DISCRETE SEMICONDUCTORS DATA SHEET BLV12 VHF power transistor Product specification September 1991 Philips Semiconductors Product specification VHF power transistor FEATURES • Emitter-ballasting resistors for an optimum temperature profile BLV12 QUICK REFERENCE DATA RF performance at Tmb = 25 °C in a common emitter test circuit. MODE OF OPERATION • Excellent reliability • Withstands full load mismatch. c.w. class-B PINNING - SOT123 PIN DESCRIPTION 1 collector 2 emitter 3 base 4 emitter VCE (V) PL (W) GP (dB) ηC (%) 175 12.5 30 >9 > 60 WARNING DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 4-lead SOT123 flange envelope with a ceramic cap. It is designed for common emitter, class-B operation in mobile VHF transmitters with a supply voltage of 12.5 V. All leads are isolated from the mounting flange. f (MHz) Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. PIN CONFIGURATION halfpage 1 4 c handbook, halfpage b MBB012 2 3 MSB057 Fig.1 Simplified outline and symbol. September 1991 2 e Philips Semiconductors Product specification VHF power transistor BLV12 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 36 V VCEO collector-emitter voltage open base − 16 V VEBO emitter-base voltage open collector − 3 V IC, IC(AV) collector current DC or average value − 6 A ICM collector current peak value f > 1 MHz − 18 A Ptot total power dissipation RF operation; f > 1 MHz; Tmb = 25 °C − 100 W Tstg storage temperature range −65 150 °C Tj junction operating temperature − 200 °C MRA372 120 handbook, halfpage Ptot (W) 100 II I 80 60 40 20 0 0 20 40 60 80 100 120 o Th ( C) (I) Continuous DC operation. (II) Short time operation during mismatch (f > 1 MHz) Fig.2 Power/temperature derating curve. THERMAL RESISTANCE SYMBOL PARAMETER Rth j-mb(RF) from junction to mounting base Rth mb-h from mounting base to heatsink September 1991 CONDITIONS Ptot = 100 W; Tmb = 25 °C 3 MAX. UNIT 1.75 K/W 0.3 K/W Philips Semiconductors Product specification VHF power transistor BLV12 CHARACTERISTICS Tj = 25 °C. SYMBOL PARAMETER CONDITIONS open emitter; Ic = 10 mA MIN. TYP. MAX. UNIT 36 − − V V(BR)CBO collector-base breakdown voltage V(BR)CEO collector-emitter breakdown voltage open base; Ic = 25 mA 16 − − V V(BR)EBO emitter-base breakdown voltage open collector; IE = 2 mA 3 − − V ICES collector-emitter leakage current VBE = 0; VCE = 16 V − − 10 mA hFE DC current gain VCE = 5 V; IC = 4 A 25 35 − fT transition frequency VCE = 12.5 V; IE = 4 A; f = 500 MHz − 1.6 − GHz Cc collector capacitance VCB = 12.5 V; IE = Ie = 0; f = 1 MHz − 90 100 pF Cre feedback capacitance VCE = 12.5 V; IC = 0; f = 1 MHz − 60 70 pF Cc-f collector-flange capacitance f = 1 MHz − 2 − pF MRA378 MRA374.1 250 handbook, halfpage handbook, 50 halfpage h Cc (pF) FE 200 40 VCE = 12.5 V 150 30 VCE = 5 V 20 100 50 10 0 0 0 4 8 12 IC (A) 0 16 4 8 12 16 VCB (V) IE = ie = 0; f = 1 MHz. Fig.3 DC current gain as a function of collector current, typical values. September 1991 Fig.4 4 Collector capacitance as a function of collector-base voltage, typical values. Philips Semiconductors Product specification VHF power transistor BLV12 MRA375 2 handbook, halfpage fT (GHz) 1.5 1 0.5 0 0 2 4 6 8 10 I E (A) VCB = 12.5 V. Fig.5 Transition frequency as a function of emitter current, typical values. September 1991 5 Philips Semiconductors Product specification VHF power transistor BLV12 APPLICATION INFORMATION RF performance at Tmb = 25 °C in a common emitter test circuit. f (MHz) MODE OF OPERATION c.w. class-B VCE (V) 175 PL (W) 12.5 ηC (%) GP (dB) >9 typ. 9.8 30 > 60 typ. 66 MRA371 MRA367 P (dB) handbook,50 halfpage η handbook, halfpage G η 12 P L (W) 40 (%) 70 GP 30 50 8 20 30 4 10 10 0 10 20 30 0 40 P (W) L 0 2 4 Class-B operation; VCE = 12.5 V; f = 175 MHz. Class-B operation; VCE = 12.5 V; f = 175 MHz. Fig.6 Fig.7 Gain and efficiency as functions of load power, typical values. 6 P (W) IN 8 Load power as a function of drive power, typical values. Ruggedness in class-B operation The BLV12 is capable of withstanding a full load mismatch corresponding to VSWR = 50:1 through all phases at rated output power, up to a supply voltage of 15.5 V, and f = 175 MHz. September 1991 6 Philips Semiconductors Product specification VHF power transistor BLV12 handbook, full pagewidth C6a L5 C1 50 Ω C3a L1 C7 L7 50 Ω T.U.T. C6b L4 C8 L6 C3b C2 L2 C4 C5 R1 L3 R2 L8 +VCC MGP247 Fig.8 Class-B test circuit at f = 175 MHz. List of components (see test circuit) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1 film dielectric trimmer 2.5 to 20 pF 2222 809 07004 C2, C8 film dielectric trimmer 4 to 40 pF 2222 809 07008 C3a, C3b 500 V ceramic capacitor 47 pF C4 500 V ceramic capacitor 120 pF C5 polyester capacitor 100 nF C6a, C6b 500 V ceramic capacitor 8.2 pF C7 film dielectric trimmer 5 to 60 pF L1 1 turn enamelled 1.6 mm copper wire L2 7 turns closely wound enamelled 0.5 mm copper wire L3, L8 grade 3B Ferroxcube wideband HF choke L4, L5 stripline (note 1) 12 mm × 6 mm; note 2 L6 2 turns enamelled 1.6 mm copper wire int. dia. 5 mm; length 6 mm; leads 2 × 5 mm L7 2 turns enamelled 1.6 mm copper wire int. dia. 4.5 mm; length 6 mm; leads 2 × 5 mm R1 0.25 W carbon resistor 10 Ω, 5% R2 0.25 W carbon resistor 4.7 Ω, 5% 2222 809 07011 int. dia. 9 mm; leads 2 × 5 mm 100 nH int. dia. 3 mm; leads 2 × 5 mm 4312 020 36640 Notes 1. The striplines are on a double copper-clad printed circuit board, with epoxy fibre-glass dielectric, thickness 1⁄16 inch. 2. Taps for capacitors C3a and C3b are situated 5 mm from the transistor. September 1991 7 Philips Semiconductors Product specification VHF power transistor BLV12 150 handbook, full pagewidth 72 L3 L8 +VCC C4 R1 C5 C3a L2 C1 C2 L6 C6a L5 L1 C7 C8 L7 L4 R2 C6b C3b rivet MGP245 The circuit and components are situated on one side of an epoxy fibre-glass board; the other side is unetched and serves as a ground plane. Earth connections are made by means of hollow rivets and copper straps under the emitters, to provide a direct contact between the component side and the ground plane. Fig.9 Component layout for 175 MHz class-B test circuit. September 1991 8 Philips Semiconductors Product specification VHF power transistor BLV12 MRA369 MRA370 3 handbook, halfpage 4 handbook, halfpage ZL (Ω) Zi 3 (Ω) 2 RL 2 ri 1 1 0 xi XL -1 0 100 150 200 f (MHz) -2 100 250 150 200 f (MHz) 250 Class-B operation; VCE = 12.5 V; PL = 30 W. Class-B operation; VCE = 12.5 V; PL = 30 W. Fig.10 Input impedance (series components) as a function of frequency, typical values. Fig.11 Load impedance (series components) as a function of frequency, typical values. MRA368 handbook, G halfpage P (dB) 15 10 handbook, halfpage 5 Zi ZL MBA451 0 100 150 200 250 f (MHz) Class-B operation; VCE = 12.5 V; PL = 30 W. Fig.12 Definition of transistor impedance. September 1991 Fig.13 Power gain as a function of frequency, typical values. 9 Philips Semiconductors Product specification VHF power transistor BLV12 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads SOT123A D A F q C B U1 w2 M C c H b L 4 3 α A p U3 U2 w1 M A B 1 2 H Q 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 F H L p Q q U1 U2 U3 w1 w2 mm 7.47 6.37 5.82 5.56 0.18 0.10 9.73 9.47 9.63 9.42 2.72 2.31 20.71 19.93 5.61 5.16 3.33 3.04 4.63 4.11 18.42 25.15 24.38 6.61 6.09 9.78 9.39 0.51 1.02 inches 0.294 0.251 0.229 0.007 0.219 0.004 0.182 0.725 0.162 0.99 0.96 0.26 0.24 0.385 0.370 0.02 0.04 OUTLINE VERSION 0.383 0.397 0.107 0.815 0.373 0.371 0.091 0.785 0.221 0.131 0.203 0.120 REFERENCES IEC JEDEC EIAJ SOT123A September 1991 α 45° EUROPEAN PROJECTION ISSUE DATE 97-06-28 10 Philips Semiconductors Product specification VHF power transistor BLV12 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1991 11