Previous Datasheet Index Next Data Sheet DISCRETE POWER DIODES and THYRISTORS DATA BOOK D-440 To Order Previous Datasheet Index Next Data Sheet Bulletin I25183/B ST103S SERIES Stud Version INVERTER GRADE THYRISTORS Features 105A All diffused design Center amplifying gate Guaranteed high dv/dt Guaranteed high di/dt High surge current capability Low thermal impedance High speed performance Typical Applications Inverters Choppers Induction heating All types of force-commutated converters Major Ratings and Characteristics Parameters ST103S Units 105 A 85 °C 165 A @ 50Hz 3000 A @ 60Hz 3150 A @ 50Hz 45 KA2s @ 60Hz 41 KA2s 400 to 800 V 10 to 25 µs - 40 to 125 °C IT(AV) @ TC IT(RMS) ITSM I2t V DRM /V RRM tq range TJ case style TO-209AC (TO-94) D-441 To Order Previous Datasheet Index Next Data Sheet ST103S Series ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V DRM /V RRM , maximum VRSM , maximum I DRM /I RRM max. Code repetitive peak voltage non-repetitive peak voltage @ TJ = TJ max. V V mA 04 400 500 08 800 900 Type number ST103S 30 Current Carrying Capability ITM Frequency ITM ITM o 180 el o 180 el 100µs 50Hz 400Hz 280 310 180 200 440 470 330 300 4730 2500 3630 1850 1000Hz 320 200 480 310 1530 1090 2500Hz 340 210 490 320 840 580 Recovery voltage Vr Voltage before turn-on Vd 50 50 50 50 50 V DRM V DRM Units 50 V DRM A V Rise of on-state current di/dt 50 50 - - - - A/µs Case temperature 60 85 60 85 60 85 °C Equivalent values for RC circuit 22Ω / 0.15µF 22Ω / 0.15µF 22Ω / 0.15µF On-state Conduction Parameter I T(AV) ST103S Units Max. average on-state current 105 A @ Case temperature 85 °C I T(RMS) Max. RMS on-state current I TSM I2 t 165 Max. peak, one half cycle, 3000 non-repetitive surge current 3150 Maximum I2t for fusing DC @ 76°C case temperature No voltage t = 8.3ms reapplied 2530 t = 10ms 100% VRRM 2650 t = 8.3ms reapplied Sinusoidal half wave, 45 t = 10ms No voltage Initial TJ = TJ max A 41 KA2s 29 Maximum I2√t for fusing 180° conduction, half sine wave t = 10ms 32 I 2 √t Conditions 450 KA2√s t = 8.3ms reapplied t = 10ms 100% VRRM t = 8.3ms reapplied t = 0.1 to 10ms, no voltage reapplied D-442 To Order Previous Datasheet Index Next Data Sheet ST103S Series Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics D-446 To Order Previous Datasheet Index Next Data Sheet ST103S Series Fig. 5 - Maximum Non-repetitive Surge Current Fig. 6 - Maximum Non-repetitive Surge Current Fig. 7 - On-state Voltage Drop Characteristics Fig. 8 - Thermal Impedance ZthJC Characteristic Fig. 10 - Reverse Recovery Current Characteristics Fig. 9 - Reverse Recovered Charge Characteristics D-447 To Order Previous Datasheet Index ST103S Series Fig. 11 - Frequency Characteristics Fig. 12 - Frequency Characteristics Fig. 13 - Frequency Characteristics D-448 To Order Next Data Sheet Previous Datasheet Index Next Data Sheet ST103S Series Fig. 14 - Maximum On-state Energy Power Loss Characteristics Fig. 15 - Gate Characteristics D-449 To Order Previous Datasheet Index Next Data Sheet ST103S Series On-state Conduction Parameter V TM Max. peak on-state voltage V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage r t1 Low level value of forward slope resistance r ST103S p V 1.40 mΩ 600 IL Typical latching current 1000 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > x π x IT(AV)), TJ = TJ max. 1.35 IH Conditions ITM= 300A, TJ = TJ max, t = 10ms sine wave pulse 1.32 High level value of forward slope resistance Maximum holding current t2 Units 1.73 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > x π x IT(AV)), TJ = TJ max. 1.30 mA T J = 25°C, I T > 30A T J = 25°C, V A= 12V, Ra = 6Ω, I G = 1A Switching Parameter di/dt Max. non-repetitive rate of rise of turned-on current t t d q Typical delay time Max. turn-off time ST103S 1000 Units Conditions A/µs TJ = TJ max, VDRM = rated VDRM TJ= 25°C, VDM = rated VDRM, ITM = 50A DC, t = 1µs p 0.80 Min 10 ITM = 2 x di/dt Max 25 µs Resistive load, Gate pulse: 10V, 5Ω source TJ = TJ max, ITM = 100A, commutating di/dt = 10A/µs VR = 50V, t = 200µs, dv/dt: see table in device code p Blocking Parameter dv/dt Maximum critical rate of rise of off-state voltage IRRM IDRM Max. peak reverse and off-state leakage current ST103S Units Conditions 500 V/µs TJ = TJ max., linear to 80% VDRM, higher value available on request 30 mA ST103S Units TJ = TJ max, rated V DRM/V RRM applied Triggering Parameter PGM Maximum peak gate power PG(AV) Maximum average gate power 5 IGM Max. peak positive gate current 5 +VGM Maximum peak positive gate voltage 20 -VGM Maximum peak negative gate voltage 5 IGT Max. DC gate current required to trigger VGT Max. DC gate voltage required to trigger Conditions 40 W TJ = TJ max, f = 50Hz, d% = 50 A TJ = TJ max, t ≤ 5ms V TJ = TJ max, t ≤ 5ms 200 mA 3 V p p TJ = 25°C, VA = 12V, Ra = 6Ω IGD Max DC gate current not to trigger 20 mA VGD Max. DC gate voltage not to trigger 0.25 V TJ = TJ max, rated VDRM applied D-443 To Order Previous Datasheet Index Next Data Sheet ST103S Series Thermal and Mechanical Specifications Parameter ST103S TJ Max. junction operating temperature range -40 to 125 T Max. storage temperature range -40 to 150 stg Units °C RthJC Max. thermal resistance, junction to case 0.195 RthCS Max. thermal resistance, case to heatsink 0.08 T Mounting torque, ± 10% 15.5 Nm (137) (Ibf-in) wt Approximate weight Case style Conditions DC operation K/W Mounting surface, smooth, flat and greased 14 Nm (120) (Ibf-in) 130 g Non lubricated threads Lubricated threads TO-209AC (TO-94) See Outline Table ∆RthJC Conduction (The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction 180° 0.034 Rectangular conduction Units 0.025 120° 0.040 0.042 90° 0.052 0.056 60° 0.076 0.079 30° 0.126 0.127 Conditions K/W TJ = TJ max. Ordering Information Table Device Code ST 10 3 S 08 P F N 0 1 2 3 4 5 6 7 8 9 1 - Thyristor 2 - Essential part number 3 - 3 = Fast turn off 4 - S = Compression bonding Stud 5 - Voltage code: Code x 100 = VRRM (See Voltage Ratings table) 6 - P = Stud Base 1/2" 20UNF 7 8 - Reapplied dv/dt code (for tq test condition) - tq code 9 - 0 = Eyelet terminals (Gate and Aux. Cathode Leads) dv/dt - tq combinations available dv/dt (V/µs) 1 = Fast-on terminals (Gate and Aux. Cathode Leads) 2 = Flag terminals (For Cathode and Gate Terminals) 10 - Critical dv/dt: None = 500V/µsec (Standard value) L 10 = 1000V/µsec (Special selection) 20 50 100 10 CN DN EN 12 CM DM EM 15 CL DL EL t (µs) q 18 CP DP EP 20 CK DK EK 25 ---*Standard part number. All other types available only on request. D-444 To Order 200 400 FN * FM FL * FP FK -- -HM HL HP HK HJ Previous Datasheet Index Next Data Sheet ST103S Series Outline Table CERAMIC HOUSING 16.5 (0.65) MAX. 8.5 (0.33) DIA. M IN . 2.6 (0.10) MAX. 170 (6.69 ) C.S. 0.4 mm (.0006 s.i.) )M 79 20 2 Fast-on Terminals RED CATHODE AMP. 280000-1 REF-250 WHITE GATE 215 (8.46) RED SHRINK 10 (0.39) WHITE SHRINK M AX. 12.5 (0.4 9) M A X . 22.5 (0.88) MAX. DIA. 2 1 ( 0.83 ) 29 (1 .14) M AX. 70 (2.75) MIN . SW 27 1/2"-20UNF-2A Case Style TO-209AC (TO-94) 29.5 (1.16) All dimensions in millimeters (inches) MAX. CERAMIC HOUSING FLAG TERMINALS 22.5 DIA. 5.2 (0.20) DIA. (0.89) MAX. Case Style TO-208AD (TO-83) 2 9 (1 . 1 4 ) M A X . 1 6 .5 S W 27 2.4 (0.09) 29.5 (1.16) D-445 To Order ( 0 .6 5 ) 1/2"-20UNF-2A All dimensions in millimeters (inches) 10 ( 0 .3 9 ) 7.5 (0.30) M A X. M AX . 2 1 ( 0 .8 3 ) 1 2 .5 (0 .4 9 ) 4 9 ( 1 .9 3 ) 10 ( 0 .3 9 ) 1.5 (0.06) DIA. 4 6 ( 1 .8 1 ) 1 57 (6.1 8) C.S. 16mm (.025 s.i.) 2 (0. FLEXIBLE LEAD RED SILICON RUBBER IN 9 .5 . (0 .3 7) 4.3 (0.17) DIA