AGILENT MSA-1104

Cascadable Silicon Bipolar
MMIC Amplifier
Technical Data
MSA-1104
Features
• High Dynamic Range
Cascadable 50 Ω or 75 Ω
Gain Block
• 3 dB Bandwidth:
50 MHz to 1.3 GHz
• 17.5 dBm Typical P1 dB at
0.5 GHz
• 12 dB Typical 50 Ω Gain at
0.5 GHz
• 3.6 dB Typical Noise Figure
at 0.5 GHz
• Low Cost Plastic Package
Description
The MSA-1104 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost
plastic package. This MMIC is
designed for high dynamic range
in either 50 or 75 Ω systems by
combining low noise figure with
high IP3. Typical applications
include narrow and broadband
linear amplifiers in commercial
and industrial systems.
The MSA-series is fabricated using
Agilent’s 10 GHz fT, 25 GHz fMAX
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Typical Biasing Configuration
R bias
VCC > 8 V
RFC (Optional)
4
C block
C block
3
IN
1
OUT
MSA
2
Vd = 5.5 V
04A Plastic Package
2
MSA-1104 Absolute Maximum Ratings
Absolute Maximum[1]
80 mA
550 mW
+1 dBm
150°C
–65 to 150°C
Parameter
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature
Thermal Resistance[2,4]:
θjc = 115°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 8.7 mW/°C for TC > 87°C.
4. See MEASUREMENTS section “Thermal Resistance” for more information.
Electrical Specifications[1], TA = 25°C
Symbol
GP
Parameters and Test Conditions: Id = 60 mA, ZO = 50 Ω
Power Gain (|S21
| 2)
∆GP
Gain Flatness
f3 dB
3 dB Bandwidth[2]
VSWR
f = 0.05 GHz
f = 0.5 GHz
f = 1.0 GHz
f = 0.1 to 1.0 GHz
Units
Min.
Typ.
dB
dB
dB
10.0
12.7
12.0
10.5
dB
±1.0
GHz
1.3
Input VSWR
f = 0.1 to 1.0 GHz
1.5:1
Output VSWR
f = 0.1 to 1.0 GHz
1.7:1
NF
50 Ω Noise Figure
f = 0.5 GHz
dB
3.6
P1 dB
Output Power at 1 dB Gain Compression
f = 0.5 GHz
dBm
17.5
IP3
Third Order Intercept Point
f = 0.5 GHz
dBm
30
tD
Group Delay
f = 0.5 GHz
psec
200
Vd
Device Voltage
dV/dT
Device Voltage Temperature Coefficient
V
mV/°C
4.4
5.5
Max.
6.6
–8.0
Notes:
1. The recommended operating current range for this device is 40 to 70 mA. Typical performance as a function of current
is on the following page.
2. Referenced from 50 MHz gain (G P).
3
MSA-1104 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 60 mA)
S11
Freq.
GHz
.0005
.005
.025
.050
.100
.200
.300
.400
.500
.600
.700
.800
.900
1.000
1.500
2.000
2.500
3.000
S21
S12
S22
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
k
.76
.20
.05
.04
.04
.04
.06
.07
.09
.11
.13
.15
.16
.18
.28
.37
.45
.52
–22
–79
–78
–75
–81
–93
–105
–115
–124
–132
–140
–147
–154
–161
171
149
133
118
19.3
13.7
12.8
12.7
12.6
12.6
12.4
12.3
12.1
11.8
11.6
11.3
11.0
10.7
9.1
7.6
6.1
4.6
9.19
4.83
4.35
4.31
4.29
4.24
4.18
4.11
4.01
3.91
3.80
3.68
3.56
3.43
2.85
2.39
2.02
1.69
167
164
174
174
171
164
156
148
141
134
126
120
113
106
77
52
33
14
–24.4
–16.5
–16.2
–16.4
–16.4
–16.3
–16.2
–16.0
–15.8
–15.6
–15.4
–15.2
–14.9
–14.7
–13.5
–13.0
–12.7
–12.6
.060
.149
.154
.151
.152
.153
.155
.158
.162
.166
.170
.174
.180
.184
.211
.224
.231
.234
54
12
2
2
2
3
4
5
6
7
7
7
7
6
2
–5
–10
–16
.77
.21
.06
.05
.05
.07
.10
.12
.15
.17
.19
.22
.24
.26
.35
.43
.47
.50
–22
–83
–101
–136
–137
–135
–136
–139
–144
–150
–156
–161
–168
–173
163
140
125
112
0.48
0.96
1.07
1.09
1.09
1.09
1.08
1.07
1.06
1.06
1.05
1.04
1.03
1.03
0.99
0.99
1.02
1.05
A model for this device is available in the DEVICE MODELS section.
Typical Performance, TA = 25°C, ZO = 50 Ω
(unless otherwise noted)
100
16
ZO = 50 Ω
0.1 GHz
0.5 GHz
1.0 GHz,
12
1.0 GHz
10
60
ZO = 75 Ω
8
Gp (dB)
10
Id (mA)
G p (dB)
12
14
TC = +85°C
TC = +25°C
80 T = –25°C
C
14
40
6
8
2.0 GHz
4
6
20
2
0
.02
0
.05
0.1
0.5 1.0
2.0 3.0
4
0
2
4
20
20
12
GP
11
5
P1 dB (dBm)
13
Gp (dB)
P1 dB
18
NF
3
–25
+25
+85
I d = 70 mA
5.0
I d = 60 mA
4.5
4.0
16
14
80
5.5
NF (dB)
17
4
60
Figure 3. Power Gain vs. Current.
22
18
16
40
I d (mA)
Figure 2. Device Current vs. Voltage.
Figure 1. Typical Power Gain vs.
Frequency, Id = 60 mA.
P1 dB (dBm)
8
Vd (V)
FREQUENCY (GHz)
NF (dB)
6
12
0.1
0.2 0.3
I d = 70 mA
I d = 60 mA
I d = 40 mA
3.5
I d = 40 mA
0.5
1.0
2.0
3.0
0.1
0.2 0.3
0.5
1.0
2.0
TEMPERATURE (°C)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression, Noise Figure and Power
Gain vs. Case Temperature,
f = 0.5 GHz, Id = 60 mA.
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
04A Plastic Package Dimensions
12.39 ± 0.76
(0.488 ± 0.030)
4
GROUND
0.76 (0.030)
DIA.
RF INPUT
RF OUTPUT
& BIAS
A1
0.76 (0.030)
1
3
4.29
(0.169)
0.96 (0.038)
2
GROUND
0.51
(0.020)
NOTES:
(UNLESS OTHERWISE SPECIFIED)
1. DIMENSIONS ARE IN
MILLIMETERS (INCHES)
2. TOLERANCES
mm .XX = ± 0.13
in .XXX = ± 0.005
0.20 ± 0.050
(0.008 ± 0.002)
2.54 ± 0.25
(0.100 ± 0.010)
3.68
(0.145)
DIMENSIONS ARE IN MILLIMETERS (INCHES).
www.semiconductor.agilent.com
Data subject to change.
Copyright © 1999 Agilent Technologies
5965-9556E (11/99)