FDS6670A Single N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. • 13 A, 30 V. RDS(ON) = 8 mΩ @ VGS = 10 V RDS(ON) = 10 mΩ @ VGS = 4.5 V • Fast switching speed • Low gate charge These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. • High performance trench technology for extremely low RDS(ON) • High power and current handling capability DD DD DD DD G SS G S SS S SO-8 Pin 1 SO-8 Absolute Maximum Ratings Symbol Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current – Continuous (Note 1a) – Pulsed TJ, TSTG 6 3 7 2 8 1 Ratings Units 30 V ±20 V 13 A 50 Power Dissipation for Single Operation PD 4 TA=25oC unless otherwise noted Parameter VDSS 5 (Note 1a) 2.5 (Note 1b) 1.0 Operating and Storage Junction Temperature Range W –55 to +150 °C °C/W Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 125 RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6670A FDS6670A 13’’ 12mm 2500 units 2003 Fairchild Semiconductor Corporation FDS6670A Rev F (W) FDS6670A June 2003 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics ID = 250 µA BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 µA, Referenced to 25°C VDS = 24 V, 30 V 26 VGS = 0 V VDS = 24 V, VGS = 0 V, TJ=55°C IGSS Gate–Body Leakage On Characteristics VGS = ±20 V, VDS = 0 V ID = 250 µA mV/°C 1 µA 10 µA ±100 nA 3 V (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = 250 µA, Referenced to 25°C 1 1.8 –5.3 VGS = 10 V, ID = 13 A VGS = 4.5 V, ID = 10.5 A VGS= 10 V, ID = 13 A, TJ=125°C 6 7.2 8.5 ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V gFS Forward Transconductance VDS = 15 V, ID = 13 A VDS = 15 V, f = 1.0 MHz V GS = 0 V, mV/°C 8 10 14 50 mΩ A 55 S 2220 pF 535 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge 200 pF VGS = 15 mV, f = 1.0 MHz 1.7 Ω VDD = 10 V, VGS = 10 V, 11 19 ns 13 24 ns 40 64 ns 13 24 ns 21 30 nC (Note 2) VDS = 15 V, VGS = 5 V ID = 1 A, RGEN = 6 Ω ID = 13 A, 6 nC 7 nC Drain–Source Diode Characteristics and Maximum Ratings IS VSD trr Qrr Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = 2.1 A (Note 2) Voltage Diode Reverse Recovery Time IF = 13 A, diF/dt = 100 A/µs Diode Reverse Recovery Charge 0.7 2.1 A 1.2 V 31 nS 21 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°C/W when mounted on a 1in2 pad of 2 oz copper b) 125°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2 Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDS6670A Rev F (W) FDS6670A Electrical Characteristics FDS6670A Typical Characteristics 1.8 50 VGS = 10V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3.5V ID, DRAIN CURRENT (A) 40 4.5V 4.0V 30 20 3.0V 10 0 0.5 1 VDS, DRAIN-SOURCE VOLTAGE (V) 1.4 4.0V 1.2 4.5V 5.0V 1 10V 1.5 0 Figure 1. On-Region Characteristics. 10 20 30 ID, DRAIN CURRENT (A) 40 50 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.025 1.6 RDS(ON), ON-RESISTANCE (OHM) ID = 13A VGS = 10V 1.4 1.2 1 0.8 0.6 ID = 6.5A 0.02 0.015 TA = 125oC 0.01 TA = 25oC 0.005 -50 -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (oC) 125 150 2 Figure 3. On-Resistance Variation with Temperature. 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 50 100 VGS = 0V VDS = 5V IS, REVERSE DRAIN CURRENT (A) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 3.5V 0.8 0 40 ID, DRAIN CURRENT (A) 1.6 30 TA =125oC 20 25oC -55oC 10 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 2 2.25 2.5 2.75 3 3.25 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3.5 0 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6670A Rev F (W) 3000 f = 1MHz VGS = 0 V ID = 13A 2500 8 Ciss VDS = 10V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 15V 6 20V 4 2 2000 1500 1000 Coss 500 Crss 0 0 0 10 20 30 Qg, GATE CHARGE (nC) 40 0 50 Figure 7. Gate Charge Characteristics. 30 80 P(pk), PEAK TRANSIENT POWER (W) 100µs RDS(ON) LIMIT 1m 10ms 10 10s 1 100ms 1s DC VGS = 10V SINGLE PULSE RθJA = 125oC/W TA = 25oC 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 SINGLE PULSE RθJA = 125°C/W TA = 25°C 60 40 20 0 0.001 Figure 9. Maximum Safe Operating Area. 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 10. Single Pulse Maximum Power Dissipation. 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE ID, DRAIN CURRENT (A) 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance Characteristics. 100 0.1 5 D = 0.5 R θJA (t) = r(t) * R θJA R θJA = 125 °C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 T J - T A = P * R θJA (t) Duty Cycle, D = t 1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS6670A Rev F (W) FDS6670A Typical Characteristics TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOSTM I2C™ TM EnSigna ImpliedDisconnect™ FACT™ ISOPLANAR™ Across the board. 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As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I5