TSUS520. Vishay Telefunken GaAs Infrared Emitting Diodes in ø 5 mm (T–1¾) Package Description 94 8390 TSUS520. series are infrared emitting diodes in standard GaAs on GaAs technology, molded in a clear, blue–grey tinted plastic package. The devices are spectrally matched to silicon photodiodes and phototransistors. Features D D D D D D D D D Low cost emitter Low forward voltage High radiant power and radiant intensity Suitable for DC and high pulse current operation Standard T–1¾ (ø 5 mm) package Angle of half intensity ϕ = ± 15° Peak wavelength lp = 950 nm High reliability Good spectral matching to Si photodetectors Applications Infrared remote control and free air transmission systems with low forward voltage and low cost requirements in combination with PIN photodiodes or phototransistors. Absolute Maximum Ratings Tamb = 25_C Parameter Reverse Voltage Forward Current Peak Forward Current Surge Forward Current Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Document Number 81055 Rev. 2, 20-May-99 Test Conditions tp/T = 0.5, tp = 100 ms tp = 100 ms t x5 sec, 2 mm from case Symbol VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 150 300 2.5 210 100 –55...+100 –55...+100 260 375 Unit V mA mA A mW °C °C °C °C K/W www.vishay.de • FaxBack +1-408-970-5600 1 (6) TSUS520. Vishay Telefunken Basic Characteristics Tamb = 25_C Parameter Forward Voltage Temp. Coefficient of VF Reverse Current Junction Capacitance Temp. Coefficient of fe Angle of Half Intensity Peak Wavelength Spectral Bandwidth Temp. Coefficient of lp Rise Time Fall Time Test Conditions IF = 100 mA, tp = 20 ms IF = 100mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 20 mA Symbol VF TKVF IR Cj TKfe ϕ Min Max 1.7 100 30 –0.8 ±15 950 50 0.2 800 400 800 400 lp Dl IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 1.5 A IF = 100 mA IF = 1.5 A Typ 1.3 –1.3 TKlp tr tr tf tf Unit V mV/K mA pF %/K deg nm nm nm/K ns ns ns ns Type Dedicated Characteristics Tamb = 25_C Parameter Forward Voltage g Test Conditions IF=1.5A, tp=100ms IF=100mA, tp=20ms Radiant Intensity IF=1.5A, tp=100ms Radiant Power IF=100mA, tp=20ms www.vishay.de • FaxBack +1-408-970-5600 2 (6) Type TSUS5200/5201 TSUS5202 TSUS5200 TSUS5201 TSUS5202 TSUS5200 TSUS5201 TSUS5202 TSUS5200 TSUS5201 TSUS5202 Symbol VF VF Ie Ie Ie Ie Ie Ie fe fe fe Min 10 15 20 95 120 170 Typ 2.2 2.2 20 25 30 180 230 280 13 14 15 Max 3.4 2.7 Unit V V mW/sr mW/sr mW/sr mW/sr mW/sr mW/sr mW mW mW Document Number 81055 Rev. 2, 20-May-99 TSUS520. Vishay Telefunken Typical Characteristics (Tamb = 25_C unless otherwise specified) 104 IF – Forward Current ( mA ) PV – Power Dissipation ( mW ) 250 200 150 RthJA 100 50 20 40 60 80 100 Tamb – Ambient Temperature ( °C ) 94 7957 e 101 100 0 V Frel – Relative Forward Voltage 150 100 RthJA 50 0 1.1 IF = 10 mA 1.0 0.9 0.8 0.7 0 20 40 60 80 100 Tamb – Ambient Temperature ( °C ) 94 7988 e 0 20 40 60 80 100 Tamb – Ambient Temperature ( °C ) 94 7990 e Figure 2. Forward Current vs. Ambient Temperature Figure 5. Relative Forward Voltage vs. Ambient Temperature 101 1000 I e – Radiant Intensity ( mW/sr ) I F – Forward Current ( A ) 4 3 1.2 200 IFSM = 2.5 A ( Single Pulse ) tp / T = 0.01 0.05 0.1 0.5 1.0 10–1 10–2 94 7989 e 2 Figure 4. Forward Current vs. Forward Voltage 250 100 1 VF – Forward Voltage ( V ) 94 7996 e Figure 1. Power Dissipation vs. Ambient Temperature IF – Forward Current ( mA ) 102 10–1 0 0 103 TSUS 5202 100 TSUS 5200 10 TSUS 5201 1 10–1 100 101 102 tp – Pulse Duration ( ms ) Figure 3. Pulse Forward Current vs. Pulse Duration Document Number 81055 Rev. 2, 20-May-99 100 94 7991 e 101 102 103 IF – Forward Current ( mA ) 104 Figure 6. Radiant Intensity vs. Forward Current www.vishay.de • FaxBack +1-408-970-5600 3 (6) TSUS520. Vishay Telefunken 1.25 Fe rel – Relative Radiant Power Fe – Radiant Power ( mW ) 1000 TSUS 5202 100 TSUS 5200 10 1 1.0 0.75 0.5 0.25 IF = 100 mA 0 900 0.1 100 101 102 103 IF – Forward Current ( mA ) 94 7992 e 104 Figure 7. Radiant Power vs. Forward Current Figure 9. Relative Radiant Power vs. Wavelength 0° I e rel – Relative Radiant Intensity 1.6 I e rel ; Fe rel 1.2 IF = 20 mA 0.8 0.4 1000 950 l – Wavelength ( nm ) 94 7994 e 10 ° 20 ° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0 –10 0 10 94 7993 e 50 100 140 Tamb – Ambient Temperature ( °C ) Figure 8. Rel. Radiant Intensity\Power vs. Ambient Temperature www.vishay.de • FaxBack +1-408-970-5600 4 (6) 0.6 0.4 0.2 0 0.2 0.4 0.6 94 7995 e Figure 10. Relative Radiant Intensity vs. Angular Displacement Document Number 81055 Rev. 2, 20-May-99 TSUS520. Vishay Telefunken Dimensions in mm 95 10916 Document Number 81055 Rev. 2, 20-May-99 www.vishay.de • FaxBack +1-408-970-5600 5 (6) TSUS520. Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.de • FaxBack +1-408-970-5600 6 (6) Document Number 81055 Rev. 2, 20-May-99