, 10% Vclamp to 10% IC For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from AN–222: ā tc VCE IB 10% Vclamp 90% IB1 ā 10% IC pk ā 2% IC ā TIME PSWT = 1/2 VCC IC (tc) f Figure 6. Inductive Switching Measurements In general, t rv + t fi t c. However, at lower test currents this relationship may not be valid. As is common with most switching transistors, resistive switching is specified and has become a benchmark for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make this a “SWITCHMODE” transistor are the inductive switching speeds (tc and tsv) which are guaranteed. SWITCHING TIMES NOTE In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies 4 ā ā ^ Motorola Bipolar Power Transistor Device Data The Safe Operating Area figures shown in Figures 7 and 8 are specified ratings for these devices under the test conditions shown. IC, COLLECTOR CURRENT (AMPS) 50 20 10 5.0 dc MJ10015 MJ10016 TC = 25°C 0.2 0.1 0.05 0.02 0.01 0.005 1.0 BONDING WIRE LIMIT THERMAL LIMIT (SINGLE PULSE) SECOND BREAKDOWN LIMIT 2.0 20 500 1000 5.0 10 50 100 200 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 7. Forward Bias Safe Operating Area IC, COLLECTOR CURRENT (AMPS) 50 40 TURN–OFF LOAD LINE BOUNDARY FOR MJ10016 THE LOCUS FOR MJ10015 IS 100 V LESS 30 u 10 20 IC IB1 10 VBE(off) = 5.0 V TC = 25°C 0 0 200 300 400 100 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) FORWARD BIAS There are two Iimitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 7 is based on TC = 25_C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC ≥ 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 7 may be found at any case temperature by using the appropriate curve on Figure 9. 10 µs 2.0 1.0 0.5 SAFE OPERATING AREA INFORMATION REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn–off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage–current condition allowable during reverse biased turn–off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 8 gives the complete RBSOA characteristics. 500 Figure 8. Reverse Bias Switching Safe Operating Area 10 9 FORWARD BIAS SECOND BREAKDOWN DERATING 80 IB2(pk) , BASE CURRENT (AMP) POWER DERATING FACTOR (%) 100 60 THERMAL DERATING 40 20 8 7 6 5 IC = 20 A 4 3 2 SEE TABLE 1 FOR CONDITIONS, FIGURE 6 FOR WAVESHAPE. 1 0 0 40 80 120 TC, CASE TEMPERATURE (°C) 160 Figure 9. Power Derating Motorola Bipolar Power Transistor Device Data 200 0 0 1 2 3 4 5 6 7 8 VBE(off), REVERSE BASE VOLTAGE (VOLTS) Figure 10. Typical Reverse Base Current versus VBE(off) With No External Base Resistance 5 PACKAGE DIMENSIONS A N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C –T– E K SEATING PLANE DIM A B C D E G H K L N Q U D 2 PL 0.25 (0.010) U M T Q M Y M L –Q– –Y– 2 H G B INCHES MIN MAX 1.510 1.550 0.980 1.050 0.250 0.335 0.057 0.063 0.060 0.135 0.420 0.440 0.205 0.225 0.440 0.480 0.655 0.675 0.760 0.830 0.151 0.175 1.177 1.197 MILLIMETERS MIN MAX 38.35 39.37 24.89 26.67 6.35 8.51 1.45 1.60 1.52 3.43 10.67 11.18 5.21 5.72 11.18 12.19 16.64 17.15 19.30 21.08 3.84 4.19 29.90 30.40 1 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 197–05 TO–204AE TYPE (TO–3 TYPE) ISSUE J Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 6 ◊ Motorola Bipolar Power Transistor Device Data *MJ10015/D* MJ10015/D