VISHAY TSHF5200

TSHF5200
Vishay Telefunken
High Speed IR Emitting Diode in ø 5 mm (T–1¾) Package
Description
94 8390
TSHF5200 is a high speed infrared light emitting diode
in GaAlAs on GaAlAs double hetero (DH) technology,
molded on copper frame, in a clear, untinted plastic
package.
The new technology combines the high speed of DH–
GaAlAs with the efficiency of standard GaAlAs and the
low forward voltage of the standard GaAs technology.
The TSHF5200 emitter is suitable for serial infrared
links according to the IrDA–standard.
Features
D
D
D
D
D
D
D
D
D
High modulation bandwidth (10 MHz)
High radiant power
Low forward voltage
Suitable for high pulse current operation
Standard T–1¾ (ø 5 mm) package
Angle of half intensity ϕ = ± 10°
Peak wavelength lp = 870 nm
High reliability
Good spectral matching to Si photodetectors
Applications
Infrared high speed remote control and free air data transmission systems with high modulation frequencies or
high data transmission rate requirements.
TSHF5200 is ideal for the design of transmission systems according to IrDA requirements and for carrier frequency based systems (e.g. ASK / FSK – coded, 450 kHz or 1.3 MHz).
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Reverse Voltage
Forward Current
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Document Number 81023
Rev. 3, 02-Aug-99
Test Conditions
tp/T = 0.5, tp = 100 ms
tp = 100 ms
t
x 5sec, 2 mm from case
Symbol
VR
IF
IFM
IFSM
PV
Tj
Tamb
Tstg
Tsd
RthJA
Value
5
100
200
1.5
160
100
–40...+100
–40...+100
260
270
Unit
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
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TSHF5200
Vishay Telefunken
Basic Characteristics
Tamb = 25_C
Parameter
Forward Voltage
g
Temp. Coefficient of VF
Reverse Current
Junction Capacitance
Radiant Intensity
y
Radiant Power
Temp. Coefficient of fe
Angle of Half Intensity
Peak Wavelength
Spectral Bandwidth
Temp. Coefficient of lp
Rise Time
Fall Time
Test Conditions
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 ms
IF = 100mA
VR = 5 V
VR = 0 V, f = 1 MHz, E = 0
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 ms
IF = 100 mA, tp = 20 ms
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 100 mA
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Symbol
VF
VF
TKVF
IR
Cj
Ie
Ie
fe
TKfe
ϕ
lp
Dl
TKlp
tr
tf
Min
Typ
1.35
2.4
–1.7
Max
1.6
10
50
160
100
1000
35
–0.7
±10
870
40
0.2
30
30
Unit
V
V
mV/K
mA
pF
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
Document Number 81023
Rev. 3, 02-Aug-99
TSHF5200
Vishay Telefunken
Typical Characteristics (Tamb = 25_C unless otherwise specified)
104
160
IF – Forward Current ( mA )
PV – Power Dissipation ( mW )
180
140
120
100
80
60
40
103
102
101
20
0
100
0
10 20 30 40 50 60 70 80 90 100
Tamb – Ambient Temperature ( °C )
16084
0
Figure 1. Power Dissipation vs. Ambient Temperature
V Frel – Relative Forward Voltage
IF – Forward Current ( mA )
4
3
1.2
100
80
60
40
20
1.1
IF = 10 mA
1.0
0.9
0.8
0
0.7
0
10 20 30 40 50 60 70 80 90 100
Tamb – Ambient Temperature ( °C )
16085
0
101
20
40
60
80
100
Tamb – Ambient Temperature ( °C )
94 7990 e
Figure 2. Forward Current vs. Ambient Temperature
Figure 5. Relative Forward Voltage vs.
Ambient Temperature
1000
Tamb<57_C
I e – Radiant Intensity ( mW/sr )
I F – Forward Current ( A )
2
Figure 4. Forward Current vs. Forward Voltage
120
tp / T = 0.01, IFSM = 1 A
0.02
100
1
VF – Forward Voltage ( V )
94 8880
0.05
0.1
0.2
100
10
1
0.5
10–1
10–2
16086
0.1
10–1
100
101
tp – Pulse Duration ( ms )
102
Figure 3. Pulse Forward Current vs. Pulse Duration
Document Number 81023
Rev. 3, 02-Aug-99
100
94 8881
101
102
103
IF – Forward Current ( mA )
104
Figure 6. Radiant Intensity vs. Forward Current
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TSHF5200
Vishay Telefunken
1.25
Fe – Radiant Power ( mW )
Fe – Radiant Power ( mW )
1000
100
10
1
1.0
0.75
0.5
0.25
0
780
0.1
100
101
102
103
IF – Forward Current ( mA )
94 8007 e
104
Figure 7. Radiant Power vs. Forward Current
Figure 9. Relative Radiant Power vs. Wavelength
0°
Ie rel – Relative Radiant Intensity
1.6
I e rel / Fe rel
1.2
0.8
0.4
980
880
l – Wavelength ( nm )
95 9886
10
°
20
°
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
0
–10 0 10
94 8882
50
100
140
Tamb – Ambient Temperature ( °C )
Figure 8. Rel. Radiant Intensity\Power vs.
Ambient Temperature
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0.6
0.4
0.2
0
0.2
0.4
0.6
15989
Figure 10. Relative Radiant Intensity vs.
Angular Displacement
Document Number 81023
Rev. 3, 02-Aug-99
TSHF5200
Vishay Telefunken
Dimensions in mm
95 10916
Document Number 81023
Rev. 3, 02-Aug-99
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TSHF5200
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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Document Number 81023
Rev. 3, 02-Aug-99