Ordering number : ENN4228B 2SK1412LS N-Channel Silicon MOSFET 2SK1412LS Ultrahigh-Speed Switching Applications Features • • • • Package Dimensions Low ON-resistance, low input capacitance. Ultrahigh-speed switching. High reliability (Adoption of HVP process). Micaless package facilitating mounting. unit : mm 2078C [2SK1412LS] 10.0 4.5 2.8 0.6 16.1 16.0 3.5 7.2 3.2 1.2 1.2 14.0 3.6 0.9 0.75 0.7 1 2 3 2.4 1 : Gate 2 : Drain 3 : Source Specifications 2.55 Absolute Maximum Ratings at Ta=25°C Parameter Symbol 2.55 SANYO : TO-220FI(LS) Conditions Ratings Unit Drain-to-Source Voltage VDSS 1500 Gate-to-Source Voltage VGSS ±20 V ID 0.1 A Drain Current (DC) Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% V 0.2 A 2.0 W Allowable Power Dissipation PD 20 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Tc=25°C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current V(BR)DSS IDSS IGSS Conditions ID=1mA, VGS=0 VDS=1200V, VGS=0 VGS=±20V, VDS=0 Ratings min typ max 1500 (Note) Be careful in handling the 2SK1412LS because it has no protection diode between gate and source. Marking : K1412 Unit V 100 µA ±100 nA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N1501 TS IM TA-3431 / 51099 TH (KT) / 41293 TH (KOTO) AX-9637 No.4228-1/4 2SK1412LS Continued from preceding page. Parameter Symbol Ratings Conditions min typ Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.5 Forward Transfer Admittance yfs RDS(on) VDS=20V, ID=50mA 50 Static Drain-to-Source On-State Resistance Unit max 3.5 V 100 ID=50mA, VGS=10V VDS=20V, f=1MHz mS 140 Ω 200 Input Capacitance Ciss Output Capacitance Coss pF Crss VDS=20V, f=1MHz VDS=20V, f=1MHz 12 Reverse Transfer Capacitance 3.0 pF Turn-ON Delay Time td(on) See specified Test Circuit. 15 ns Rise Time tr td(off) See specified Test Circuit. 25 ns See specified Test Circuit. 50 ns See specified Test Circuit. 350 IS=0.1A, VGS=0 1.0 Turn-OFF Delay Time Fall Time tf VSD Diode Forward Voltage 40 pF ns 1.5 V Switching Time Test Circuit 10V 0V VDD=200V VIN ID=50mA RL=400Ω VOUT VIN D PW=10µs D.C.≤1% G RGS 50Ω P.G S 2SK1412LS ID -- VDS V Drain Current, ID -- mA 160 V .5 =5 S G ID -- VDS 100 5V .0V 4. 5 80 Drain Current, ID -- mA 200 4.5V 120 80 4.0V 40 V .0 V 60 =5 GS 4.0V 40 3.5V 20 3.5V 3.0V 3.0V 0 0 10 20 30 40 Drain-to-Source Voltage, VDS -- V 0 50 0 VDS=20V 16 20 ITR01045 VGS=10V 180 160 Drain Current, ID -- mA 160 Drain Current, ID -- mA 12 ID -- Tc 200 Tc= --25°C 180 8 Drain-to-Source Voltage, VDS -- V ITR01044 ID -- VGS 200 4 140 25°C 120 100 75°C 80 60 80 20 4 6 8 10 Gate-to-Source Voltage, VGS -- V 12 14 ITR01046 10V 60 20 2 V 100 40 0 20 120 40 0 V DS = 140 0 --40 --20 0 20 40 60 80 Case Temperature, Tc -- °C 100 120 140 ITR01047 No.4228-2/4 2SK1412LS yfs -- ID VDS=20V 3 2 25° C C 75° Tc= 100 7 °C --25 5 3 2 10 240 200 160 120 80 40 5 7 2 10 3 5 7 2 100 Drain Current, ID -- mA 0 3 4 6 VGS=10V ID=50mA Switching Time, SW Time -- ns 240 200 160 120 80 8 10 12 14 Gate-to-Source Voltage, VGS -- V 40 16 ITR01049 SW Time -- ID 2 280 0 --40 2 ITR01048 RDS(on) -- Tc 320 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω ID=50mA Tc=25°C 280 7 5 VGS=10V VDD=200V P.W.=2µs D.C.≤0.5% 1000 7 5 tf 3 2 100 7 td(off) 5 3 tr 2 td(on) 10 7 5 --20 20 0 40 60 80 100 Case Temperature, Tc -- °C 120 5 140 3 Drain Current, ID -- mA 3 2 Coss 10 7 5 Crss 5 7 2 100 3 5 ITR01051 ASO 10µs 10 0µ s 1m 10 s DC 100 ms op ms era tio n IDP=200mA 2 Ciss 3 5 100 3 2 2 10 Drain Current, ID -- mA f=1MHz 7 5 7 ITR01050 Ciss, Coss, Crss -- VDS 2 Ciss, Coss, Crss -- pF RDS(on) -- VGS 320 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Forward Transfer Admittance, yfs -- mS 5 ID=100mA 100 7 5 Operation in this area is limited by RDS(on). 3 2 10 7 5 3 1.0 7 5 2 1.0 0 4 8 12 16 20 24 Drain-to-Source Voltage, VDS -- V 28 32 10 he at sin k 0.8 0.4 0 0 20 40 60 80 100 5 120 Ambient Temperature, Ta -- °C 140 160 ITR01054 7 100 2 3 5 7 1000 Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W 1.6 1.2 3 2 3 ITR01053 PD -- Tc 24 2.0 No 2 ITR01052 PD -- Ta 2.4 Allowable Power Dissipation, PD -- W Tc=25°C Single pulse 20 16 12 8 4 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 ITR01055 No.4228-3/4 2SK1412LS Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2001. Specifications and information herein are subject to change without notice. PS No.4228-4/4