Philips Semiconductors Product specification Low-power FDDI transimpedance amplifier DESCRIPTION SA5222 PIN DESCRIPTION The NE/SA5222 is a low-power, wide-band, low noise transimpedance amplifier with differential outputs, optimized for signal recovery in FDDI fiber optic receivers. The part is also suited for many other RF and fiber optic applications as a general purpose gain block. D Package VCC1 1 8 VCC2 GND1 2 7 OUT IN 3 6 OUT GND1 4 5 GND2 FEATURES Extremely low noise: 2.0pA Hz • • Single 5V supply • Low supply current: 9mA • Large bandwidth: 165MHz • Differential outputs • Low output offset • Low input/output impedances • High power-supply-rejection ratio: 55dB • Tight transresistance control • High input overload: 115µA • ESD protected SD00360 Figure 1. Pin Configuration APPLICATIONS • FDDI preamp • Current-to-voltage converters • Wide-band gain block • Medical and scientific instrumentation • Sensor preamplifiers • Single-ended to differential conversion • Low noise RF amplifiers • RF signal processing ORDERING INFORMATION DESCRIPTION 8-Pin Plastic Small Outline (SO) package TEMPERATURE RANGE ORDER CODE DWG # -40 to +85°C SA5222D SOT96-1 ABSOLUTE MAXIMUM RATINGS SYMBOL VCC1,2 PARAMETER RATING UNITS 6 V °C °C °C Power supply voltage TA Ambient temperature range -40 to +85 TJ Junction temperature range -55 to +150 TSTG Storage temperature range -65 to +150 PD IINMAX Power dissipation TA = 25oC (still air)1 0.78 W 5 mA Maximum input current NOTE: 1. Maximum power dissipation is determined by the operating ambient temperature and the thermal resistance θJA = 158oC/W. Derate 6.2mW/°C above 25°C. RECOMMENDED OPERATING CONDITIONS SYMBOL RATING UNITS Power supply voltage 4.5 to 5.5 V TA Ambient temperature range: SA grade -40 to +85 TJ Junction temperature range: SA grade -40 to +105 VCC1,2 1995 Apr 26 PARAMETER 1 °C °C 853-1582 15170 Philips Semiconductors Product specification Low-power FDDI transimpedance amplifier SA5222 DC ELECTRICAL CHARACTERISTICS Typical data and Min and Max limits apply at TA = 25°C, and VCC1 = VCC2 = +5V, unless otherwise specified. SYMBOL PARAMETER TEST CONDITIONS SA5222 Min Typ Max 1.8 UNIT VIN Input bias voltage 1.3 1.55 2.9 3.2 3.5 V 0 ±100 mV 12 mA VO± Output bias voltage VOS Output offset voltage ICC Supply current V 6 9 1.5 2 mA Test circuit 5, Procedure 2 ±60 ±90 µA Maximum input current overload threshold Test circuit 5, Procedure 4 ±80 ±115 µA Maximum differential output voltage swing RL = ∞, Test Circuit 5, Procedure 3 3.6 VP-P IOMAX Output sink/source current IIN Input current (2% linearity) IINMAX VOMAX AC ELECTRICAL CHARACTERISTICS Typical data and Min and Max limits apply at TA = 25°C and VCC1 = VCC2 =+5V, unless otherwise specified. SYMBOL PARAMETER TEST CONDITIONS SA5222 UNIT Min Typ Max DC tested, RL = ∞, Test Circuit 5, Procedure 1 13.3 16.6 19.9 kΩ DC tested 30 60 90 Ω RT Transresistance (differential output) RO Output resistance (differential output) RT Transresistance (single-ended output) DC tested, RL = ∞ 6.65 8.3 9.95 kΩ RO Output resistance (single-ended output) DC tested 15 30 45 Ω f3dB Bandwidth (-3dB)1 Test Circuit 1 110 140 MHz RIN Input resistance 150 Ω CIN ∆R/∆V ∆R/∆T IIN Input capacitance2 Transresistance power supply sensitivity Transresistance ambient temperature sensitivity RMS noise current spectral density (referred to input) 1 pF VCC1 = VCC2 = 5 ±0.5V 1.0 %/V ∆TA = TA MAX - TA MIN 0.07 %/oC Test Circuit 2, f = 10MHz 2.0 pA Hz Test circuit 2, ∆f = 50MHz 15 Integrated RMS noise current over the bandwidth (referred to input) CS = 0pF IT CS = 1pF 36 ∆f = 50MHz 17 ∆f = 100MHz 35 ∆f = 150MHz 55 nA –55 –34 dB dB Test circuit 4 ±120 µA Rise and fall times 10 – 90% 2.2 ns Group delay f = 10MHz 2.2 ns Power supply rejection ratio Power supply rejection ratio3 IINMAX Maximum input amplitude for output duty cycle of 50 ±5%4 tD 25 ∆f = 150MHz DC Tested, ∆VCC = ±0.5V f = 1.0MHz, Test Circuit 3 PSRR PSRR tr, tf ∆f = 100MHz NOTES: 1. Bandwidth is tested into 50Ω load. Bandwidth into 1kΩ load is approximately 165MHz. 2. Does not include Miller-multiplied capacitance of input device. 3. PSRR is output referenced and is circuit board layout dependent at higher frequencies. For best performance use a RF filter in VCC line. 4. Monitored in production via linearity and over load tests. 1995 Apr 26 2 Philips Semiconductors Product specification Low-power FDDI transimpedance amplifier SA5222 TEST CIRCUITS SINGLE-ENDED DIFFERENTIAL V R T + V OUT R + V IN RO = ZO 2 @ S 21 @ R 1 + S22 R OUT R + V IN + T 1 + S22 -20 RO = 2ZO 1 - S22 4 @ S 21 @ R SPECTRUM ANALYZER -40 50Ω 1 - S22 NETWORK ANALYZER VCC S-PARAMETER TEST SET PORT1 PORT2 ZO = 50Ω R=1k 50 ZO = 50Ω VCC 0.1uF .1uF 20 OUT IN DUT OUT GND1 OUT IN DUT OUT CS 20 .1µF 20 .1µF 10µF NE5209 10µF GND2 GND1 50Ω .1uF 20 GND2 50 Test Circuit 1: Bandwidth Test Circuit 2: Noise SD00361 Figure 2. Test Circuit1 SD00362 Figure 3. Test Circuit2 TEST CIRCUITS (continued) 5V BIAS TEE NETWORK ANALYZER S-PARAMETER TEST SET PORT1 PORT2 50Ω CAL 0.1uF TRANSFORMER CONVERSION LOSS = 9dB VCC NC GND1 .1uF 20Ω OUT IN DUT 20Ω .1uF OUT GND2 NHO300HB 50Ω UNBAL. 100Ω BAL. Test Circuit 3: PSRR Figure 4. Test Circuit4 1995 Apr 26 3 SD00363 Philips Semiconductors Product specification Low-power FDDI transimpedance amplifier SA5222 TEST CIRCUITS (continued) 5V PULSE GEN 1kΩ OFFSET .1µF OUT 0.1uF IN A DUT OSCILLOSCOPE 1kΩ 1kΩ OUT 50Ω ZO = 50Ω .1µF B GND2 GND1 ZO = 50Ω Meaurement done using differential wave forms Test Circuit 4: Duty Cycle Distortion SD00364 Figure 5. Test Circuit4 TEST CIRCUITS (continued) 5V OUT + + OUT – – VO (VOLTS) IIN (µA) GND1 GND2 Typical VO (Differential) vs IIN 2.25 VO DIFFERENTIAL OUTPUT VOLTAGE (V) 1.80 7 VO 1.35 VO 0.90 5 3 VO1 0.45 VO S 0.00 VO2 –0.45 VO4 –0.90 VO6 –1.35 –1.80 –2.25 –200 VO8 –160 –120 –80 –40 0 40 80 120 160 200 CURRENT INPUT (µA) SA5222 TEST CONDITIONS Procedure 1 RT measured at 30µA RT = (VO1 - VO2) / (+30µA - (-30µA) Where: VO1 Measure at IIN = +30µA VO2 Measured at IIN = -30µA Procedure 2 Linearity = 1 - ABS((VOA - VOB / (VO3 - VO4)) Where: VO3 Measured at IIN = +60µA VO4 Measured at IIN = -60µA VOA = RT x (+60µA) + VOS VOB = RT x (-60µA) + VOS Procedure 3 VOMAX = VO7 - VO8 Where: VO7 Measured at IIN = +130µA VO8 Measured at IIN = -130µA Procedure 4 IINMAX Test Pass Conditions: VO7 - VO5 > 50mV and VO6 - VO8 < 50mV Where: VO5 Measured at IIN = +80µA VO6 Measured at IIN = -80µA VO7 Measured at IIN = +130µA VOB Measured at IIN = -130µA Test Circuit 5: DC Tests Figure 6. Test Circuit5 1995 Apr 26 4 SD00365 Philips Semiconductors Product specification Low-power FDDI transimpedance amplifier SA5222 5 10 9 85°C VOLTAGE (V) SUPPLY CURRENT (mA) OUT 4 25°C –40°C 8 3 OUT 2 7 1 TA = +25°C VCC = 5V 0 6 4.5 5 SUPPLY VOLTAGE (V) 5.5 –200 –100 0 100 INPUT CURRENT (µA) SD00366 200 SD00548 Figure 10. Differential Output Voltages vs. Input Current Figure 7. ICC vs. VCC and Temperature 2.5 1.8 –40°C 1.5 1.6 VOLTAGE (V) INPUT VOLTAGE (V) 1.7 25°C 1.5 85°C 0.5 –0.5 1.4 –1.5 4.5V 1.3 TA = +25°C 5.5V –2.5 1.2 4.5 5 SUPPLY VOLTAGE (V) –200 5.5 SD00546 –100 0 INPUT CURRENT (µA) 100 200 SD00549 Figure 11. Differential Output Voltage vs Input Current and VCC Figure 8. Input Voltage vs. VCC and Temperature 2.5 3.8 3.6 1.5 85°C –40°C 85°C 3.2 VOLTAGE (V) OUTPUT VOLTAGE (V) 3.4 25°C 3 –40°C 2.8 0.5 –0.5 2.6 –1.5 2.4 VCC = 5V 2.2 PIN 6 OUTPUT –2.5 2 4.5 5 SUPPLY VOLTAGE (V) –200 5.5 SD00547 0 100 INPUT CURRENT (µA) 200 SD00550 Figure 12. Diff. Output Voltage vs. Input Current and Temp. Figure 9. Output Voltage vs. VCC and Temperature 1995 Apr 26 –100 5 Philips Semiconductors Product specification Low-power FDDI transimpedance amplifier SA5222 18 15 85°C 17 10 16 –40°C S21 (dB) TRANSRESISTANCE (KOHMS) PIN 6 25°C 15 5 PIN 7 14 0 13 VCC = 5V TA = +25°C ∆Iin = ±20µA 12 –5 4.5 5 SUPPLY VOLTAGE (V) 1 5.5 SD00367 10 100 300 FREQUENCY (MHz) SD00553 Figure 16. Insertion Gain vs. Frequency Figure 13. Differential Transresistance vs. VCC and Temperature 15 50 5.5V 4.5V 10 25°C 30 S21 (dB) OUTPUT RESISTANCE (OHMS) –40°C 40 85°C 5 20 0 PIN 6 OUTPUT 10 TA = +25°C –5 1 10 0 4.5 5 SUPPLY VOLTAGE (V) 100 300 FREQUENCY (MHz) 5.5 SD00554 Figure 17. Insertion Gain vs. Frequency and VCC SD00551 Figure 14. Output Resistance vs. VCC and Temperature 15 50 +85°C 45 85°C 10 –40°C 35 25°C S21 (dB) OUTPUT OFFSET (mV) 40 30 5 25 20 0 15 PIN 6 OUTPUT –40°C 10 VCC = 5V 5 –5 1 0 4.5 5 SUPPLY VOLTAGE (V) 5.5 SD00552 10 100 FREQUENCY (MHz) 300 SD00555 Figure 18. Insertion Gain vs. Frequency and Temperature Figure 15. Output Offset Voltage vs. VCC and Temperature 1995 Apr 26 +85°C 6 Philips Semiconductors Product specification Low-power FDDI transimpedance amplifier SA5222 200 50 PIN 7 OUTPUT 45 VCC = 5V 40 0 PIN 6 OUTPUT 300 PARTS FROM 3 WAFERS 50Ω Load TA = 25°C 35 FREQUENCY S21 PHASE (DEG) 100 30 25 20 15 –100 10 VCC = 5V 5 TA = +25°C 0 –200 1 10 FREQUENCY (MHz) 100 110 300 SD00368 140 BANDWIDTH (MHz) 170 SD00558 Figure 22. –3dB Bandwidth Distribution Figure 19. Phase vs. Frequency 8 DIFFERENTIAL OUTPUT 0.1µF COUPLING CAP’s 7 0 5 PSRR (dB) S21 GROUP DELAY (ns) 6 4 PIN 6 OUTPUT 3 2 –4 0 VCC = 5V TA = +25°C 1 VCC = 5V TA = +25°C –60 0.1 0 1 10 FREQUENCY (MHz) –20 100 300 1 SD00556 10 FREQUENCY (MHz) 100 300 SD00559 Figure 23. Power–Supply Rejection Ratio vs. Frequency Figure 20. Group Delay vs. Frequency 8 115 OUTPUT NOISE DIVIDED BY 10MHz GAIN 7 VCC = 5V TA = +25°C 6 INPUT NOISE (pA/ √ Hz) Z OUT MAGNITUDE (OHMS) 95 75 PIN 6 55 PIN 7 35 15 TA = +25°C 100 2 CS = 0pF 1 300 FREQUENCY (MHz) SD00557 10 FREQUENCY (MHz) 100 300 SD00560 Figure 24. Input Noise Spectral Density vs. Frequency Figure 21. Output Impedance vs. Frequency 1995 Apr 26 3 0 –5 10 CS = 1pF 4 1 VCC = 5V 1 5 7 Philips Semiconductors Product specification Low-power FDDI transimpedance amplifier SA5222 VCC2 VCC1 1 8 GND 1 2 7 IN 3 6 OUT GND 1 4 5 GND 2 OUT SD00505 Figure 25. SA5222 Bonding Diagram carriers, it is impossible to guarantee 100% functionality through this process. There is no post waffle pack testing performed on individual die. Die Sales Disclaimer Due to the limitations in testing high frequency and other parameters at the die level, and the fact that die electrical characteristics may shift after packaging, die electrical parameters are not specified and die are not guaranteed to meet electrical characteristics (including temperature range) as noted in this data sheet which is intended only to specify electrical characteristics for a packaged device. Since Philips Semiconductors has no control of third party procedures in the handling or packaging of die, Philips Semiconductors assumes no liability for device functionality or performance of the die or systems on any die sales. All die are 100% functional with various parametrics tested at the wafer level, at room temperature only (25°C), and are guaranteed to be 100% functional as a result of electrical testing to the point of wafer sawing only. Although the most modern processes are utilized for wafer sawing and die pick and place into waffle pack 1995 Apr 26 Although Philips Semiconductors typically realizes a yield of 85% after assembling die into their respective packages, with care customers should achieve a similar yield. However, for the reasons stated above, Philips Semiconductors cannot guarantee this or any other yield on any die sales. 8