MSA-0470 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet Description Features The MSA-0470 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic, high reliability package. This MMIC is designed for use as a general purpose 50Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. • Cascadable 50Ω Gain Block 70 mil Package Typical Biasing Configuration • 3 dB Bandwidth: DC to 4.0 GHz • 12.5 dBm Typical P1 dB at 1.0 GHz • 8.5 dB Typical Gain at 1.0 GHz • Unconditionally Stable (k>1) The MSA-series is fabricated using Avago’s 10 GHz fT, • Hermetic Gold-ceramic Microstrip Package 25 GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. Rbias VCC > 7 V RFC (Optional) 4 Cblock IN 3 1 Cblock OUT MSA 2 Vd = 5.25 V MSA-0470 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 100 mA 650 mW +13 dBm 200°C –65 to 200°C Thermal Resistance[2,4]: θjc = 115°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 8.7 mW/°C for TC > 125°C. 4. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. Electrical Specifications[1], TA = 25°C Symbol GP ∆GP f3 dB VSWR NF P1 dB IP3 tD Vd dV/dT Parameters and Test Conditions: Id = 50 mA, ZO = 50 Ω Min. Typ. Max. Power Gain (|S21 f = 0.1 GHz dB 7.5 Gain Flatness f = 0.1 to 2.5 GHz dB 3 dB Bandwidth GHz Input VSWR f = 0.1 to 2.5 GHz Output VSWR f = 0.1 to 2.5 GHz 50 Ω Noise Figure f = 1.0 GHz dB Output Power at 1 dB Gain Compression f = 1.0 GHz dBm Third Order Intercept Point f = 1.0 GHz dBm Group Delay f = 1.0 GHz psec Device Voltage V 4.75 Device Voltage Temperature Coefficient mV/°C 8.5 ±0.6 4.0 1.7:1 2.0:1 6.5 12.5 25.5 125 5.25 –8.0 9.5 ±1.0 | 2) Note: 1. The recommended operating current range for this device is 30 to 70 mA. Typical performance as a function of current is on the following page. Units 5.75 MSA-0470 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 50 mA) Freq. GHz Mag 0.1 0.2 0.4 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 .18 .18 .18 .17 .16 .16 .16 .21 .26 .32 .37 .40 .41 .42 S11 Ang dB S21 Mag Ang dB 179 179 179 –179 –176 –174 –166 –163 –162 –170 –177 175 166 155 8.5 8.5 8.5 8.5 8.4 8.3 8.2 7.8 7.3 6.5 5.7 4.7 3.9 3.1 2.67 2.67 2.67 2.65 2.64 2.61 2.56 2.46 2.33 2.12 1.93 1.73 1.57 1.44 176 172 163 155 147 138 117 97 83 65 38 33 20 7 –16.4 –16.4 –16.4 –16.2 –16.1 –15.9 –15.5 –14.6 –13.8 –13.5 –13.2 –12.6 –12.4 –11.9 S12 Mag Ang Mag .151 .151 .152 .155 .158 .161 .169 .186 .204 .212 .220 .234 .239 .255 .10 .10 .13 .16 .19 .22 .29 .33 .36 .40 .40 .40 .39 .37 1 2 3 5 8 6 9 9 12 10 7 3 –1 –6 S22 –14 –30 –50 –67 –79 –90 –111 –131 –142 –156 –164 –170 –173 –176 Typical Performance, TA = 25°C (unless otherwise noted) 12 80 TC = +125C TC = +25C TC = –55C 10 Gain Flat to DC Id (mA) Gp (dB) 60 8 6 40 4 20 2 0 0.1 0.3 0.5 1.0 3.0 0 6.0 1 2 FREQUENCY (GHz) 4 5 6 7 Vd (V) Figure1.TypicalPowerGainvs.Frequency,TA=25°C,Id=50mA. Figure2.DeviceCurrentvs.Voltage. 13 P1 dB (dBm) 9 8 12 P1 dB 11 10 7 9 0.1 GHz 1.0 GHz 2.0 GHz 5 4 20 30 40 50 60 8 5 –55 Id (mA) Figure3.PowerGainvs.Current. 21 18 NF –25 +25 6 +85 5 +125 TEMPERATURE (C) Figure4.OutputPowerat1dBGainCompression,NFand PowerGainvs.CaseTemperature,f=1.0GHz,Id = 50 mA. 7.5 Id = 70 mA 7 7 6 70 8 GP 7.0 NF (dB) 6 Gp (dB) Gp (dB) 3 Ang 2.0 GHz 4 20 30 40 50 60 5 –55 70 –25 +25 Id (mA) Figure3.PowerGainvs.Current. Figure4.OutputPowerat1dBGainCompression,NFand PowerGainvs.CaseTemperature,f=1.0GHz,Id = 50 mA. 21 7.5 18 Id = 70 mA 7.0 NF (dB) 15 12 Id = 50 mA 6.5 9 6.0 Id = 30 mA 6 Id = 30 mA Id = 50 mA 3 0.1 5.5 0.2 0.3 0.5 1.0 2.0 4.0 Id = 70 mA 0.1 0.2 0.3 0.5 Figure5.OutputPowerat1dBGainCompressionvs.Frequency. Figure6.NoiseFigurevs.Frequency. Ordering Information No. of Devices 100 Comments Bulk 70 mil Package Dimensions .040 1.02 4 GROUND .020 .508 RF OUTPUT AND BIAS RF INPUT 3 1 2 .004 ± .002 .10 ± .05 GROUND .070 1.78 .495 ± .030 12.57 ± .76 1.0 FREQUENCY (GHz) FREQUENCY (GHz) Part Numbers MSA-0470 5 +125 TEMPERATURE (C) Typical Performance, TA = 25°C (unless otherwise noted) P1 dB (dBm) +85 Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = ± 0.005 mm .xx = ± 0.13 .035 .89 For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright © 2008 Avago Technologies, Limited. All rights reserved. Obsoletes 5989-2764EN AV02-1226EN - May 14, 2008 2.0