PHILIPS SA5223

INTEGRATED CIRCUITS
SA5223
Wide dynamic range AGC
transimpedance amplifier (150MHz)
Product specification
IC19 Data Handbook
Philips
Semiconductors
1995 Oct 24
Philips Semiconductors
Product specification
Wide dynamic range AGC transimpedance amplifier(150MHz)
DESCRIPTION
SA5223
PIN DESCRIPTION
The SA5223 is a wide-band, low-noise transimpedance amplifier
with differential outputs, incorporating AGC and optimized for signal
recovery in wide-dynamic-range fiber optic receivers, such as
SONET. The part is also suited for many other RF and fiber optic
applications as a general purpose gain block.
D Package
The SA5223 is the first AGC amplifier to incorporate internal AGC
loop hold capacitor, therefore, no external components are required.
The internal AGC loop enables the SA5223 to effortlessly handle
bursty data over a range of nA to mA of signal current, positive
direction (sinking) only.
GND3
1
8
VCC
GND1
2
7
OUT
IN
3
6
OUT
GND4
4
5
GND2
SD00369
FEATURES
• Extremely low noise: 1.17pAń ǸHz
• Single 5V supply
• Low supply current: 22mA
• Large bandwidth: 150MHz
• Differential outputs
• Internal hold capacitor
• Low input/output impedances
• High power-supply-rejection ratio: 55dB
• Tight transresistance control
• High input overload: 4mA
• 2000V HBM ESD protection
APPLICATIONS
• OC3 SONET preamp (see AN1431 for detailed analysis
• Current-to-voltage converters
• Wide-band gain block
• Medical and scientific instrumentation
• Sensor preamplifiers
• Single-ended to differential conversion
• Low noise RF amplifiers
• RF signal processing
ORDERING INFORMATION
DESCRIPTION
8-Pin Plastic Small Outline
TEMPERATURE RANGE
ORDER CODE
DWG #
-40 to +85°C
SA5223D
SOT96-1
For unpackaged die please contact factory.
ABSOLUTE MAXIMUM RATINGS
SYMBOL
VCC
PARAMETER
RATING
UNITS
6
V
Power supply voltage
TA
Ambient temperature range
-40 to +85
TJ
Junction temperature range
-55 to +150
TSTG
Storage temperature range
-65 to +150
°C
°C
°C
0.78
W
5
mA
PD
IINMAX
Power dissipation TA = 25oC (still air)1
Maximum input current
NOTE:
1. Maximum power dissipation is determined by the operating ambient temperature and the thermal resistance θJA = 158oC/W. Derate
6.2mW/°C above 25°C.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
VCC
PARAMETER
RATING
Power supply voltage
4.5 to 5.5
TA
Ambient temperature range: SA grade
-40 to +85
TJ
Junction temperature range: SA grade
-40 to +105
1995 Oct 24
2
UNITS
V
°C
°C
853-1816 15939
Philips Semiconductors
Product specification
Wide dynamic range AGC transimpedance amplifier(150MHz)
SA5223
DC ELECTRICAL CHARACTERISTICS
Typical data and Min and Max limits apply at TA = 25°C, and VCC = +5V, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
SA5223
Min
Typ
Max
UNIT
VIN
Input bias voltage
1.3
1.55
1.8
VO±
Output bias voltage
2.9
3.2
3.5
V
V
VOS
Output offset voltage (VPIN6 - VPIN7)
-200
80
+200
mV
ICC
Supply current
15
22
29
IOMAX
Output sink/source current
1.5
2
NOTE: Standard deviations are estimated from design simulations to represent manufacturing variations over the life of the product.
mA
mA
AC ELECTRICAL CHARACTERISTICS
Typical data and Min and Max limits apply at TA = 25°C and VCC = +5V, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
SA5223
Min
Typ
Max
UNIT
RT
Transresistance (differential output)
DC tested, RL = ∞, IIN = 0-1µA
90
125
160
kΩ
RT
Transresistance
(single-ended output)
DC tested, RL = ∞, IIN = 0-1µA
45
62.5
80
kΩ
RO
Output resistance
(differential output)
f3dB
Output resistance
(single-ended output)
Bandwidth (-3dB)
RIN
Input resistance
CIN
Input capacitance1
RO
CINT
∆R/∆V
∆R/∆T
IIN
Input capacitance including Miller multiplied
capacitance
Transresistance power supply sensitivity
Transresistance ambient temperature sensitivity
RMS noise current spectral density (referred
to input)2
IINMAX
tr, tf
tD
DC tested
70
Ω
150
MHz
110
250
Ω
0.7
pF
4.0
pF
VCC1 = VCC2 = 5 ±0.5V
3
%/V
∆TA = TA MAX - TA MIN
0.09
%/oC
Test Circuit 2, f = 10MHz
1.17
Test circuit 2,
∆f = 50MHz
7
CS = 0.4pF
dR T
dt
Ω
DC tested
IT
VOLMAX
140
Test Circuit 1
Integrated RMS noise current over the bandwidth
idth (referred to inp
input)
t)
CS = 0.1
0.1pF
F
PSRR
PSRR
DC tested
∆f = 100MHz
12
∆f = 150MHz
16
∆f = 50MHz
8
∆f = 100MHz
13
pAń ǸHz
nA
∆f = 150MHz
DC Tested, ∆VCC = ±0.5V
f = 1.0MHz, Test Circuit 3
18
–55
–20
dB
dB
Maximum differential output AC voltage
Ii = 0–2mA peak AC
800
mV
AGC loop time constant parameter4
10µA to 20µA steps
1
dB/ms
Test circuit 4
+2
mA
Output rise and fall times
10 – 90%
2.2
ns
Group delay
f = 10MHz
2.2
ns
Power supply rejection ratio (change in VOS)
Power supply rejection ratio3
Maximum input amplitude for output duty
cycle of 50 ±5%
NOTES:
1. Does not include Miller-multiplied capacitance of input device.
2. Noise performance measured differential. Single-ended output noise is higher due to CM noise.
3. PSRR is output referenced and is circuit board layout dependent at higher frequencies. For best performance use a RF filter in VCC line.
4. This implies that the SA5223 gain will change 1dB (10%) in the absence of data for 1ms (i.e., can handle bursty data without degrading Bit
Error Rate (BER) for 100,000 cycles at 100MHz).
1995 Oct 24
3
Philips Semiconductors
Product specification
Wide dynamic range AGC transimpedance amplifier(150MHz)
SA5223
TEST CIRCUITS
SINGLE-ENDED
R
TSE
+ 12.4 @ S 21 @ R IN,
R IN + 1k ) R
INSS
[ 1250W
SPECTRUM ANALYZER
50Ω
NETWORK ANALYZER
VCC
S-PARAMETER TEST SET
PORT1
.1µF
PORT2
VCC
ZO = 50Ω
0.1uF
R=1k
GND1
50
ZO = 50Ω
.1uF
500
OUT
IN DUT
OUT
OUT
IN DUT
OUT
CS
500 .1uF
GND2
.1µF
1.0µF
NE5209
GND2
GND1
1.0µF
50Ω
50
Test Circuit 2: Noise
Test Circuit 1: Bandwidth
SD00370
SD00371
5V
BIAS TEE
NETWORK ANALYZER
S-PARAMETER TEST SET
PORT1
PORT2
50Ω
CAL
0.1uF
NC
VCC
.1uF
OUT
IN DUT
OUT
.1uF
NHO300HB
50Ω
UNBAL.
100Ω
BAL.
GND2
GND1
SD00372
Test Circuit 3: PSRR
5V
50% DUTY CYCLE
PULSE GEN
500Ω
OFFSET
.1µF
OUT
0.1uF
IN
A
DUT
500Ω
OUT
GND1
.1µF
B
GND2
Test Circuit 4: Duty Cycle Distortion
1995 Oct 24
ZO = 50Ω
OSCILLOSCOPE
1kΩ
50Ω
TRANSFORMER
CONVERSION
LOSS = 9dB
4
ZO = 50Ω
Meaurement done using
differential wave forms
SD00373
Philips Semiconductors
Product specification
Wide dynamic range AGC transimpedance amplifier(150MHz)
GND
G1
IN
2
3
VCC
8
1
SA5223
PAD CENTER LOCATIONS
X(mm)
Y(mm)
NC NC
OUT
7
OUTB
6
NC
GND1
IN
GND2
OUT
OUTB
VCC
-0.400
-0.400
+0.400
+0.400
+0.400
+0.400
DIE SIZE
X(mm)
Y(mm)
1.08
GND
5
4
-0.053
-0.223
-0.342
-0.046
+0.154
+0.380
1.32
G2
SD00507
Figure 1. SA5223 Bonding Diagram
carriers, it is impossible to guarantee 100% functionality through this
process. There is no post waffle pack testing performed on
individual die.
Die Sales Disclaimer
Due to the limitations in testing high frequency and other parameters
at the die level, and the fact that die electrical characteristics may
shift after packaging, die electrical parameters are not specified and
die are not guaranteed to meet electrical characteristics (including
temperature range) as noted in this data sheet which is intended
only to specify electrical characteristics for a packaged device.
Since Philips Semiconductors has no control of third party
procedures in the handling or packaging of die, Philips
Semiconductors assumes no liability for device functionality or
performance of the die or systems on any die sales.
All die are 100% functional with various parametrics tested at the
wafer level, at room temperature only (25°C), and are guaranteed to
be 100% functional as a result of electrical testing to the point of
wafer sawing only. Although the most modern processes are
utilized for wafer sawing and die pick and place into waffle pack
1995 Oct 24
Although Philips Semiconductors typically realizes a yield of 85%
after assembling die into their respective packages, with care
customers should achieve a similar yield. However, for the reasons
stated above, Philips Semiconductors cannot guarantee this or any
other yield on any die sales.
5
1995 Oct 24
6
4
3
2
1
SA5223
GND4
IN
GND1
GND3
U1
Figure 2. SONET Test Board — 155Mb/s (1300nm)
DIGITAL GND
ANALOG GND
ABB HAFO 1.5GHz PIN DIODE
*D1: 1A358 –λ = 1300nm
D1*
C2
0.1uF
R1
100 Ω
+5V
C1
0.1uF
L1
10uH
GND2
OUT
OUT
Vcc
C3
0.1uF
R2
0Ω
5
6
7
8
TOP PLANE
R4
120Ω
R3
120Ω
C4
4.7pF
BOTTOM PLANE
C9
0.1uF
+5V
C8
0.1uF
C6
0.1uF
+
L2
10uH
C10
4.7uF
C8
0.1uF
C5
0.1uF
8
7
6
5
4
3
2
1
NE5224
JAM
CF
VccA
D_IN
D_IN
GNDA
CAZP
CAZN
U2
ST
ST
GND_E
D_OUT
D_OUT
VccE
VREF
VSET
9
10
11
12
13
14
15
16
R6
130Ω
R7
82 Ω
+3.2V
R5
5Ω
R8
5Ω
+5V
R11
3k Ω
C11
0.1uF
R10
130Ω
C12
0.1uF
R9
82 Ω
+5V
R12
1.8kΩ
C13
0.1uF
DOUT
DOUT
Philips Semiconductors
Product specification
Wide dynamic range AGC transimpedance amplifier(150MHz)
SA5223
SD00521
Philips Semiconductors
Product specification
SA5223
GND
R4
C5
R2
U1
GND
C3
C8
L1
C6
C9
+5V
C7
C10
L2
C4
GND
R3
GND
+5V
SA5223/5224
SONET – 155MB/s
FO11000
Wide dynamic range AGC transimpedance amplifier(150MHz)
C1
Dout
C13
R11
R12
U2
R1
C12
R5
R8
R9
R7
R10
R6
C11
C2
Dout
D1
TOP VIEW
BOTTOM VIEW
SD00522
Figure 3. SA5223 Board Layout (NOT ACTUAL SIZE)
1995 Oct 24
7
Philips Semiconductors
Product specification
28.00
100
26.00
90
VCC = 5.5V
24.00
VCC = 5.0V
22.00
VCC = 5.5V
VCC = 5.0V
70
VCC = 4.5V
50
18.00
40
-50
16.00
-50
-25
0
25
50
TEMPERATURE (°C)
75
-25
0
100
SD00527
25
50
75
100
TEMPERATURE (°C)
SD00530
Figure 4. SA5223 ICC vs Temperature
Figure 7. SA5223 Output VOS vs Temperature
3.500
1.900
3.400
1.800
VOUT
3.300
(V)
1.700
VCC = 5.5V
VCC = 5.0V
VCC = 4.5V
1.600
V OUT
SUPPLY CURRENT (mA)
VOS = (IIN = 0) = VOUT – VOUT
RL = INFINITY
60
VCC = 4.5V
20.00
SA5223
80
VOS (mV)
SUPPLY CURRENT (mA)
Wide dynamic range AGC transimpedance amplifier(150MHz)
1.500
RL = INFINITY
VCC = 5.0V, Temperature = 25°C
3.200
3.100
VOUT
1.400
3.000
1.300
2.900
1.200
-50
0
-25
0
25
50
TEMPERATURE (°C)
75
2
3
4
5
6
7
8
9
10
SD00531
Figure 8. SA5223 Output Voltage vs DC Input Current
(for small input current)
Figure 5. SA5223 Input VBIAS vs Temperature
4.200
3.800
4.000
3.600
RL = INFINITY
VCC = 5.0V, Temperature = 25°C
3.800
VCC = 5.5V
VOUT
3.600
3.400
3.200
VOUT (V)
OUTPUT VBIAS (V)
1
DC INPUT CURRENT (µA)
100
SD00528
VCC = 5.0V
3.400
3.200
3.000
VOUT
2.800
3.000
2.600
2.800
2.400
VCC = 4.5V
2.200
2.600
-50
2.000
-25
0
25
50
TEMPERATURE (°C)
75
100
SD00529
1
Figure 6. SA5223 Output VBIAS vs Temperature
1995 Oct 24
10
100
1000
DC INPUT CURRENT (µA LOG)
10000
SD00532
Figure 9. SA5223 Output Voltage vs DC Input Current
(for large input current)
8
Philips Semiconductors
Product specification
Wide dynamic range AGC transimpedance amplifier(150MHz)
0.350
1000
85°C
0.300
RL = INFINITY
VCC = 5.0V
Temperature = -40, 25, 85°C
RT = VOD / IIN
25°C
100
RL = INFINITY
VCC = 5.0V, Temperature = 25°C
VOD = VOUT – VOUT – VOS
0.200
RT (K Ω, LOG)
(V)
0.250
VOD
SA5223
0.150
0.100
-40°C
10
1
0.050
0
0.000
0
1
2
3
7
4
5
6
DC INPUT CURRENT (µA)
8
9
1
10
10
100
1000
10000
DC INPUT CURRENT (µA LOG)
SD00533
SD00536
Figure 10. SA5223 Differential Output vs DC IIN
(for small input current)
Figure 13. SA5223 Differential RT vs DC IIN
(for large input current)
160
1.800
1.600
120
RT (K Ω )
1.200
(V)
VCC = 5.5V
RL = INFINITY
VCC = 5.0V, Temperature = 25°C
VOD = VOUT – VOUT – VOS
1.400
1.000
V OD
RL = INFINITY
VCC = 5.0V
Temperature = 25°C
RT = VOD / IIN
140
100
VCC = 4.5V
0.800
60
0.600
40
0.400
VCC = 5.0V
80
20
0.200
0
0.000
1
10
100
1000
DC INPUT CURRENT (µA, LOG)
0
SD00534
2
3
4
5
6
7
DC INPUT CURRENT (µA)
8
9
10
SD00537
Figure 14. SA5223 Differential RT vs DC IIN
(for small input current)
Figure 11. SA5223 Differential Output vs DC IIN
1000
160
85°C
RL = INFINITY
VCC = 5.0V
Temperature = -40, 25, 85°C
RT = VOD / IIN
140
100
RT (K Ω, LOG)
120
RT (K Ω )
1
10000
-40°C
100
25°C
80
60
25°C
RL = INFINITY
VCC = 4.5, 5.0, 5.0V
Temperature = 25°C
RT = VOD / IIN
10
85°C
1
40
-40°C
20
0
1
0
0
1
2
3
4
5
6
7
DC INPUT CURRENT (µA)
8
100
1000
DC INPUT CURRENT (µA LOG)
10000
SD00538
Figure 15. SA5223 Differential RT vs DC IIN
(for large input current)
Figure 12. SA5223 Differential RT vs DC IIN
(for small input current)
1995 Oct 24
10
9
10
SD00535
9
Philips Semiconductors
Product specification
Wide dynamic range AGC transimpedance amplifier(150MHz)
9
16
8
VCC = 5.0V
SINGLE-ENDED OUTPUT
14
7
S 21 GROUP DELAY (ns)
12
S21 (dB)
10
8
6
4
-40°C
2
0°C
25°C
0
70°C
-2
10
FREQUENCY (MHz)
100
6
4
3
2
1
-1
300
SD00539
START = 1MHz
Figure 16. Insertion Gain vs Frequency
9.0
VCC = 5.0V
Temperature = 25°C
CS = 0pF
INPUT NOISE (PA/ √ Hz)
8.0
10
8
6
4
2
VCC = 5.5V
VCC = 5.0V
VCC = 4.5V
0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
-2
0.0
10
FREQUENCY (MHz)
100
1
300
SD00540
10
FREQUENCY (MHz)
100
300
SD00542
Figure 19. SA5223 Input Current RMS Noise Spectral Density
Figure 17. Insertion Gain vs Frequency
1995 Oct 24
STOP = 200MHz
SD00541
10.0
TEMPERATURE = 25°C
SINGLE-ENDED OUTPUT
12
-4
1
FREQUENCY (MHz, LINEAR)
Figure 18. Group Delay vs Frequency
16
14
SINGLE-ENDED OUTPUT
TEMPERATURE = 25°C
VCC = 5.0V
5
0
85°C
-4
1
S 21 (dB)
SA5223
10
Philips Semiconductors
Product specification
Wide dynamic range AGC transimpedance amplifier (150MHz)
SO8: plastic small outline package; 8 leads; body width 3.9mm
1995 Oct 24
11
SA5223
SOT96-1
Philips Semiconductors
Product specification
Wide dynamic range AGC transimpedance amplifier (150MHz)
SA5223
Data sheet status
Data sheet
status
Product
status
Definition [1]
Objective
specification
Development
This data sheet contains the design target or goal specifications for product development.
Specification may change in any manner without notice.
Preliminary
specification
Qualification
This data sheet contains preliminary data, and supplementary data will be published at a later date.
Philips Semiconductors reserves the right to make chages at any time without notice in order to
improve design and supply the best possible product.
Product
specification
Production
This data sheet contains final specifications. Philips Semiconductors reserves the right to make
changes at any time without notice in order to improve design and supply the best possible product.
[1] Please consult the most recently issued datasheet before initiating or completing a design.
Definitions
Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or
at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended
periods may affect device reliability.
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips
Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or
modification.
Disclaimers
Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications
do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
 Copyright Philips Electronics North America Corporation 2000
All rights reserved. Printed in U.S.A.
Philips Semiconductors
811 East Arques Avenue
P.O. Box 3409
Sunnyvale, California 94088–3409
Telephone 800-234-7381
Date of release: 08-98
Document order number:
1995 Oct 24
12
9397 750 06831