AGILENT MSA-0670

Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0670
Features
• Cascadable 50 Ω Gain Block
• Low Operating Voltage:
3.5 V Typical Vd
• 3 dB Bandwidth:
DC to 1.0 GHz
• High Gain:
19.5␣ dB Typical at 0.5 GHz
• Low Noise Figure:
2.8 dB Typical at 0.5 GHz
• Hermetic Gold-ceramic
Microstrip Package
Description
The MSA-0670 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a hermetic,
high reliability package. This
MMIC is designed for use as a
general purpose 50 Ω gain block.
Typical applications include
narrow and broad band IF and RF
amplifiers in industrial and
military applications.
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f MAX,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Typical Biasing Configuration
R bias
VCC > 5 V
RFC (Optional)
4
C block
C block
3
IN
1
2
5965-9586E
OUT
MSA
Vd = 3.5 V
6-374
70 mil Package
MSA-0670 Absolute Maximum Ratings
Parameter
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature
Absolute Maximum[1]
50 mA
200 mW
+13 dBm
200°C
–65 to 200°C
Thermal Resistance[2,4]:
θjc = 130°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 7.7 mW/°C for TC > 174°C.
4. The small spot size of this technique results in a higher, though more
accurate determination of θjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information.
Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions: Id = 16 mA, ZO = 50 Ω
GP
Power Gain (|S21| 2)
f = 0.1 GHz
∆GP
Gain Flatness
f = 0.1 to 0.6 GHz
f3 dB
3 dB Bandwidth
VSWR
Units
Min.
Typ.
Max.
dB
19.0
20.5
22.0
dB
± 0.7
± 1.0
GHz
1.0
Input VSWR
f = 0.1 to 1.5 GHz
1.9:1
Output VSWR
f = 0.1 to 1.5 GHz
1.8:1
NF
50 Ω Noise Figure
f = 0.5 GHz
dB
2.8
P1 dB
Output Power at 1 dB Gain Compression
f = 0.5 GHz
dBm
2.0
IP3
Third Order Intercept Point
f = 0.5 GHz
dBm
14.5
tD
Group Delay
f = 0.5 GHz
psec
200
Vd
Device Voltage
dV/dT
Device Voltage Temperature Coefficient
V
mV/°C
3.1
3.5
4.0
3.9
–8.0
Note:
1. The recommended operating current range for this device is 12 to 30 mA. Typical performance as a function of current
is on the following page.
6-375
MSA-0670 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 16 mA)
S11
S21
S12
S22
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
k
0.1
0.2
0.3
0.4
0.5
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
.05
.07
.09
.11
.13
.15
.19
.24
.31
.38
.42
.46
.48
.48
.48
.48
–147
–134
–126
–123
–123
–123
–126
–129
–141
–157
–167
178
173
164
155
143
20.5
20.4
20.1
19.9
19.6
19.2
17.4
16.5
15.2
13.0
11.1
9.5
7.9
6.6
5.5
4.5
10.62
10.41
10.16
9.85
9.50
9.09
8.28
7.46
5.76
4.47
3.59
2.97
2.49
2.13
1.87
1.67
172
164
156
148
141
135
122
110
87
68
57
45
33
22
13
3
–23.3
–23.0
–22.6
–22.4
–22.0
–21.3
–20.7
–19.8
–18.2
–17.2
–16.7
–16.4
–16.2
–16.1
–15.9
–15.8
.068
.070
.074
.076
.079
.082
.093
.103
.124
.138
.146
.152
.155
.156
.161
.163
4
8
12
14
26
18
22
22
23
19
20
16
11
9
5
3
.05
.09
.13
.16
.20
.22
.25
.27
.27
.24
.21
.17
.14
.11
.11
.14
–69
–92
–104
–113
–121
–128
–141
–154
–176
166
158
156
163
–175
–154
–141
1.05
1.04
1.02
1.00
0.99
0.97
0.94
0.92
0.91
0.94
1.01
1.07
1.15
1.27
1.35
1.46
Note:
1. A model for this device is available in the DEVICE MODELS section.
Typical Performance, TA = 25°C
(unless otherwise noted)
21
25
25
TC = +125°C
TC = +25°C
20 TC = –55°C
Gain Flat to DC
18
0.1 GHz
0.5 GHz
20
1.0 GHz
9
15
G p (dB)
12
Id (mA)
G p (dB)
15
10
15
2.0 GHz
10
6
5
5
3
0
0
0.1
0.3 0.5
1.0
3.0
6.0
0
0
1
2
20
25
30
Figure 2. Device Current vs. Voltage.
Figure 3. Power Gain vs. Current.
4.0
I d = 30 mA
19
8
GP
5
4
NF
4
3
P1 dB
3
2
2
1
1
0
+25
+85
+125
NF (dB)
5
4
3.5
NF (dB)
18
P1 dB (dBm)
Gp (dB)
15
I d (mA)
20
17
P1 dB (dBm)
10
5
12
21
0
–55 –25
4
Vd (V)
FREQUENCY (GHz)
Figure 1. Typical Power Gain vs.
Frequency, TA = 25°C, Id = 16 mA.
3
I d = 20 mA
I d = 16 mA
3.0
2.5
0
I d = 12 mA
I d = 16 mA, 30 mA
I d = 20 mA
I d = 12 mA
-4
0.1
2.0
0.2 0.3
0.5
1.0
2.0
4.0
0.1
0.2 0.3
0.5
1.0
2.0
4.0
TEMPERATURE (°C)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 0.5 GHz,
Id=16mA.
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
6-376
70 mil Package Dimensions
.040
1.02
4
GROUND
.020
.508
RF OUTPUT
AND BIAS
RF INPUT
3
1
2
.004 ± .002
.10 ± .05
GROUND
.070
1.70
.495 ± .030
12.57 ± .76
Notes:
(unless otherwise specified)
1. Dimensions are in
mm
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
.035
.89
6-377