Ordering number:ENN6228A N-Channel Silicon MOSFET 2SK2627 Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON-resistance. · Low Qg. unit:mm 2128 [2SK2627] 0.6 1.0 2.54 1 2 0.7 1.2 4.2 8.4 10.0 0.4 0.2 8.2 7.8 6.2 3 0.3 0.6 1.0 2.54 5.08 6.2 5.2 7.8 1 : Gate 2 : Source 3 : Drain SANYO : ZP (Bottom view) 2.5 10.0 6.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Unit 600 V ±30 V 5 A ID Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 20 A Allowable Power Dissipation Tc=25°C 40 W Channel Temperature PD Tch 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance V(BR)DSS IDSS Conditions ID=1mA, VGS=0 Ratings min typ 600 Unit V VDS=600V, VGS=0 IGSS VGS(off) | yfs | VGS=±30V, VDS=0 RDS(on) Ciss ID=2.5A, VGS=15V 1.5 VDS=10V, ID=1mA VDS=10V, ID=2.5A max 3.5 1.5 1.0 mA ±100 nA 5.5 V 2.0 Ω 3.0 S pF Coss VDS=20V, f=1MHz VDS=20V, f=1MHz 700 Output Capacitance 220 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 110 pF Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N2000TS (KOTO) TA-2882 No.6228–1/4 2SK2627 Continued from preceding page. Parameter Symbol Total Gate Charge Qg Turn-ON Delay Time typ Unit max VDS=200V, VGS=10V, ID=5A 20 nC See specified Test Circuit 20 ns tr See specified Test Circuit 20 ns td(off) See specified Test Circuit 50 ns tf See specified Test Circuit 25 Fall Time Diode Forward Voltage min td(on) Rise Time Turn-OFF Delay Time Ratings Conditions VSD IS=5A, VGS=0 ns 0.87 1.2 V Switching Time Test Circuit VDD=200V 15V 0V VIN ID=2.5A RL=80.0Ω VIN D VOUT PW=1µs D.C.≤0.5% G 2SK2627 P.G S RGS=50Ω I D - VDS V 15 Drain Current, ID – A 4 I D - VDS 10 10V 15V 8V 10V 8 Drain Current, ID – A 5 3 7V 2 1 8V 6 4 7V 2 VGS=6V 0 0 2 4 6 8 VGS=6V 0 0 10 10 Drain-to-Source Voltage, VDS – V ID - VGS Tc=-25°C Drain Current, ID – A 7 6 25°C 5 75°C 4 3 2 1 0 0 2 4 6 8 10 12 Gate-to-Source Voltage, VGS – V 30 40 50 | yfs | - I D 10 VDS=10V Forward Transfer Admittance, | yfs | – S 8 20 Drain-to-Source Voltage, VDS – V 14 16 VDS=10V 7 5 3 C 25° C 75° =- 2 Tc 25°C 1.0 7 5 3 2 0.1 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID – A No.6228–2/4 2SK2627 R DS(on) - VGS 3.0 R DS(on) - Tc 5 Tc=25°C ID=2.5A Static Drain-to-Source On-State Resistance, RDS(on) – Ω Static Drain-to-Source On-State Resistance, RDS(on) – Ω 2.8 2.6 2.4 ID=5.0A 2.2 2.0 1.8 2.5A 1.0A 1.6 1.4 4 3 VG 0V =1 S V 15 2 1 1.2 1.0 0 4 8 12 16 20 0 -60 24 -40 -20 0 V GS(off) - Tc 4 3 2 1 -40 -20 0 20 40 60 80 100 120 140 2 tr 10 7 5 3 2 1.0 3 5 7 5 7 2 10 f=1MHz Ciss Ciss,Coss,Crss – pF 0 0.2 0.4 25°C 0.6 5 3 2 Cos s 100 Crs 7 s 5 3 Tc=- 75°C 25°C Diode Forward Current, IF – A 3 7 2 0.8 1.0 1.2 10 0 1.4 4 8 45 Allowable Power Dissipation, PD – W <1µs 10 µs ID=5A 3 2 10 Operation in this area is limited by RDS(on). 10 0 1m µs s m DC 100 s m op era s tio n Tc=25°C 3 Single pulse 2 2 3 5 7 10 2 3 5 7 100 2 16 20 24 28 32 140 160 PD - Tc A S O IDP=20A 12 Drain-to-Source Voltage, VDS – V 5 Drain Current, ID – A 2 1.0 Ciss,Coss,Crss - VDS Diode Forward Voltage, VSD – V 0.1 7 5 VDD=200V VGS=15V 1000 0.1 7 5 3 2 160 td(on) 2 3 2 1.0 7 5 140 tf 3 I F - VSD 1.0 7 5 10 7 5 120 Drain Current, ID – A 3 2 3 2 100 5 160 10 7 5 3 2 80 td (off) 7 Case Temperature, Tc – ˚C 3 2 60 SW Time - I D 5 0 -60 40 100 VDS=10V ID=1mA Switching Time, SW Time – ns Cutoff Voltage, VGS(off) – V 6 20 Case Temperature, Tc – ˚C Gate-to-Source Voltage, VGS – V 3 Drain-to-Source Voltage, VDS – V 5 7 1000 40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 Case Temperature, Tc – ˚C No.6228–3/4 2SK2627 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2000. Specifications and information herein are subject to change without notice. PS No.6228–4/4