Si4835DY P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. • • Extended VGSS range (±25V) for battery applications. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. • Low gate charge (19nC typical). • Fast switching speed. • High performance trench technology for extremely low RDS(ON). • High power and current handling capability. Applications • • • Battery protection Load switch Motor drives D D -8.8 A, -30 V. RDS(ON) = 0.020 Ω @ VGS = -10 V RDS(ON) = 0.035 Ω @ VGS = -4.5 V D D SO-8 S S S 6 3 7 2 8 1 TA = 25°C unless otherwise noted Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current PD Power Dissipation for Single Operation - Continuous (Note 1a) - Pulsed Ratings Units -30 V ±25 V -8.8 A -50 (Note 1a) 2.5 (Note 1b) 1.2 (Note 1c) T J, T stg 4 G Absolute Maximum Ratings Symbol 5 W 1 -55 to +150 °C (Note 1a) 50 °C/W (Note 1) 25 °C/W Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Outlines and Ordering Information Device Marking Si4835DY 2001 Fairchild Semiconductor International Device 4835 Reel Size Tape Width Quantity 13’’ 12mm 2500 units Si4835DY Rev. A Si4835DY January 2001 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = -250 µA,Referenced to 25°C VDS = -24 V, VGS = 0 V -1 µA IGSSF Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V -100 nA On Characteristics -30 V -24 mV/°C (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID = -250 µA,Referenced to 25°C 5 0.015 0.023 0.026 ID(on) On-State Drain Current VGS = -10 V, ID = -8.8 A VGS = -10 V, ID = -8.8 A,TJ=125°C VGS = -4.5 V, ID = -6.7 A VGS = -10 V, VDS = -5 V gFS Forward Transconductance VDS = -10 V, ID = -8.8 A 20 S VDS = -15 V, VGS = 0 V, f = 1.0 MHz 1680 pF 545 pF 220 pF -1 -2 -3 V mV/°C 0.020 0.032 0.035 -25 Ω A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge (Note 2) VDD = -15 V, ID = -1 A, VGS = -10 V, RGEN = 6 Ω VDS = -10 V, ID = -8.8 A, VGS = -5 V, 12 22 ns 15 27 ns 55 90 ns 23 37 ns 19 27 nC 6.8 nC 7.2 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -2.1 A (Note 2) -0.52 -2.1 A -1.2 V Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design. a) 50° C/W when mounted on a 1 in2 pad of 2 oz. copper. b) 105° C/W when mounted on a 0.04 in2 pad of 2 oz. copper. c) 125° C/W on a minimum mounting pad of 2 oz. copper. Scale 1 : 1 on letter size paper 2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Si4835Dy Rev. A Si4835DY Electrical Characteristics Si4835DY Typical Characteristics 2.6 50 -6.0V -5.0V -7.0V 40 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) VGS = -10V -4.5V 30 -4.0V 20 10 -3.5V 0 2.4 VGS = -4.0V 2.2 2 -4.5V 1.8 -5.0V 1.6 1.4 -6.0V -7.0V 1.2 -10V 0.8 0 1 2 3 4 5 0 10 20 -VDS, DRAIN-SOURCE VOLTAGE (V) 40 50 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 0.06 1.6 ID = -8.8A VGS = -10V RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 30 -ID, DIRAIN CURRENT (A) Figure 1. On-Region Characteristics 1.4 1.2 1 0.8 ID = -4.4A 0.05 0.04 0.03 o TA = 125 C 0.02 o TA = 25 C 0.01 0 0.6 -50 -25 0 25 50 75 100 125 3 150 4 5 6 7 8 9 10 -VGS, GATE TO SOURCE VOLTAGE (V) o TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature Figure 4. On-Resistance Variation with Gate-to-Source Voltage 50 100 TA = -55oC 25oC -IS, REVERSE DRAIN CURRENT (A) VDS = -5V -ID, DRAIN CURRENT (A) -8.0V 1 125oC 40 30 20 10 VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 1 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics 6 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature Si4835DY Rev. A ID = -8.8A f = 1 MHz VGS = 0 V VDS = -5V -10V 8 2000 -15V CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) (continued) 2500 10 6 4 CISS 1500 1000 COSS 500 2 CRSS 0 0 0 5 10 15 20 25 30 35 0 5 Qg, GATE CHARGE (nC) 10 15 20 25 30 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance Characteristics Figure 7. Gate-Charge Characteristics 100 50 RDS(ON) LIMIT SINGLE PULSE 100µs 10 o RθJA = 125 C/W 40 1ms o TA = 25 C POWER (W) 10ms 100ms 1s 10s 1 DC VGS = -10V SINGLE PULSE o RθJA = 125 C/W 0.1 30 20 10 o TA = 25 C 0 0.01 0.1 1 10 0.001 100 0.01 -VDS, DRAIN-SOURCE VOLTAGE (V) r(t), NORM ALIZED EFFECTIVE 0.1 1 10 100 1000 SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area TR ANSI ENT TH ER MAL RESISTANC E -ID, DRAIN CURRENT (A) Si4835DY Typical Characteristics Figure 10. Single Pulse Maximum Power Dissipation 1 0.5 0.2 0.1 0.05 D = 0.5 R θJ A (t) = r(t) * R θJ A R θJ A= 125°C /W 0.2 0.1 00 .5 P(pk ) 0.0 2 0.02 t1 0.01 0.01 S i n g le P ul s e t2 TJ - TA = P * RθJA ( )t 0.0 05 D u t y C y c l e, D = t 1 /t2 0.0 02 0.0 01 0.0001 0.0 01 0.01 0.1 1 10 100 300 t 1, TI M E (s e c ) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design. Si4835DY Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G