MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR8UM MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE OUTLINE DRAWING 2.8 ± 0.2 BCR8UM 10.2 4.5 15.5 1.27 ✽ φ3.8 ± 0.2 1.4 4.2 MAX 13.0 MIN TYPE NAME VOLTAGE CLASS Dimensions in mm 0.8 2.54 2.54 2.6 ± 0.4 4.5 0.6 ➀➁➂ ✽ Measurement point of case temperature ➁ ¡IT (RMS) ........................................................................ 8A ¡VDRM ..............................................................400V/600V ¡IFGT !, I RGT !, IRGT # ........................................... 15mA ¡Viso ........................................................................ 1500V ➀ ➀ T1 TERMINAL ➁ T2 TERMINAL ➂ ➂ GATE TERMINAL TO-220 APPLICATION Light dimmer MAXIMUM RATINGS Symbol Voltage class Parameter 8 12 Unit VDRM Repetitive peak off-state voltage ✽1 400 600 V VDSM Non-repetitive peak off-state voltage ✽1 500 720 V Symbol Conditions Parameter IT (RMS) RMS on-state current Commercial frequency, sine full wave 360° conduction, Tc=94°C ✽3 ITSM Surge on-state current I2t I2t PGM Peak gate power dissipation PG (AV) Average gate power dissipation VGM for fusing Ratings Unit 8 A 60Hz sinewave 1 full cycle, peak value, non-repetitive 80 A Value corresponding to 1 cycle of half wave 60Hz, surge on-state current 26 A2s 5 W 0.5 W Peak gate voltage 10 V IGM Peak gate current 2 Tj Junction temperature Storage temperature Tstg — Viso Weight Typical value Isolation voltage Ta=25°C, AC 1 minute, T 1 · T2 · G terminal to case A –40 ~ +125 °C –40 ~ +125 °C 2.3 g 1500 V ✽1. Gate open. Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR8UM MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol Parameter Limits Test conditions Min. Typ. Max. Unit IDRM Repetitive peak off-state current Tj=125°C, V DRM applied — — 2.0 mA VTM On-state voltage Tc=25°C, ITM=12A, Instantaneous measurement — — 1.5 V — — 1.5 V — — 1.5 V ! VFGT ! VRGT ! Gate trigger voltage ✽2 @ Tj=25°C, VD =6V, RL=6Ω, RG=330Ω VRGT # # — — 1.5 V IFGT ! ! — — 15 mA — — 15 mA — — 15 mA 0.2 — — V — — 3.0 °C/W IRGT ! Gate trigger current ✽2 @ Tj=25°C, VD =6V, RL=6Ω, RG=330Ω # IRGT # VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM R th (j-c) Thermal resistance Junction to case ✽3 ✽4 ✽2. Measurement using the gate trigger characteristics measurement circuit. ✽3. Case temperature is measured at the T2 terminal 1.5mm away from the molded case. ✽4. The contact thermal resistance R th (c-f) in case of greasing is 1.0°C/W. PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS RATED SURGE ON-STATE CURRENT 100 7 5 3 2 101 7 5 3 2 Tj = 125°C Tj = 25°C 100 7 5 3 2 10–1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 ON-STATE VOLTAGE (V) SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) 102 90 80 70 60 50 40 30 20 10 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR8UM MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE PG(AV) = 0.5W VGM = 10V PGM = 5W 101 7 5 3 2 IGM = 2A VGT = 1.5V 100 7 5 3 2 IFGT I , IRGT I , IRGT III 10–1 VGD = 0.2V 7 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) GATE VOLTAGE (V) 3 2 100 (%) GATE CHARACTERISTICS 103 7 5 4 3 2 TYPICAL EXAMPLE 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 GATE CURRENT (mA) JUNCTION TEMPERATURE (°C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) TYPICAL EXAMPLE 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 TRANSIENT THERMAL IMPEDANCE (°C/W) 103 7 5 4 3 2 102 2 3 5 7 103 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 JUNCTION TEMPERATURE (°C) CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM ON-STATE POWER DISSIPATION ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 16 160 14 140 CASE TEMPERATURE (°C) ON-STATE POWER DISSIPATION (W) GATE TRIGGER VOLTAGE (Tj = t°C) GATE TRIGGER VOLTAGE (Tj = 25°C) 100 (%) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 12 360° CONDUCTION 10 RESISTIVE, INDUCTIVE 8 LOADS 6 4 2 0 0 2 4 6 8 10 12 14 RMS ON-STATE CURRENT (A) 16 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 100 80 60 40 20 0 0 2 4 6 8 360° CONDUCTION RESISTIVE, INDUCTIVE LOADS 10 12 14 16 RMS ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR8UM MEDIUM POWER USE 60 RESISTIVE, 40 INDUCTIVE LOADS 20 NATURAL CONVECTION 0 0 2 4 6 10 12 14 60 40 20 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 RMS ON-STATE CURRENT (A) REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE HOLDING CURRENT VS. JUNCTION TEMPERATURE 100 (%) HOLDING CURRENT (Tj = t°C) HOLDING CURRENT (Tj = 25°C) 104 7 5 3 2 103 7 5 3 2 103 7 5 4 3 2 TYPICAL EXAMPLE 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 102 –60 –40 –20 0 20 40 60 80 100 120 140 102 7 5 3 2 80 RMS ON-STATE CURRENT (A) 105 7 TYPICAL EXAMPLE 5 3 2 JUNCTION TEMPERATURE (°C) JUNCTION TEMPERATURE (°C) LACHING CURRENT VS. JUNCTION TEMPERATURE BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) 103 7 5 3 2 ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 RESISTIVE, INDUCTIVE LOADS 100 0 16 T2+, G– TYPICAL EXAMPLE DISTRIBUTION ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, 101 7 5 3 + + 2 T2–, G – TYPICAL T2 , G EXAMPLE 100 –40 0 40 80 120 JUNCTION TEMPERATURE (°C) BREAKOVER VOLTAGE (Tj = t°C) BREAKOVER VOLTAGE (Tj = 25°C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = t°C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C) LACHING CURRENT (mA) 8 AMBIENT TEMPERATURE (°C) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 120 120 t2.3 100 100 100 t2.3 80 60 60 t2.3 100 (%) AMBIENT TEMPERATURE (°C) INSULATED TYPE, GLASS PASSIVATION TYPE 160 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100120 140 JUNCTION TEMPERATURE (°C) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR8UM MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE TYPICAL EXAMPLE Tj = 125°C BREAKOVER VOLTAGE (dv/dt = xV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) 140 100 (%) 160 GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH I QUADRANT 120 III QUADRANT 100 80 #2 #1 60 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 100 (%) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 103 7 5 4 3 2 TYPICAL EXAMPLE IFGT I IRGT I IRGT III 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE CURRENT PULSE WIDTH (µs) GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6Ω 6Ω A 6V V A 6V RG TEST PROCEDURE 1 V RG TEST PROCEDURE 2 6Ω A 6V V RG TEST PROCEDURE 3 Feb.1999