Order this document by MRF1015MA/D SEMICONDUCTOR TECHNICAL DATA The RF Line . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 15 Watts Peak Minimum Gain = 10 dB 15 W (PEAK), 960 – 1215 MHz MICROWAVE POWER TRANSISTORS NPN SILICON • 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR • Industry Standard Package • Nitride Passivated • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration • Internal Input Matching for Broadband Operation • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCES 60 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 4.0 Vdc Collector Current — Continuous IC 1.0 Adc Total Device Dissipation @ TC = 25°C (1) Derate above 25°C PD 17.5 100 Watts mW/°C Storage Temperature Range Tstg – 65 to +150 °C Characteristic Symbol Max Unit Thermal Resistance, Junction to Case (2) RθJC 10 °C/W CASE 332–04, STYLE 1 MRF1015MA THERMAL CHARACTERISTICS CASE 332A–03, STYLE 1 MRF1015MB ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 10 mAdc, VBE = 0) V(BR)CES 60 — — Vdc Collector–Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 60 — — Vdc Emitter–Base Breakdown Voltage (IE = 1.0 mAdc, IC = 0) V(BR)EBO 4.0 — — Vdc ICBO — — 1.0 mAdc hFE 10 40 100 — OFF CHARACTERISTICS Collector Cutoff Current (VCB = 50 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = 250 mAdc, VCE = 5.0 Vdc) NOTES: (continued) 1. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers. 2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. REV 6 RF DEVICE DATA MOTOROLA Motorola, Inc. 1994 MRF1015MA MRF1015MB 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Cob — 5.0 7.5 pF Common–Base Amplifier Power Gain (VCC = 50 Vdc, Pout = 15 W Peak, f = 1090 MHz) GPB 10 12.5 — dB Collector Efficiency (VCC = 50 Vdc, Pout = 15 W Peak, f = 1090 MHz) η 30 35 — % Load Mismatch (VCC = 50 Vdc, Pout = 15 W Peak, f = 1090 MHz, VSWR = 10:1 All Phase Angles) ψ DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 50 Vdc, IE = 0, f = 1.0 MHz) FUNCTIONAL TESTS (Pulse Width = 10 µs, Duty Cycle = 1.0%) No Degradation in Power Output + – + C2 C4 L2 L1 RF INPUT C3 RF OUTPUT DUT C1 Z1 Z2 50 Vdc Z3 Z4 Z5 Z6 Z7 Z8 C1, C2 — 220 pF 100 mil Chip Capacitor C3 — 0.1 µF C4 — 47 µF/75 V Electrolytic Capacitor L1, L2 — 3 Turns #18 AWG, 1/8″ ID Z1–Z8 — Microstrip, See Photomaster Board Material — 0.032″ Glass Teflon Board Material — εr = 2.5 Figure 1. 1090 MHz Test Circuit MRF1015MA MRF1015MB 2 MOTOROLA RF DEVICE DATA 18 15 Pout , OUTPUT POWER (WATTS pk) Pout , OUTPUT POWER (WATTS pk) 18 f = 960 MHz 1090 MHz 12 1215 MHz 9 VCC = 50 V tP = 10 µs D = 1% 6 3 0 0.3 0.6 0.9 Pin, INPUT POWER (WATTS pk) 1.2 Pin = 1.2 W pk 15 12 0.75 W pk 9 3 1.5 960 12 0.75 W pk 0.6 W pk 6 3 Pout = 15 W pk VCC = 50 V tP = 10 µs D = 1% 14 0.85 W pk 9 1215 15 G PB , POWER GAIN (dB) Pout , OUTPUT POWER (WATTS pk) 15 1090 f, FREQUENCY (MHz) Figure 3. Output Power versus Frequency Pin = 1.2 W pk tP = 10 µs D = 1% f = 1090 MHz 0.6 W pk VCC = 50 V tP = 10 µs D = 1% 6 Figure 2. Output Power versus Input Power 18 1 W pk 0.85 W pk 13 12 11 10 0 5 10 15 20 25 30 35 VCC, SUPPLY VOLTAGE (VOLTS) 40 45 50 960 Figure 4. Output Power versus Supply Voltage 0 – j5.0 1090 f, FREQUENCY (MHz) Figure 5. Power Gain versus Frequency + j5.0 – j10 Pout = 15 W pk VCC = 50 V tp = 10 µs D = 1% + j10 – j15 + j15 5.0 1090 10 Zin ZOL* 1215 15 1090 1215 1215 f = 960 MHz f MHz Zin Ohms ZOL* Ohms 960 1090 1215 5.9 + j13.6 5.5 + j11.5 4.0 + j12.5 12.5 – j15 12.4 – j12.8 12.1 – j10 ZOL* = Conjugate of the optimum load ZOL* = impedance into which the device ZOL* = output operates at a given output ZOL* = power, voltage, and frequency. f = 960 MHz 20 Coordinates in Ohms Figure 6. Series Equivalent Input/Output Impedances MOTOROLA RF DEVICE DATA MRF1015MA MRF1015MB 3 PACKAGE DIMENSIONS L NOTES: 1. DIMENSION K APPLIES TWO PLACES. 2. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1973. M 4 K 1 D 3 DIM A B C D E F H J K L M N U 2 A N J H F –T– C U SEATING PLANE 8–32 UNC 2A E –B– 0.76 (0.030) M T B M STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 6.86 7.62 6.10 6.60 16.26 16.76 4.95 5.21 1.40 1.65 2.67 4.32 1.40 1.65 0.08 0.18 15.24 ––– 2.41 2.67 45 _NOM 4.97 6.22 2.92 3.68 INCHES MIN MAX 0.270 0.300 0.240 0.260 0.640 0.660 0.195 0.205 0.055 0.065 0.105 0.170 0.055 0.065 0.003 0.007 0.600 ––– 0.095 0.105 45 _NOM 0.180 0.245 0.115 0.145 BASE EMITTER BASE COLLECTOR CASE 332–04 ISSUE D MRF1015MA F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 1 K D 3 2 A H STYLE 1: PIN 1. 2. 3. 4. J BASE EMITTER BASE COLLECTOR DIM A C D F H J K INCHES MIN MAX 0.270 0.290 0.115 0.135 0.195 0.205 0.095 0.105 0.050 0.070 0.003 0.007 0.600 ––– MILLIMETERS MIN MAX 6.86 7.36 2.93 3.42 4.96 5.20 2.42 2.66 1.27 1.77 0.08 0.17 15.24 ––– C SEATING PLANE CASE 332A–03 ISSUE D MRF1015MB Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. 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Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. MRF1015MA MRF1015MB 4 ◊ *MRF1015MA/D* MRF1015MA/D MOTOROLA RF DEVICE DATA