Order this document by MRF898/D SEMICONDUCTOR TECHNICAL DATA The RF Line . . . designed for 24 Volt UHF large–signal, common base amplifier applications in industrial and commercial FM equipment operating in the range of 850 – 960 MHz. • Motorola Advanced Amplifier Concept Package 60 W, 850 – 960 MHz RF POWER TRANSISTOR NPN SILICON • Specified 24 Volt, 900 MHz Characteristics Output Power = 60 Watts Power Gain = 7.0 dB Min Efficiency = 60% Min • Double Input/Output Matched for Wideband Performance and Simplified External Matching • Series Equivalent Large–Signal Characterization • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration • Silicon Nitride Passivated • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. CASE 333A–02, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 30 Vdc Collector–Base Voltage VCBO 55 Vdc Emitter–Base Voltage VEBO 4.0 Vdc Collector Current — Continuous IC 10 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 175 1.0 Watts W/°C Storage Temperature Range Tstg – 65 to +150 °C Symbol Max Unit RθJC 1.0 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) V(BR)CEO 30 — — Vdc Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) V(BR)CES 55 — — Vdc Emitter–Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) V(BR)EBO 4.0 — — Vdc ICES — — 10 mAdc Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCE = 30 Vdc, VBE = 0, TC = 25°C) (continued) REV 6 RF DEVICE DATA MOTOROLA Motorola, Inc. 1994 MRF898 39 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit hFE 20 50 150 — Cob — 60 — pF Common–Base Amplifier Power Gain (VCC = 24 Vdc, Pout = 60 W, f = 900 MHz) Gpb 7.0 7.9 — dB Collector Efficiency (VCC = 24 Vdc, Pout = 60 W, f = 900 MHz) η 60 65 — % Output Mismatch Stress (VCC = 24 Vdc, Pout = 60 W, f = 900 MHz, VSWR = 5:1, all phase angles) ψ ON CHARACTERISTICS DC Current Gain (IC = 2.0 Adc, VCE = 5.0 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance (1) (VCB = 24 Vdc, IE = 0, f = 1.0 MHz) FUNCTIONAL TESTS No Degradation in Output Power NOTE: 1. Value of “Cob” is that of die only. It is not measurable in MRF898 because of internal matching network. L2 L3 B3 VRE SHORTING PLUG B1 + VCC C9 B2 C10 C11 + C4 + C5 C6 C7 C8 C3 GND GND L1 L4 DUT 50 OHMS C2 C1 TL1 TL2 TL3 TL4 TL5 TL6 50 OHMS TL7 C12 B1, B2, B3 — Bead, Ferroxcube 56–390–65/3B C1, C2, C12 — 39 pF, 100 Mil Chip Capacitor C3, C11 — 91 pF, Mini Underwood or Equivalent C4, C7, C9 — 10 µF, 35 V Electrolytic C5 — 4000 pF, 1.0 kV Ceramic C6, C10 — 1000 pF, 350 V Unelco or Equivalent C8 — 47 pF, 100 Mil Chip Capacitor L1, L4 — 4 Turns #18 AWG Choke L2 — 11 Turns #20 AWG Choke on 10 Ohm, 1.0 Watt Resistor L3 — 3 Turns #18 AWG Choke on 10 Ohm, 1.0 Watt Resistor TL1, TL6 — 50 Ohm Microstrip TL2 — 400 x 950 Mils TL3, TL4 — 140 x 200 Mils TL5 — 320 x 690 Mils TL7 — 260 x 230 Mils Board — 3M Epsilam–10, 50 Mil Bias Boards — 1/32″ G10 or Equivalent Figure 1. 850 – 960 MHz Broadband Test Circuit MRF898 40 MOTOROLA RF DEVICE DATA 100 100 80 900 MHz 960 MHz 60 40 VCC = 24 V 20 Pin = 14 W Pin = 16 W Po, OUTPUT POWER (WATTS) Po, OUTPUT POWER (WATTS) 850 MHz 80 12 W 60 10 W 8W 40 20 VCC = 24 V 8 10 12 14 16 Pin, INPUT POWER (WATTS) 0 18 850 Figure 2. Output Power versus Input Power 10 100 90 12 W GPA 8 G PA , POWER GAIN (dB) Po, OUTPUT POWER (WATTS) Pin = 14 W 60 10 W 40 8W 70 6 40 VSWR 0 28 60 50 Pin = 12 W VCC = 24 V 4 f = 900 MHz 22 24 26 VCC, SUPPLY VOLTAGE (VOLTS) 80 ηc 2 20 0 20 950 Figure 3. Output Power versus Frequency 100 80 900 f, FREQUENCY (MHz) Figure 4. Output Power versus Supply Voltage 850 900 f, FREQUENCY (MHz) 1.3 30 1.2 20 1.1:1 10 η c , COLLECTOR EFFICIENCY (%) 6 INPUT VSWR 0 0 960 Figure 5. Typical Broadband Circuit Performance Po = 60 W, VCC = 24 V F MHz Zin Ohms ZOL* Ohms 850 11.2 + j2.3 4.0 + j3.9 900 8.2 – j1.0 4.4 + j1.8 960 4.7 – j2.0 5.3 + j3.7 ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device operates at a given ZOL* = output power, voltage and frequency. f = 850 MHz 960 ZOL* 900 f = 850 MHz Zin 900 960 Figure 6. Input/Output Impedance versus Frequency MOTOROLA RF DEVICE DATA MRF898 41 PACKAGE DIMENSIONS L N IDENTIFICATION NOTCH 4 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 6 –B– 1 K 2 3 Q 2 PL D 4 PL F 2 PL 0.13 (0.005) M T A 2 PL J C H E –T– M B M DIM A B C D E F H J K L N Q STYLE 1: PIN 1. 2. 3. 4. 5. 6. INCHES MIN MAX 0.965 0.985 0.390 0.410 0.250 0.290 0.075 0.090 0.095 0.115 0.110 0.130 0.155 0.175 0.004 0.006 0.090 0.116 0.725 BSC 0.415 0.435 0.120 0.135 MILLIMETERS MIN MAX 24.52 25.01 9.91 10.41 6.35 7.36 1.91 2.28 2.42 2.92 2.80 3.30 3.94 4.44 0.11 0.15 2.29 2.94 18.41 BSC 10.55 11.04 3.05 3.42 BASE EMITTER BASE BASE COLLECTOR BASE –A– SEATING PLANE CASE 333A–02 ISSUE C Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. MRF898 42 ◊ *MRF898/D* MRF898/D MOTOROLA RF DEVICE DATA