NTE123AP Silicon NPN Transistor Audio Amplifier, Switch (Compl to NTE159) Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA Total Device Dissipation (TA = 25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/°C Total Device Dissipation (TC = 25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Thermal Resistance, Junction to Case, RθJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125°C/W Thermal Resistance, Junction to Ambient, RθJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 357°C/W Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0, Note 1 40 – – V Collector–Base Breakdown Voltage V(BR)CBO IC = 0.1mA, IE = 0 60 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 0.1mA, IC = 0 6 – – V Collector Cutoff Current ICEV VCE = 35V, VEB(off) = 0.4V – – 0.1 µA Base Cutoff Current IBEV VCE = 35V, VEB(off) = 0.4V – – 0.1 µA hFE VCE = 1V, IC = 0.1mA 20 – – VCE = 1V, IC = 1mA 40 – – VCE = 1V, IC = 10mA 80 – – VCE = 1V, IC = 150mA 100 – 300 VCE = 1V, IC = 500mA 40 – – ON Characteristics (Note 1) DC Current Gain Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit IC = 150mA, IB = 15mA – – 0.4 V IC = 500mA, IB = 50mA – – 0.75 V IC = 150mA, IB = 15mA 0.75 – 0.95 V IC = 500mA, IB = 50mA – – 1.2 V 250 – – MHz ON Characteristics (Note 1) (Cont’d) Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage VCE(sat) VBE(sat) Small–Signal Characteristics Current Gain–Bandwidth Product fT IC = 20mA, VCE = 10V, f = 100MHz Collector–Base Capacitance Ccb VCB = 5V, IE = 0, f = 100kHz – – 6.5 pF Emitter–Base Capacitance Ceb VCB = 0.5V, IC = 0, f = 100kHz – – 30 pF Input Impedance hie IC = 1mA, VCE = 10V, f = 1kHz 1.0 – 15 kΩ Voltage Feedback Ratio hre IC = 1mA, VCE = 10V, f = 1kHz 0.1 – 8.0 x 10–6 Small–Signal Current Gain hfe IC = 1mA, VCE = 10V, f = 1kHz 40 – 500 Output Admittance hoe IC = 1mA, VCE = 10V, f = 1kHz 1.0 – 30 µmhos VCC = 30V, VEB(off) = 2V, IC = 150mA, IB1 = 15mA – – 15 ns – – 20 ns VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA – – 225 ns – – 30 ns Switching Characteristics Delay Time td Rise Time tr Storage Time ts Fall Time tf Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. .135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min E B C .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max