Ordering number : ENN6617 2SK2867 N-Channel Silicon MOSFET 2SK2867 Ultrahigh-Speed Switching Applications Features • • Package Dimensions Ultrahigh-speed switching. Low-voltage drive. unit : mm 2091A 0.4 0.16 0 to 0.1 1 : Gate 2 : Source 3 : Drain 0.8 1.1 1 0.95 0.95 2 1.9 2.9 0.5 1.5 2.5 3 0.5 [2SK2867] SANYO : CP Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 450 Gate-to-Source Voltage VGSS ±15 V ID 30 mA Drain Current (DC) Drain Current (Pulse) IDP PD Allowable Power Dissipation V PW≤10µs, duty cycle≤1% 120 mA Tc=25°C 250 mW Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Sourse Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Sourse On-State Resistance V(BR)DSS Conditions Ratings min typ ID=500µA, VGS=0 VDS=450V, VGS=0 VGS=±12V, VDS=0 450 IDSS IGSS VGS(off) yfs VDS=10V, ID=1mA VDS=10V, ID=15mA 1.0 RDS(on)1 RDS(on)2 ID=15mA, VGS=10V ID=15mA, VGS=4V 14 Marking : CK max Unit V 10 µA ±10 µA 2.0 28 V mS 190 250 Ω 210 275 Ω Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 82200 TS IM TA-2985 No.6617-1/4 2SK2867 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss pF Coss VDS=20V, f=1MHz VDS=20V, f=1MHz 20 Output Capacitance 5 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 3 pF Turn-ON Delay Time td(on) See specified Test Circuit 10 ns Rise Time tr td(off) See specified Test Circuit 45 ns See specified Test Circuit 60 ns tf See specified Test Circuit 1 µs Turn-OFF Delay Time Fall Time Diode Forward Voltage VSD IS=30mA, VGS=0 0.79 1.2 V Switching Time Test Circuit VIN VDD=200V 10V 0V ID=15mA RL=13.3kΩ VIN PW=10µs D.C.≤1% VOUT D G 2SK2867 S ID -- VDS 120 5V 4V Drain Current, ID -- mA 100 V =10 V GS 80 3V 60 40 2V 20 0 0 5 10 15 20 25 30 35 40 Drain-to-Source Voltage, VDS -- V 45 50 Zero-Gate Voltage Drain Current, IDS(on) -- mA 50Ω P.G Tc=--25°C VDS=10V 60 25°C 50 75°C 40 30 20 10 0 0 2 4 6 8 10 12 14 16 Gate-to-Source Voltage, VGS -- V IT02049 RDS(on) -- VGS 500 IDS(on) -- VGS 70 18 20 IT02050 RDS(on) -- Tc 500 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Tc=25°C 450 400 350 300 ID=30mA 250 200 15mA 1mA 150 100 400 V 4 S= 300 , VG A 5m =1 ID A, 0V =1 V GS 5m 200 1 I D= 100 50 0 0 2 4 6 8 10 12 14 16 Gate-to-Source Voltage, VGS -- V 18 20 IT02051 0 --50 --25 0 25 50 75 100 Case Temperature, Tc -- °C 125 150 IT02052 No.6617-2/4 2SK2867 VGS(off) -- Tc VDS=10V ID=1mA 5 Ciss, Coss, Crss -- pF 1.0 0.5 3 2 Ciss 10 7 5 Coss 3 Crss 2 1.0 --25 0 25 50 75 100 125 Case Temperature, Tc -- °C 0 150 td (of f) 100 7 5 3 2 tr td(on) 10 7 5 3 2 1.0 2 3 5 7 2 10 3 Drain Current, ID -- mA 5 7 IT02055 PD -- Tc 300 15 20 25 IDP=120mA 100 7 5 3 2 100µs <10µs 1m 10 s ms ID=30mA DC 10 7 5 3 2 1.0 7 5 3 2 30 IT02054 ASO 1000 7 5 3 2 tf 10 Drain-to-Source Voltage, VSD -- V VDD=200V VGS=10V 1000 7 5 3 2 5 IT02053 SW Time -- ID 10000 7 5 3 2 Switching Time, SW Time -- ns f=1MHz 7 1.5 0 --50 Allowable Power Dissipation, PD -- mW Ciss, Coss, Crss -- VDS 100 Drain Current, ID -- mA Gate-to-Source Voltage, VGS -- V 2.0 op era tio Operation in this area is limited by RDS(on). n Tc=25°C Single pulse 0.1 1.0 2 3 5 7 10 2 3 5 7 100 2 Drain-to-Source Voltage, VDS -- V 3 5 7 1000 IT02056 250 200 150 100 50 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT02057 No.6617-3/4 2SK2867 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2000. Specifications and information herein are subject to change without notice. PS No.6617-4/4