Previous Datasheet Index Next Data Sheet DISCRETE POWER DIODES and THYRISTORS DATA BOOK To Order Previous Datasheet Index Next Data Sheet Bulletin I25172/A ST303C..C SERIES INVERTER GRADE THYRISTORS Puk Version Features Metal case with ceramic insulator International standard case TO-200AB (E-PUK) All diffused design 620A Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt High surge current capability Low thermal impedance High speed performance Typical Applications Inverters Choppers Induction heating case style TO-200AB (E-PUK) All types of force-commutated converters Major Ratings and Characteristics Parameters ST303C..C Units 620 A 55 °C 1180 A 25 °C @ 50Hz 7950 A @ 60Hz 8320 A @ 50Hz 316 KA2s @ 60Hz 289 KA2s V DRM /V RRM 400 to 1200 V tq range (*) 10 to 30 µs - 40 to 125 °C IT(AV) @ Ths IT(RMS) @ Ths ITSM I 2t TJ (*) tq = 10 to 20µs for 400 to 800V devices tq = 15 to 30µs for 1000 to 1200V devices To Order Previous Datasheet ST303C..C Series Index Next Data Sheet ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V DRM /V RRM , maximum VRSM , maximum I DRM /I RRM max. Code repetitive peak voltage non-repetitive peak voltage @ TJ = TJ max. V V mA 04 400 500 08 800 900 10 1000 1100 12 1200 1300 Type number ST303C..C 50 Current Carrying Capability ITM Frequency ITM ITM 180oel 180oel Units 100µs 50Hz 400Hz 1314 1260 1130 1040 2070 2190 1940 1880 6930 3440 6270 2960 1000Hz 900 700 1900 1590 1850 1540 2500Hz 340 230 910 710 740 560 Recovery voltage Vr Voltage before turn-on Vd 50 50 50 50 50 Rise of on-state current di/dt 50 50 - - - - A/µs Heatsink temperature 40 55 40 55 40 55 °C Equivalent values for RC circuit 10Ω / 0.47µF V DRM V DRM A 50 V V DRM 10Ω / 0.47µF 10Ω / 0.47µF On-state Conduction Parameter I T(AV) ST303C..C Max. average on-state current @ Heatsink temperature Units Conditions 620 (230) A 180° conduction, half sine wave 55 (85) °C double side (single side) cooled I T(RMS) Max. RMS on-state current 1180 DC @ 25°C heatsink temperature double side cooled I TSM Max. peak, one half cycle, 7950 t = 10ms No voltage non-repetitive surge current 8320 t = 8.3ms reapplied 6690 t = 10ms 100% VRRM 7000 t = 8.3ms reapplied Sinusoidal half wave, 316 t = 10ms No voltage Initial TJ = TJ max t = 8.3ms reapplied t = 10ms 100% VRRM t = 8.3ms reapplied 2 I t 2 Maximum I t for fusing A 289 KA2s 224 204 I √t 2 Maximum I √t for fusing 2 3160 KA √s 2 To Order t = 0.1 to 10ms, no voltage reapplied Previous Datasheet ST303C..C Series Index Next Data Sheet Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics Fig. 5 - On-state Power Loss Characteristics Fig. 6 - On-state Power Loss Characteristics Fig. 7 - Maximum Non-repetitive Surge Current To Order Fig. 8 - Maximum Non-repetitive Surge Current Previous Datasheet Index Fig. 9 - On-state Voltage Drop Characteristics Fig. 11 - Reverse Recovered Charge Characteristics Next ST303C..C Data SheetSeries Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Fig. 12 - Reverse Recovery Current Characteristics Fig. 13 - Frequency Characteristics To Order Previous Datasheet ST303C..C Series Index Next Data Sheet Fig. 14 - Frequency Characteristics Fig. 15 - Frequency Characteristics Fig. 16 - Maximum On-state Energy Power Loss Characteristics To Order Previous Datasheet Index Next ST303C..C Data SheetSeries 10 Re c ta n g u la r g a te p u lse a ) Re c o m m e n d e d lo a d lin e fo r ra t e d d i/ d t : 2 0 V , 1 0 o h m s; tr< = 1 µ s b ) Re c o m m e n d e d lo a d lin e fo r < = 3 0 % ra t e d d i/ d t : 10 V , 1 0 o h m s t r< = 1 µ s (1) (2) (3) (4) PG PG PG PG M M M M = = = = 10W , 20W , 4 0W , 60W , tp tp tp tp = = = = 20m s 10m s 5m s 3 .3 m s (a ) (b ) Tj= -40 °C 1 Tj= 25 °C Tj= 125 °C In st a n t a n e o u s G a t e V o lt a g e ( V ) 10 0 (1) (2) (3 ) (4 ) VGD IG D 0.1 0.001 D e v ic e : ST30 3 C ..C Se rie s Fre q u e n c y Lim it e d b y PG ( A V ) 0.01 0.1 1 In st a n t a n e o u s G a te C u rre n t ( A ) Fig. 17 - Gate Characteristics To Order 10 100 Previous Datasheet Index Next ST303C..C Data Sheet Series On-state Conduction Parameter V TM Max. peak on-state voltage V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage rt1 Low level value of forward slope resistance ST303C..C Units 2.16 1.44 Conditions ITM= 1255A, TJ = TJ max, tp = 10ms sine wave pulse V (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 1.48 (I > π x IT(AV)), TJ = TJ max. 0.57 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. mΩ rt2 High level value of forward slope resistance 0.56 IH Maximum holding current 600 IL Typical latching current 1000 (I > π x IT(AV)), TJ = TJ max. mA T J = 25°C, I T > 30A T J = 25°C, V A= 12V, Ra = 6Ω, I G= 1A Switching Parameter di/dt Max. non-repetitive rate of rise of turned-on current td tq Typical delay time Max. turn-off time (*) ST303C..C Units 1000 A/µs 0.83 Min 10 Max 30 µs Conditions TJ = TJ max, VDRM = rated VDRM ITM = 2 x di/dt TJ= 25°C, VDM = rated VDRM, ITM = 50A DC, tp= 1µs Resistive load, Gate pulse: 10V, 5Ω source TJ = TJ max, ITM = 550A, commutating di/dt = 40A/µs VR = 50V, tp = 500µs, dv/dt: see table in device code (*) tq = 10 to 20µs for 400 to 800V devices; tq = 15 to 30µs for 1000 to 1200V devices. Blocking Parameter ST303C..C Units dv/dt Maximum critical rate of rise of off-state voltage 500 V/µs IRRM IDRM Max. peak reverse and off-state leakage current 50 mA Conditions TJ = TJ max. linear to 80% VDRM, higher value available on request TJ = TJ max, rated V DRM/V RRM applied Triggering Parameter PGM Maximum peak gate power ST303C..C Units 60 PG(AV) Maximum average gate power 10 IGM Max. peak positive gate current 10 +VGM Maximum peak positive gate voltage 20 -VGM Maximum peak negative gate voltage IGT Max. DC gate current required to trigger VGT Max. DC gate voltage required to trigger Conditions W TJ = TJ max, f = 50Hz, d% = 50 A TJ = TJ max, tp ≤ 5ms V TJ = TJ max, tp ≤ 5ms 5 200 mA TJ = 25°C, VA = 12V, Ra = 6Ω 3 V IGD Max. DC gate current not to trigger 20 mA VGD Max. DC gate voltage not to trigger 0.25 V TJ = TJ max, rated VDRM applied To Order Previous Datasheet Index ST303C..C Series Next Data Sheet Thermal and Mechanical Specification Parameter ST303C..C TJ Max. operating temperature range -40 to 125 Tstg Max. storage temperature range -40 to 150 RthJ-hs Max. thermal resistance, DC operation single side cooled K/W 0.04 RthC-hs Max. thermal resistance, wt °C 0.09 junction to heatsink F Units Conditions 0.020 K/W case to heatsink 0.010 Mounting force, ± 10% 9800 N (1000) (Kg) 83 g Approximate weight Case style TO - 200AB (E-PUK) DC operation double side cooled DC operation single side cooled DC operation double side cooled See Outline Table ∆RthJ-hs Conduction (The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Single Side Double Side Units Conditions K/W TJ = TJ max. Single Side Double Side 180° 0.010 0.010 0.007 0.007 120° 0.012 0.012 0.012 0.013 90° 0.015 0.015 0.016 0.017 60° 0.022 0.022 0.023 0.023 30° 0.036 0.036 0.036 0.037 Ordering Information Table Device Code ST 30 3 C 12 C H K 1 1 2 3 4 5 6 7 8 9 10 1 - Thyristor 2 - Essential part number 3 - 3 = Fast turn off 4 - C = Ceramic Puk 5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - C = Puk Case TO-200AB (E-PUK) 7 - Reapplied dv/dt code (for tq test condition) 8 - tq code 9 - 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads) 1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads) 2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads) 3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads) 10 - Critical dv/dt: dv/dt - tq combinations available dv/dt (V/µs) 20 tq (µs) 10 CN 12 CM up to 800V 15 CL 20 CK 50 DN DM DL DK 100 EN EM EL EK 200 FN * FM FL * FK * tq (µs) -DP DK DJ DH --EK EJ EH ----FK * HK FJ * HJ FH HH 15 18 20 only for 25 1000/1200V 30 CL CP CK CJ -- None = 500V/µsec (Standard value) *Standard part number. L All other types available only on request. = 1000V/µsec (Special selection) 400 HN HM HL HK To Order Previous Datasheet Index NextST303C..C Data SheetSeries Outline Table ANODE TO GATE CREEPAGE DISTANCE: 11.18 (0.44) MIN. STRIKE DISTANCE: 7.62 (0.30) MIN. 25.3 (0.99) 0.3 (0.01) MIN. DIA. MAX. 14.1 / 15.1 (0.56 / 0.59) 0.3 (0.01) MIN. 25.3 (0.99) GATE TERM. FOR 1.47 (0.06) DIA. PIN RECEPTACLE DIA. MAX. 40.5 (1.59) DIA. MAX. Case Style TO-200AB (E-PUK) All dimensions in millimeters (inches) 2 HOLES 3.56 (0.14) x 1.83 (0.07) MIN. DEEP 6.5 (0.26) 4.75 (0.19) 25°± 5° 42 (1.65) MAX. 28 (1.10) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics To Order