SANYO 2SK2627

Ordering number:ENN6228A
N-Channel Silicon MOSFET
2SK2627
Ultrahigh-Speed Switching Applications
Features
Package Dimensions
· Low ON-resistance.
· Low Qg.
unit:mm
2128
[2SK2627]
0.6
1.0
2.54
1
2
0.7
1.2
4.2
8.4
10.0
0.4
0.2
8.2
7.8
6.2
3
0.3
0.6
1.0
2.54
5.08
6.2
5.2
7.8
1 : Gate
2 : Source
3 : Drain
SANYO : ZP
(Bottom view)
2.5
10.0
6.0
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
Unit
600
V
±30
V
5
A
ID
Drain Current (Pulse)
IDP
PW≤10µs, duty cycle≤1%
20
A
Allowable Power Dissipation
Tc=25°C
40
W
Channel Temperature
PD
Tch
150
˚C
Storage Temperature
Tstg
–55 to +150
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
V(BR)DSS
IDSS
Conditions
ID=1mA, VGS=0
Ratings
min
typ
600
Unit
V
VDS=600V, VGS=0
IGSS
VGS(off)
| yfs |
VGS=±30V, VDS=0
RDS(on)
Ciss
ID=2.5A, VGS=15V
1.5
VDS=10V, ID=1mA
VDS=10V, ID=2.5A
max
3.5
1.5
1.0
mA
±100
nA
5.5
V
2.0
Ω
3.0
S
pF
Coss
VDS=20V, f=1MHz
VDS=20V, f=1MHz
700
Output Capacitance
220
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
110
pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2000TS (KOTO) TA-2882 No.6228–1/4
2SK2627
Continued from preceding page.
Parameter
Symbol
Total Gate Charge
Qg
Turn-ON Delay Time
typ
Unit
max
VDS=200V, VGS=10V, ID=5A
20
nC
See specified Test Circuit
20
ns
tr
See specified Test Circuit
20
ns
td(off)
See specified Test Circuit
50
ns
tf
See specified Test Circuit
25
Fall Time
Diode Forward Voltage
min
td(on)
Rise Time
Turn-OFF Delay Time
Ratings
Conditions
VSD
IS=5A, VGS=0
ns
0.87
1.2
V
Switching Time Test Circuit
VDD=200V
15V
0V
VIN
ID=2.5A
RL=80.0Ω
VIN
D
VOUT
PW=1µs
D.C.≤0.5%
G
2SK2627
P.G
S
RGS=50Ω
I D - VDS
V
15
Drain Current, ID – A
4
I D - VDS
10
10V
15V
8V
10V
8
Drain Current, ID – A
5
3
7V
2
1
8V
6
4
7V
2
VGS=6V
0
0
2
4
6
8
VGS=6V
0
0
10
10
Drain-to-Source Voltage, VDS – V
ID - VGS
Tc=-25°C
Drain Current, ID – A
7
6
25°C
5
75°C
4
3
2
1
0
0
2
4
6
8
10
12
Gate-to-Source Voltage, VGS – V
30
40
50
| yfs | - I D
10
VDS=10V
Forward Transfer Admittance, | yfs | – S
8
20
Drain-to-Source Voltage, VDS – V
14
16
VDS=10V
7
5
3
C
25°
C
75°
=-
2
Tc
25°C
1.0
7
5
3
2
0.1
0.1
2
3
5
7
1.0
2
3
5
7
10
Drain Current, ID – A
No.6228–2/4
2SK2627
R DS(on) - VGS
3.0
R DS(on) - Tc
5
Tc=25°C
ID=2.5A
Static Drain-to-Source
On-State Resistance, RDS(on) – Ω
Static Drain-to-Source
On-State Resistance, RDS(on) – Ω
2.8
2.6
2.4
ID=5.0A
2.2
2.0
1.8
2.5A
1.0A
1.6
1.4
4
3
VG
0V
=1
S
V
15
2
1
1.2
1.0
0
4
8
12
16
20
0
-60
24
-40
-20
0
V GS(off) - Tc
4
3
2
1
-40
-20
0
20
40
60
80
100
120
140
2
tr
10
7
5
3
2
1.0
3
5
7
5
7
2
10
f=1MHz
Ciss
Ciss,Coss,Crss – pF
0
0.2
0.4
25°C
0.6
5
3
2
Cos
s
100
Crs
7
s
5
3
Tc=-
75°C
25°C
Diode Forward Current, IF – A
3
7
2
0.8
1.0
1.2
10
0
1.4
4
8
45
Allowable Power Dissipation, PD – W
<1µs
10
µs
ID=5A
3
2
10
Operation in this area
is limited by RDS(on).
10
0
1m µs
s
m
DC 100 s
m
op
era s
tio
n
Tc=25°C
3 Single pulse
2
2 3
5 7 10
2
3
5
7 100
2
16
20
24
28
32
140
160
PD - Tc
A S O
IDP=20A
12
Drain-to-Source Voltage, VDS – V
5
Drain Current, ID – A
2
1.0
Ciss,Coss,Crss - VDS
Diode Forward Voltage, VSD – V
0.1
7
5
VDD=200V
VGS=15V
1000
0.1
7
5
3
2
160
td(on)
2
3
2
1.0
7
5
140
tf
3
I F - VSD
1.0
7
5
10
7
5
120
Drain Current, ID – A
3
2
3
2
100
5
160
10
7
5
3
2
80
td (off)
7
Case Temperature, Tc – ˚C
3
2
60
SW Time - I D
5
0
-60
40
100
VDS=10V
ID=1mA
Switching Time, SW Time – ns
Cutoff Voltage, VGS(off) – V
6
20
Case Temperature, Tc – ˚C
Gate-to-Source Voltage, VGS – V
3
Drain-to-Source Voltage, VDS – V
5
7 1000
40
35
30
25
20
15
10
5
0
0
20
40
60
80
100
120
Case Temperature, Tc – ˚C
No.6228–3/4
2SK2627
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of November, 2000. Specifications and information herein are subject
to change without notice.
PS No.6228–4/4