INTEGRATED CIRCUITS SA5223 Wide dynamic range AGC transimpedance amplifier (150MHz) Product specification IC19 Data Handbook Philips Semiconductors 1995 Oct 24 Philips Semiconductors Product specification Wide dynamic range AGC transimpedance amplifier(150MHz) DESCRIPTION SA5223 PIN DESCRIPTION The SA5223 is a wide-band, low-noise transimpedance amplifier with differential outputs, incorporating AGC and optimized for signal recovery in wide-dynamic-range fiber optic receivers, such as SONET. The part is also suited for many other RF and fiber optic applications as a general purpose gain block. D Package The SA5223 is the first AGC amplifier to incorporate internal AGC loop hold capacitor, therefore, no external components are required. The internal AGC loop enables the SA5223 to effortlessly handle bursty data over a range of nA to mA of signal current, positive direction (sinking) only. GND3 1 8 VCC GND1 2 7 OUT IN 3 6 OUT GND4 4 5 GND2 SD00369 FEATURES • Extremely low noise: 1.17pAń ǸHz • Single 5V supply • Low supply current: 22mA • Large bandwidth: 150MHz • Differential outputs • Internal hold capacitor • Low input/output impedances • High power-supply-rejection ratio: 55dB • Tight transresistance control • High input overload: 4mA • 2000V HBM ESD protection APPLICATIONS • OC3 SONET preamp (see AN1431 for detailed analysis • Current-to-voltage converters • Wide-band gain block • Medical and scientific instrumentation • Sensor preamplifiers • Single-ended to differential conversion • Low noise RF amplifiers • RF signal processing ORDERING INFORMATION DESCRIPTION 8-Pin Plastic Small Outline TEMPERATURE RANGE ORDER CODE DWG # -40 to +85°C SA5223D SOT96-1 For unpackaged die please contact factory. ABSOLUTE MAXIMUM RATINGS SYMBOL VCC PARAMETER RATING UNITS 6 V Power supply voltage TA Ambient temperature range -40 to +85 TJ Junction temperature range -55 to +150 TSTG Storage temperature range -65 to +150 °C °C °C 0.78 W 5 mA PD IINMAX Power dissipation TA = 25oC (still air)1 Maximum input current NOTE: 1. Maximum power dissipation is determined by the operating ambient temperature and the thermal resistance θJA = 158oC/W. Derate 6.2mW/°C above 25°C. RECOMMENDED OPERATING CONDITIONS SYMBOL VCC PARAMETER RATING Power supply voltage 4.5 to 5.5 TA Ambient temperature range: SA grade -40 to +85 TJ Junction temperature range: SA grade -40 to +105 1995 Oct 24 2 UNITS V °C °C 853-1816 15939 Philips Semiconductors Product specification Wide dynamic range AGC transimpedance amplifier(150MHz) SA5223 DC ELECTRICAL CHARACTERISTICS Typical data and Min and Max limits apply at TA = 25°C, and VCC = +5V, unless otherwise specified. SYMBOL PARAMETER TEST CONDITIONS SA5223 Min Typ Max UNIT VIN Input bias voltage 1.3 1.55 1.8 VO± Output bias voltage 2.9 3.2 3.5 V V VOS Output offset voltage (VPIN6 - VPIN7) -200 80 +200 mV ICC Supply current 15 22 29 IOMAX Output sink/source current 1.5 2 NOTE: Standard deviations are estimated from design simulations to represent manufacturing variations over the life of the product. mA mA AC ELECTRICAL CHARACTERISTICS Typical data and Min and Max limits apply at TA = 25°C and VCC = +5V, unless otherwise specified. SYMBOL PARAMETER TEST CONDITIONS SA5223 Min Typ Max UNIT RT Transresistance (differential output) DC tested, RL = ∞, IIN = 0-1µA 90 125 160 kΩ RT Transresistance (single-ended output) DC tested, RL = ∞, IIN = 0-1µA 45 62.5 80 kΩ RO Output resistance (differential output) f3dB Output resistance (single-ended output) Bandwidth (-3dB) RIN Input resistance CIN Input capacitance1 RO CINT ∆R/∆V ∆R/∆T IIN Input capacitance including Miller multiplied capacitance Transresistance power supply sensitivity Transresistance ambient temperature sensitivity RMS noise current spectral density (referred to input)2 IINMAX tr, tf tD DC tested 70 Ω 150 MHz 110 250 Ω 0.7 pF 4.0 pF VCC1 = VCC2 = 5 ±0.5V 3 %/V ∆TA = TA MAX - TA MIN 0.09 %/oC Test Circuit 2, f = 10MHz 1.17 Test circuit 2, ∆f = 50MHz 7 CS = 0.4pF dR T dt Ω DC tested IT VOLMAX 140 Test Circuit 1 Integrated RMS noise current over the bandwidth idth (referred to inp input) t) CS = 0.1 0.1pF F PSRR PSRR DC tested ∆f = 100MHz 12 ∆f = 150MHz 16 ∆f = 50MHz 8 ∆f = 100MHz 13 pAń ǸHz nA ∆f = 150MHz DC Tested, ∆VCC = ±0.5V f = 1.0MHz, Test Circuit 3 18 –55 –20 dB dB Maximum differential output AC voltage Ii = 0–2mA peak AC 800 mV AGC loop time constant parameter4 10µA to 20µA steps 1 dB/ms Test circuit 4 +2 mA Output rise and fall times 10 – 90% 2.2 ns Group delay f = 10MHz 2.2 ns Power supply rejection ratio (change in VOS) Power supply rejection ratio3 Maximum input amplitude for output duty cycle of 50 ±5% NOTES: 1. Does not include Miller-multiplied capacitance of input device. 2. Noise performance measured differential. Single-ended output noise is higher due to CM noise. 3. PSRR is output referenced and is circuit board layout dependent at higher frequencies. For best performance use a RF filter in VCC line. 4. This implies that the SA5223 gain will change 1dB (10%) in the absence of data for 1ms (i.e., can handle bursty data without degrading Bit Error Rate (BER) for 100,000 cycles at 100MHz). 1995 Oct 24 3 Philips Semiconductors Product specification Wide dynamic range AGC transimpedance amplifier(150MHz) SA5223 TEST CIRCUITS SINGLE-ENDED R TSE + 12.4 @ S 21 @ R IN, R IN + 1k ) R INSS [ 1250W SPECTRUM ANALYZER 50Ω NETWORK ANALYZER VCC S-PARAMETER TEST SET PORT1 .1µF PORT2 VCC ZO = 50Ω 0.1uF R=1k GND1 50 ZO = 50Ω .1uF 500 OUT IN DUT OUT OUT IN DUT OUT CS 500 .1uF GND2 .1µF 1.0µF NE5209 GND2 GND1 1.0µF 50Ω 50 Test Circuit 2: Noise Test Circuit 1: Bandwidth SD00370 SD00371 5V BIAS TEE NETWORK ANALYZER S-PARAMETER TEST SET PORT1 PORT2 50Ω CAL 0.1uF NC VCC .1uF OUT IN DUT OUT .1uF NHO300HB 50Ω UNBAL. 100Ω BAL. GND2 GND1 SD00372 Test Circuit 3: PSRR 5V 50% DUTY CYCLE PULSE GEN 500Ω OFFSET .1µF OUT 0.1uF IN A DUT 500Ω OUT GND1 .1µF B GND2 Test Circuit 4: Duty Cycle Distortion 1995 Oct 24 ZO = 50Ω OSCILLOSCOPE 1kΩ 50Ω TRANSFORMER CONVERSION LOSS = 9dB 4 ZO = 50Ω Meaurement done using differential wave forms SD00373 Philips Semiconductors Product specification Wide dynamic range AGC transimpedance amplifier(150MHz) GND G1 IN 2 3 VCC 8 1 SA5223 PAD CENTER LOCATIONS X(mm) Y(mm) NC NC OUT 7 OUTB 6 NC GND1 IN GND2 OUT OUTB VCC -0.400 -0.400 +0.400 +0.400 +0.400 +0.400 DIE SIZE X(mm) Y(mm) 1.08 GND 5 4 -0.053 -0.223 -0.342 -0.046 +0.154 +0.380 1.32 G2 SD00507 Figure 1. SA5223 Bonding Diagram carriers, it is impossible to guarantee 100% functionality through this process. There is no post waffle pack testing performed on individual die. Die Sales Disclaimer Due to the limitations in testing high frequency and other parameters at the die level, and the fact that die electrical characteristics may shift after packaging, die electrical parameters are not specified and die are not guaranteed to meet electrical characteristics (including temperature range) as noted in this data sheet which is intended only to specify electrical characteristics for a packaged device. Since Philips Semiconductors has no control of third party procedures in the handling or packaging of die, Philips Semiconductors assumes no liability for device functionality or performance of the die or systems on any die sales. All die are 100% functional with various parametrics tested at the wafer level, at room temperature only (25°C), and are guaranteed to be 100% functional as a result of electrical testing to the point of wafer sawing only. Although the most modern processes are utilized for wafer sawing and die pick and place into waffle pack 1995 Oct 24 Although Philips Semiconductors typically realizes a yield of 85% after assembling die into their respective packages, with care customers should achieve a similar yield. However, for the reasons stated above, Philips Semiconductors cannot guarantee this or any other yield on any die sales. 5 1995 Oct 24 6 4 3 2 1 SA5223 GND4 IN GND1 GND3 U1 Figure 2. SONET Test Board — 155Mb/s (1300nm) DIGITAL GND ANALOG GND ABB HAFO 1.5GHz PIN DIODE *D1: 1A358 –λ = 1300nm D1* C2 0.1uF R1 100 Ω +5V C1 0.1uF L1 10uH GND2 OUT OUT Vcc C3 0.1uF R2 0Ω 5 6 7 8 TOP PLANE R4 120Ω R3 120Ω C4 4.7pF BOTTOM PLANE C9 0.1uF +5V C8 0.1uF C6 0.1uF + L2 10uH C10 4.7uF C8 0.1uF C5 0.1uF 8 7 6 5 4 3 2 1 NE5224 JAM CF VccA D_IN D_IN GNDA CAZP CAZN U2 ST ST GND_E D_OUT D_OUT VccE VREF VSET 9 10 11 12 13 14 15 16 R6 130Ω R7 82 Ω +3.2V R5 5Ω R8 5Ω +5V R11 3k Ω C11 0.1uF R10 130Ω C12 0.1uF R9 82 Ω +5V R12 1.8kΩ C13 0.1uF DOUT DOUT Philips Semiconductors Product specification Wide dynamic range AGC transimpedance amplifier(150MHz) SA5223 SD00521 Philips Semiconductors Product specification SA5223 GND R4 C5 R2 U1 GND C3 C8 L1 C6 C9 +5V C7 C10 L2 C4 GND R3 GND +5V SA5223/5224 SONET – 155MB/s FO11000 Wide dynamic range AGC transimpedance amplifier(150MHz) C1 Dout C13 R11 R12 U2 R1 C12 R5 R8 R9 R7 R10 R6 C11 C2 Dout D1 TOP VIEW BOTTOM VIEW SD00522 Figure 3. SA5223 Board Layout (NOT ACTUAL SIZE) 1995 Oct 24 7 Philips Semiconductors Product specification 28.00 100 26.00 90 VCC = 5.5V 24.00 VCC = 5.0V 22.00 VCC = 5.5V VCC = 5.0V 70 VCC = 4.5V 50 18.00 40 -50 16.00 -50 -25 0 25 50 TEMPERATURE (°C) 75 -25 0 100 SD00527 25 50 75 100 TEMPERATURE (°C) SD00530 Figure 4. SA5223 ICC vs Temperature Figure 7. SA5223 Output VOS vs Temperature 3.500 1.900 3.400 1.800 VOUT 3.300 (V) 1.700 VCC = 5.5V VCC = 5.0V VCC = 4.5V 1.600 V OUT SUPPLY CURRENT (mA) VOS = (IIN = 0) = VOUT – VOUT RL = INFINITY 60 VCC = 4.5V 20.00 SA5223 80 VOS (mV) SUPPLY CURRENT (mA) Wide dynamic range AGC transimpedance amplifier(150MHz) 1.500 RL = INFINITY VCC = 5.0V, Temperature = 25°C 3.200 3.100 VOUT 1.400 3.000 1.300 2.900 1.200 -50 0 -25 0 25 50 TEMPERATURE (°C) 75 2 3 4 5 6 7 8 9 10 SD00531 Figure 8. SA5223 Output Voltage vs DC Input Current (for small input current) Figure 5. SA5223 Input VBIAS vs Temperature 4.200 3.800 4.000 3.600 RL = INFINITY VCC = 5.0V, Temperature = 25°C 3.800 VCC = 5.5V VOUT 3.600 3.400 3.200 VOUT (V) OUTPUT VBIAS (V) 1 DC INPUT CURRENT (µA) 100 SD00528 VCC = 5.0V 3.400 3.200 3.000 VOUT 2.800 3.000 2.600 2.800 2.400 VCC = 4.5V 2.200 2.600 -50 2.000 -25 0 25 50 TEMPERATURE (°C) 75 100 SD00529 1 Figure 6. SA5223 Output VBIAS vs Temperature 1995 Oct 24 10 100 1000 DC INPUT CURRENT (µA LOG) 10000 SD00532 Figure 9. SA5223 Output Voltage vs DC Input Current (for large input current) 8 Philips Semiconductors Product specification Wide dynamic range AGC transimpedance amplifier(150MHz) 0.350 1000 85°C 0.300 RL = INFINITY VCC = 5.0V Temperature = -40, 25, 85°C RT = VOD / IIN 25°C 100 RL = INFINITY VCC = 5.0V, Temperature = 25°C VOD = VOUT – VOUT – VOS 0.200 RT (K Ω, LOG) (V) 0.250 VOD SA5223 0.150 0.100 -40°C 10 1 0.050 0 0.000 0 1 2 3 7 4 5 6 DC INPUT CURRENT (µA) 8 9 1 10 10 100 1000 10000 DC INPUT CURRENT (µA LOG) SD00533 SD00536 Figure 10. SA5223 Differential Output vs DC IIN (for small input current) Figure 13. SA5223 Differential RT vs DC IIN (for large input current) 160 1.800 1.600 120 RT (K Ω ) 1.200 (V) VCC = 5.5V RL = INFINITY VCC = 5.0V, Temperature = 25°C VOD = VOUT – VOUT – VOS 1.400 1.000 V OD RL = INFINITY VCC = 5.0V Temperature = 25°C RT = VOD / IIN 140 100 VCC = 4.5V 0.800 60 0.600 40 0.400 VCC = 5.0V 80 20 0.200 0 0.000 1 10 100 1000 DC INPUT CURRENT (µA, LOG) 0 SD00534 2 3 4 5 6 7 DC INPUT CURRENT (µA) 8 9 10 SD00537 Figure 14. SA5223 Differential RT vs DC IIN (for small input current) Figure 11. SA5223 Differential Output vs DC IIN 1000 160 85°C RL = INFINITY VCC = 5.0V Temperature = -40, 25, 85°C RT = VOD / IIN 140 100 RT (K Ω, LOG) 120 RT (K Ω ) 1 10000 -40°C 100 25°C 80 60 25°C RL = INFINITY VCC = 4.5, 5.0, 5.0V Temperature = 25°C RT = VOD / IIN 10 85°C 1 40 -40°C 20 0 1 0 0 1 2 3 4 5 6 7 DC INPUT CURRENT (µA) 8 100 1000 DC INPUT CURRENT (µA LOG) 10000 SD00538 Figure 15. SA5223 Differential RT vs DC IIN (for large input current) Figure 12. SA5223 Differential RT vs DC IIN (for small input current) 1995 Oct 24 10 9 10 SD00535 9 Philips Semiconductors Product specification Wide dynamic range AGC transimpedance amplifier(150MHz) 9 16 8 VCC = 5.0V SINGLE-ENDED OUTPUT 14 7 S 21 GROUP DELAY (ns) 12 S21 (dB) 10 8 6 4 -40°C 2 0°C 25°C 0 70°C -2 10 FREQUENCY (MHz) 100 6 4 3 2 1 -1 300 SD00539 START = 1MHz Figure 16. Insertion Gain vs Frequency 9.0 VCC = 5.0V Temperature = 25°C CS = 0pF INPUT NOISE (PA/ √ Hz) 8.0 10 8 6 4 2 VCC = 5.5V VCC = 5.0V VCC = 4.5V 0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 -2 0.0 10 FREQUENCY (MHz) 100 1 300 SD00540 10 FREQUENCY (MHz) 100 300 SD00542 Figure 19. SA5223 Input Current RMS Noise Spectral Density Figure 17. Insertion Gain vs Frequency 1995 Oct 24 STOP = 200MHz SD00541 10.0 TEMPERATURE = 25°C SINGLE-ENDED OUTPUT 12 -4 1 FREQUENCY (MHz, LINEAR) Figure 18. Group Delay vs Frequency 16 14 SINGLE-ENDED OUTPUT TEMPERATURE = 25°C VCC = 5.0V 5 0 85°C -4 1 S 21 (dB) SA5223 10 Philips Semiconductors Product specification Wide dynamic range AGC transimpedance amplifier (150MHz) SO8: plastic small outline package; 8 leads; body width 3.9mm 1995 Oct 24 11 SA5223 SOT96-1 Philips Semiconductors Product specification Wide dynamic range AGC transimpedance amplifier (150MHz) SA5223 Data sheet status Data sheet status Product status Definition [1] Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make chages at any time without notice in order to improve design and supply the best possible product. Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. [1] Please consult the most recently issued datasheet before initiating or completing a design. Definitions Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Disclaimers Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Copyright Philips Electronics North America Corporation 2000 All rights reserved. Printed in U.S.A. Philips Semiconductors 811 East Arques Avenue P.O. Box 3409 Sunnyvale, California 94088–3409 Telephone 800-234-7381 Date of release: 08-98 Document order number: 1995 Oct 24 12 9397 750 06831