Previous Datasheet Index Next Data Sheet DISCRETE POWER DIODES and THYRISTORS DATA BOOK To Order Previous Datasheet Index Next Data Sheet Bulletin I25176/A ST203C..C SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-200AB (A-PUK) All diffused design 370A Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt High surge current capability Low thermal impedance High speed performance Typical Applications Inverters Choppers case style TO-200AB (A-PUK) Induction heating All types of force-commutated converters Major Ratings and Characteristics Parameters ST203C..C Units 370 A 55 °C 700 A 25 °C @ 50Hz 5260 A @ 60Hz 5510 A @ 50Hz 138 KA2s @ 60Hz 126 KA2s 1000 to 1200 V 20 to 30 µs - 40 to 125 °C IT(AV) @ Ths IT(RMS) @ Ths ITSM I 2t V DRM /V RRM tq range TJ To Order Previous Datasheet ST203C..C Series Index Next Data Sheet ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V DRM /V RRM , maximum VRSM , maximum I DRM /I RRM max. Code repetitive peak voltage non-repetitive peak voltage @ TJ = TJ max. V V mA 10 1000 1100 12 1200 1300 Type number ST203C..C 40 Current Carrying Capability ITM Frequency ITM ITM 180oel 180oel Units 100µs 50Hz 400Hz 860 840 750 706 1340 1400 1160 1220 5620 2940 5020 2590 1000Hz 700 580 1350 1170 1750 1520 2500Hz 430 340 980 830 910 780 Recovery voltage Vr Voltage before turn-on Vd 50 50 50 50 50 Rise of on-state current di/dt 50 50 - - - - A/µs Heatsink temperature 40 55 40 55 40 55 °C Equivalent values for RC circuit 47Ω / 0.22µF V DRM V DRM 50 V DRM 47Ω / 0.22µF A V 47Ω / 0.22µF On-state Conduction Parameter I T(AV) Max. average on-state current @ Heatsink temperature ST203C..C Units Conditions 370 (140) A 180° conduction, half sine wave 55 (85) °C double side (single side) cooled I T(RMS) Max. RMS on-state current 700 DC @ 25°C heatsink temperature double side cooled I TSM Max. peak, one half cycle, 5260 t = 10ms No voltage non-repetitive surge current 5510 t = 8.3ms reapplied 4420 t = 10ms 100% VRRM 4630 t = 8.3ms reapplied Sinusoidal half wave, 138 t = 10ms No voltage Initial TJ = TJ max t = 8.3ms reapplied t = 10ms 100% VRRM t = 8.3ms reapplied I2t Maximum I2t for fusing A 126 98 KA2s 89 I 2 √t Maximum I2√t for fusing 1380 KA2√s To Order t = 0.1 to 10ms, no voltage reapplied Previous Datasheet ST203C..C Series Index Next Data Sheet Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics Fig. 5 - On-state Power Loss Characteristics Fig. 6 - On-state Power Loss Characteristics Fig. 7 - Maximum Non-repetitive Surge Current To Order Fig. 8 - Maximum Non-repetitive Surge Current Previous Datasheet Index Fig. 9 - On-state Voltage Drop Characteristics Fig. 11 - Reverse Recovered Charge Characteristics Next Data Sheet Series ST203C..C Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Fig. 12 - Reverse Recovery Current Characteristics Fig. 13 - Frequency Characteristics To Order Previous Datasheet ST203C..C Series Index Next Data Sheet Fig. 14 - Frequency Characteristics Fig. 15 - Frequency Characteristics Fig. 16 - Maximum On-state Energy Power Loss Characteristics To Order Previous Datasheet Index Fig. 17 - Gate Characteristics To Order Next Data Sheet Series ST203C..C Previous Datasheet Index Next ST203C..C Data SheetSeries On-state Conduction Parameter V TM Max. peak on-state voltage V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage rt1 ST203C..C Units 1.72 1.17 ITM= 600A, TJ = TJ max, tp = 10ms sine wave pulse V Low level value of forward 0.92 rt2 High level value of forward slope resistance 0.83 IH Maximum holding current 600 IL Typical latching current 1000 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x IT(AV)), TJ = TJ max. 1.22 slope resistance Conditions mΩ (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x IT(AV)), TJ = TJ max. mA T J = 25°C, I T > 30A T J = 25°C, V A= 12V, Ra = 6Ω, I G= 1A Switching Parameter di/dt Max. non-repetitive rate of rise of turned-on current td tq ST203C..C Units 1000 Typical delay time Max. turn-off time A/µs 0.8 Min 20 Max 30 µs Conditions TJ = TJ max., VDRM = rated VDRM ITM = 2 x di/dt TJ= 25°C, VDM = rated VDRM, ITM = 50A DC, tp= 1µs Resistive load, Gate pulse: 10V, 5Ω source TJ = TJ max, ITM = 300A, commutating di/dt = 20A/µs VR = 50V, tp = 500µs, dv/dt: see table in device code Blocking Parameter ST203C..C Units dv/dt Maximum critical rate of rise of off-state voltage 500 V/µs IRRM IDRM Max. peak reverse and off-state leakage current 40 mA Conditions TJ = TJ max. linear to 80% VDRM, higher value available on request TJ = TJ max, rated V DRM/V RRM applied Triggering Parameter PGM Maximum peak gate power ST203C..C Units 60 PG(AV) Maximum average gate power 10 IGM Max. peak positive gate current 10 +VGM Maximum peak positive gate voltage 20 -VGM Maximum peak negative gate voltage IGT Max. DC gate current required to trigger VGT Max. DC gate voltage required to trigger Conditions W TJ = TJ max, f = 50Hz, d% = 50 A TJ = TJ max, tp ≤ 5ms V TJ = TJ max, tp ≤ 5ms 5 200 mA TJ = 25°C, VA = 12V, Ra = 6Ω 3 V IGD Max. DC gate current not to trigger 20 mA VGD Max. DC gate voltage not to trigger 0.25 V TJ = TJ max., rated VDRM applied To Order Previous Datasheet Index ST203C..C Series Next Data Sheet Thermal and Mechanical Specification Parameter ST203C..C TJ Max. operating temperature range -40 to 125 Tstg Max. storage temperature range -40 to 150 RthJ-hs Max. thermal resistance, DC operation single side cooled K/W 0.08 RthC-hs Max. thermal resistance, wt °C 0.17 junction to heatsink F Units Conditions 0.033 K/W case to heatsink 0.017 Mounting force, ± 10% 4900 N (500) (Kg) 50 g Approximate weight Case style TO - 200AB (A-PUK) DC operation double side cooled DC operation single side cooled DC operation double side cooled See Outline Table ∆RthJ-hs Conduction (The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Single Side Double Side Units Conditions K/W TJ = TJ max. Single Side Double Side 180° 0.015 0.017 0.011 0.011 120° 0.018 0.019 0.019 0.019 90° 0.024 0.024 0.026 0.026 60° 0.035 0.035 0.036 0.037 30° 0.060 0.060 0.060 0.061 Ordering Information Table Device Code ST 20 3 C 12 C H H 1 1 2 3 4 5 6 7 8 9 10 1 - Thyristor 2 - Essential part number 3 - 3 = Fast turn off 4 - C = Ceramic Puk 5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - C = Puk Case TO-200AB (A-PUK) 7 - Reapplied dv/dt code (for tq test condition) 8 - tq code 9 - 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads) 1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads) 2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads) dv/dt - tq combinations available dv/dt (V/µs) 20 20 CK tq (µs) 25 CJ 30 CH 50 DK DJ DH 100 EK EJ EH *Standard part number. All other types available only on request. 3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads) 10 - Critical dv/dt: None = 500V/µsec (Standard value) L = 1000V/µsec (Special selection) 200 -FJ * FH To Order 400 --HH Previous Datasheet Index Next ST203C..C Data SheetSeries Outline Table ANODE TO GATE CREEPAGE DISTANCE: 7.62 (0.30) MIN. STRIKE DISTANCE: 7.12 (0.28) MIN. 19 (0.75) 0.3 (0.01) MIN. DIA. MAX. 13.7 / 14.4 (0.54 / 0.57) 0.3 (0.01) MIN. 19 (0.75) GATE TERM. FOR 1.47 (0.06) DIA. PIN RECEPTACLE DIA. MAX. 38 (1.50) DIA MAX. Case Style TO-200AB (A-PUK) All dimensions in millimeters (inches) 2 HOLES 3.56 (0.14) x 1.83 (0.07) MIN. DEEP 6.5 (0.26) 4.75 (0.19) 25°± 5° 42 (1.65) MAX. 28 (1.10) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics To Order