MSA-0520 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet Description Features The MSA-0520 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic, BeO disk package for good thermal characteristics. This MMIC is designed for use as a general purpose 50Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. • Cascadable 50 Ω Gain Block The MSA-series is fabricated using Avago’s 10 GHz fT, 25 GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. • Hermetic Metal/Beryllia Microstrip Package 200 mil BeO Package Typical Biasing Configuration • High Output Power: +23 dBm Typical P1 dB at 1.0 GHz • Low Distortion: 33 dBm Typical IP3 at 1.0 GHz • 8.5 dB Typical Gain at 1.0 GHz R bias VCC > 15 V RFC (Optional) 4 C block IN C block 3 1 OUT MSA 2 Vd = 12 V MSA-0520 Absolute Maximum Ratings Parameter Absolute Maximum[1] Device Current225 mA Power Dissipation[2,3] 3.0 W RF Input Power +25 dBm Junction Temperature200°C Storage Temperature –65 to 200°C Thermal Resistance[2,4]: θjc = 25°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 40 mW/°C for TC > 125°C. 4. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. Electrical Specifications[1], TA = 25°C Symbol Parameters and Test Conditions: Id = 165 mA, ZO = 50 Ω Units P1 dB Output Power at 1 dB Gain Compression f = 1.0 GHz dBm21.023.0 GP Power Gain (|S21| 2) f = 0.1 GHz ∆GP Gain Flatness f = 0.1 to 2.0 GHz f3 dB 3 dB Bandwidth[2] VSWR Input VSWR f = 0.1 to 2.0 GHz2.0:1 Output VSWR f = 0.1 to 2.0 GHz2.5:1 IP3 Third Order Intercept Point f = 1.0 GHz dBm 33.0 NF50 Ω 50 Ω Noise Figure f = 1.0 GHz dB 6.5 tD Group Delay f = 1.0 GHz psec Vd Device Voltage dV/dT Device Voltage Temperature Coefficient Notes: 1. The recommended operating current range for this device is 80 to 200 mA. Typical performance as a function of current is on the following page. 2. Referenced from 0.1 GHz Gain (GP). dB Min. 7.5 dB Typ. 8.5 Max. 9.5 ±0.75 GHz2.8 V 10.5 mV/°C 170 12.0 –16.0 13.5 MSA-0520 Typical Scattering Parameters (TA = 25°C, Id = 165 mA) Freq. MHz 5 25 50 100 200 400 600 800 1000 1500 2000 2500 3000 3500 4000 Mag S11 .57 .25 .15 .11 .10 .10 .11 .13 .15 .22 .30 .37 .41 .45 .46 Ang dB S21 Mag Ang dB S12 Mag Ang Mag –38 –90 –111 –138 –152 –152 –147 –142 –140 –142 –156 –170 170 149 124 14.4 5.25 10.7 3.42 9.52.97 8.92.80 8.82.75 8.72.72 8.62.70 8.52.67 8.42.64 8.02.52 7.42.36 6.72.16 5.6 1.91 4.5 1.68 3.3 1.45 165 160 163 166 163 152 140 128 115 85 55 33 8 –16 –40 –19.4 –14.9 –14.4 –14.2 –14.1 –14.1 –14.0 –14.1 –14.1 –13.7 –13.3 –12.9 –12.7 –12.1 –11.7 .107 .180 .190 .195 .197 .198 .199 .199 .198 .206 .216 .227 .232 .249 .259 38 17 9 3 1 –2 –4 –6 –8 –12 –16 –18 –23 –31 –39 .67 .29 .18 .11 .10 .14 .18 .22 .27 .34 .43 .48 .51 .55 .56 S22 Ang k –35 –81 –97 –113 –125 –123 –123 –127 –131 –143 –158 –166 –177 173 162 0.57 0.93 1.10 1.16 1.17 1.16 1.14 1.12 1.09 0.98 0.85 0.75 0.70 0.63 0.66 Typical Performance, TA = 25°C (unless otherwise noted) 8 150 6 Id (mA) GAIN (dB) 0.1 GHz 0.5 GHz 1.0 GHz 2.0 GHz 1.5 GHz 4 16 18 20 22 24 26 28 0 3 6 Figure 1. Typical Gain vs. Power Out, TA = 25°C, Id = 165 mA. 9 12 P1 dB 20 16 80 15 120 200 Figure 3. Output Power at 1 dB Gain Compression, Third Order Intercept vs. Current, f = 1.0 GHz. 10 26 160 Id (mA) Figure 2. Device Current vs. Voltage. 28 4 8 3 0.5 GHz Output 6 VSWR 1.0 GHz 22 Gp (dB) P1 dB (dBm) 28 Vd (V) POWER OUT (dBm) 24 IP3 24 0 30 32 100 50 2 0 14 36 TC = +100C TC = +25C TC = –50C IP3 (dBm) 200 P1 dB (dBm) 10 4 2 20 18 2.0 GHz Input 1 Id = 200 mA 2 Id = 165 mA Id = 80 mA 16 -50 +25 +100 CASE TEMPERATURE (C) Figure 4. Output Power @ 1 dB Gain Compression vs. Temperature, Id = 165 mA. 0 0.1 0.2 0.3 0.5 1.0 FREQUENCY (GHz) Figure 5. Gain vs. Frequency. 2.0 4.0 0.1 0.2 0.3 0.5 1.0 FREQUENCY, (GHz) Figure 6. VSWR vs. Frequency, Id = 165 mA. 2.0 4.0 Ordering Information Part Numbers MSA-0520 No. of Devices 100 Comments Bulk 200 mil BeO Package Dimensions 4 GROUND .300 ± .025 7.62 ± .64 45° .030 .76 3 1 RF INPUT NO REFERENCE GROUND 2 .060 1.52 .048 ± .010 1.21 ± .25 .128 3.25 .205 5.21 RF OUTPUT AND BIAS Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = ± 0.005 mm .xx = ± 0.13 3. Base of package is electrically isolated. .004 ± .002 .10 ± .05 .023 .57 For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright © 2008 Avago Technologies, Limited. All rights reserved. Obsoletes 5989-2755EN AV02-1228EN May 14, 2008