Order this document by MRF326/D SEMICONDUCTOR TECHNICAL DATA The RF Line . . . designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 40 Watts Minimum Gain = 9.0 dB 40 W, 225 to 400 MHz CONTROLLED “Q” BROADBAND RF POWER TRANSISTOR NPN SILICON • Built–In Matching Network for Broadband Operation • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR • Gold Metallization System for High Reliability Applications MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 33 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 4.0 Vdc Collector Current — Continuous Collector Current — Peak IC 4.5 6.0 Adc Total Device Dissipation @ TC = 25°C (1) Derate above 25°C PD 110 0.63 Watts W/°C Storage Temperature Range Tstg – 65 to +150 °C CASE 316–01, STYLE 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RθJC 1.6 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 40 mAdc, IB = 0) V(BR)CEO 33 — — Vdc Collector–Emitter Breakdown Voltage (IC = 40 mAdc, VBE = 0) V(BR)CES 60 — — Vdc Emitter–Base Breakdown Voltage (IE = 4.0 mAdc, IC = 0) V(BR)EBO 4.0 — — Vdc Collector–Base Breakdown Voltage (IC = 40 mAdc, IE = 0) V(BR)CBO 60 — — Vdc ICBO — — 4.0 mAdc hFE 20 50 80 — Cob — 45 60 pF Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCB = 30 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = 2.0 Adc, VCE = 5.0 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) NOTE: (continued) 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. RF DEVICE DATA MOTOROLA Motorola, Inc. 1994 MRF326 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Common–Emitter Amplifier Power Gain (VCC = 28 Vdc, Pout = 40 W, f = 400 MHz, IC Max = 2.85 Adc) GPE 9.0 11 — dB Collector Efficiency (VCC = 28 Vdc, Pout = 40 W, f = 400 MHz, IC Max = 2.85 Adc) η 50 — — % Load Mismatch (VCC = 28 Vdc, Pout = 40 W CW, f = 400 MHz, VSWR = 30:1 All Phase Angles) ψ FUNCTIONAL TESTS (Figure 1) No Degradation in Output Power R1 C9 L2 R3 C7 Z3 DUT Z2 C2 Z4 RF OUTPUT L4 R2 C1 + 28 Vdc – L3 L1 Z1 + C10 C13 RF INPUT C11 L5 C3 C6 C8 C5 C4 C12 C1 — 1.0 – 10 pF Johanson, Capacitor (JMC 5201) C2, C3, C6, C8 — 1.0– 20 pF Johanson Capacitor C4, C5 — 36 pF ATC “B” Style Chip Capacitor C7, C9, C13 — 100 pF UNELCO Capacitor C11 — 680 pF Feedthru C10 — 1.0 µF 50 V Tantalum C12 — 0.1 µF Erie Redcap L1 — 8 Turns #26 AWG Enameled, 1/16″ ID Closewound L2, L5 — Ferroxcube VK200–19/4B Ferrite Choke L3 — 8 Turns #20 AWG Enameled, 1/4″ ID Closewound L4 — 4 Turns #26 AWG 0.1″ ID R1 — 10 Ohm 2.0 W Carbon R2, R3 — 10 Ohm 1.0 W Carbon Z1 — Microstrip 0.19″ W x 1.28″ L Z2 — Microstrip 0.28″ W x 1.0″ L Z3 — Microstrip 0.31″ W x 1.0″ L Z4 — Microstrip 0.31″ W x 0.9″ L Board — Glass Teflon εr = 2.56 t = 0.062″ Input/Output Connectors — Type N UG58 A/U Figure 1. 400 MHz Test Amplifier MRF326 2 MOTOROLA RF DEVICE DATA 50 f = 225 MHz 40 400 MHz Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 50 30 20 10 40 Pin = 3.8 W 2.6 W 30 1.8 W 20 10 VCC = 28 V 0 0 1 2 3 4 f = 225 MHz 5 0 10 14 18 22 26 30 VCC, SUPPLY VOLTAGE (VOLTS) Pin, INPUT POWER (WATTS) Figure 2. Output Power versus Input Power Figure 3. Output Power versus Supply Voltage Pout , OUTPUT POWER (WATTS) 50 Pin = 4.3 W 40 2.8 W 30 2W 20 10 0 10 14 18 22 26 30 VCC, SUPPLY VOLTAGE (VOLTS) Figure 4. Output Power versus Supply Voltage f = 400 MHz MOTOROLA RF DEVICE DATA MRF326 3 0 5 f = 225 MHz 5 400 10 f = 225 MHz ZOL* 10 Zin 350 400 5 350 10 15 VCC = 28 V, Po = 40 W f MHz Zin Ohms ZOL* Ohms 225 350 400 0.75 + j2.3 4.6 + j2.1 1.3 + j0.9 3.5 – j2.3 3.2 – j0.8 3.7 + j0 20 25 30 ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, ZOL* = voltage and frequency. Figure 5. Series Equivalent Input–Output Impedance MRF326 4 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS F D 4 R NOTES: 1. FLANGE IS ISOLATED IN ALL STYLES. K 3 DIM A B C D E F H J K L N Q R U 1 Q 2 L B J C E N INCHES MIN MAX 24.38 25.14 12.45 12.95 5.97 7.62 5.33 5.58 2.16 3.04 5.08 5.33 18.29 18.54 0.10 0.15 10.29 11.17 3.81 4.06 3.81 4.31 2.92 3.30 3.05 3.30 11.94 12.57 MILLIMETERS MIN MAX 0.960 0.990 0.490 0.510 0.235 0.300 0.210 0.220 0.085 0.120 0.200 0.210 0.720 0.730 0.004 0.006 0.405 0.440 0.150 0.160 0.150 0.170 0.115 0.130 0.120 0.130 0.470 0.495 H A U STYLE 1: PIN 1. 2. 3. 4. EMITTER COLLECTOR EMITTER BASE CASE 316–01 ISSUE D MOTOROLA RF DEVICE DATA MRF326 5 Motorola reserves the right to make changes without further notice to any products herein. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. MRF326 6 ◊ *MRF326/D* MRF326/D MOTOROLA RF DEVICE DATA