Order this document by MRF240/D SEMICONDUCTOR TECHNICAL DATA The RF Line . . . designed for 13.6 volt VHF large–signal class C and class AB linear power amplifier applications in commercial and industrial equipment. • High Common Emitter Power Gain • Specified 13.6 V, 160 MHz Performance: Output Power = 40 Watts Power Gain = 9.0 dB Min Efficiency = 55% Min 40 W, 145 – 175 MHz RF POWER TRANSISTORS NPN SILICON • Load Mismatch Capability at Rated Voltage and RF Drive • Silicon Nitride Passivated • Low Intermodulation Distortion, d3 = – 30 dB Typ MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 16 Vdc Collector–Base Voltage VCBO 36 Vdc Emitter–Base Voltage VEBO 4.0 Vdc Collector Current — Continuous IC 8.0 Adc Total Device Dissipation @ TC = 25°C (1) Derate above 25°C PD 100 0.57 Watts W/°C Storage Temperature Range Tstg – 65 to +150 °C CASE 145A–09, STYLE 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (2) Symbol Max Unit RθJC 1.75 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 20 mAdc, IB = 0) V(BR)CEO 16 — — Vdc Collector–Emitter Breakdown Voltage (IC = 20 mAdc, VBE = 0) V(BR)CES 36 — — Vdc Emitter–Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) V(BR)EBO 4.0 — — Vdc ICBO — — 10 mAdc hFE 10 70 150 — Cob — 90 125 pF Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCB = 15 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = 4.0 Adc, VCE = 5.0 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz) NOTES: (continued) 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. 2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. RF DEVICE DATA MOTOROLA Motorola, Inc. 1994 MRF240 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Common–Emitter Amplifier Power Gain (VCC = 13.6 Vdc, Pout = 40 W, f = 160 MHz) GPE 9.0 10 — dB Collector Efficiency (VCC = 13.6 Vdc, Pout = 40 W, f = 160 MHz) η 55 — — % IMD (d3) — – 30 — dB FUNCTIONAL TESTS TYPICAL SSB PERFORMANCE Intermodulation Distortion (3) (VCC = 13.6 Vdc, Pout = 35 W (PEP), f1 = 146 MHz, f2 = 146.002 MHz, ICQ = 50 mAdc) NOTE: 3. To MIL–STD–1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone. RFC3 C10 C11 C8 + C9 – + +13.6 V – RFC2 L5 L4 RF INPUT C1 L2 L1 C7 RF OUTPUT L3 DUT C5 C6 RFC1 C2 C3 C4 BEAD C1 — 200 pF, 350 Vdc, UNELCO C2 — 100 pF, 350 Vdc, UNELCO C3 — 40 pF, 350 Vdc, UNELCO C4, C5 — 80 pF, 350 Vdc, UNELCO C6 — 1.0 – 20 pF, ARCO Trimmer C7 — 100 pF 350 Vdc, UNELCO C8 — 0.1 µF ERIE Disc Ceramic C9 — 1.0 µF TANTALUM C10, C11 — 680 pF ALLEN BRADLEY Feedthru RFC1 — 0.15 µH Molded Choke RFC2 — 10 Turns, #18 AWG on 470 Ohm, RFC2 — 1.0 Watt Resistor Bead — FERROXCUBE Bead RFC3 — FERROXCUBE Choke, VK200–4B L1 — 3.3 x 0.2 cm AIRLINE Inductor L2 — 1.0 x 0.2 cm AIRLINE Inductor L3 — 1.2 x 0.6 cm Brass Pad L4 — 1.2 x 0.6 cm Brass Pad and L4 — 2.0 x 0.2 cm AIRLINE Inductor Board — G10, εr = 5, t = 62 mils Board — 2 sided, 2 oz. Clad Connectors: Type N Figure 1. 160 MHz Test Circuit Schematic MRF240 2 MOTOROLA RF DEVICE DATA 12 50 Pout = 40 W Pout , OUTPUT POWER (WATTS) VCC = 13.6 V G PE, POWER GAIN (dB) 11 VCC = 13.6 V 10 12.5 W 9 8 40 f = 145 MHz 75 MHz 20 10 7 140 150 160 170 f, FREQUENCY (MHz) 180 160 MHz 30 190 1 Figure 2. Power Gain versus Frequency 2 3 4 Pin, INPUT POWER (WATTS) 60 Pin = 5 W Pin = 5 W Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 6 Figure 3. Output Power versus Input Power 60 4W 50 3W 40 30 50 4W 40 3W 30 f = 160 MHz f = 145 MHz 20 5 20 8 9 10 11 12 13 14 15 VCC, SUPPLY VOLTAGE (VOLTS) 16 17 Figure 4. Output Power versus Supply Voltage 18 8 9 10 11 12 13 14 15 VCC, SUPPLY VOLTAGE (VOLTS) 16 17 18 Figure 5. Output Power versus Supply Voltage 60 Pout , OUTPUT POWER (WATTS) Pin = 5 W 50 4W 40 3W 30 f = 175 MHz 20 8 9 10 11 12 13 14 15 VCC, SUPPLY VOLTAGE (VOLTS) 16 17 18 Figure 6. Output Power versus Supply Voltage MOTOROLA RF DEVICE DATA MRF240 3 –J1.0 0 +J1.0 +J2.0 –J2.0 Zin –J3.0 1.0 160 +J3.0 175 f = 145 MHz Pout = 40 W, VCC = 13.6 Vdc –J4.0 2.0 ZOL* 160 175 3.0f = 145 MHz 4.0 f MHz Zin Ohms ZOL* Ohms 145 160 175 1.0 + j0.5 0.98 + j0.6 0.98 + j0.7 2.8 + j0.3 2.7 + j0.4 2.6 + j0.5 +J4.0 ZOL* = Conjugate of the optimum load ZOL* = impedance into which the device ZOL* = operates at a given output power, ZOL* = voltage and frequency. 5.0 Figure 7. Series Equivalent Input/Output Impedances MRF240 4 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS T A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. J S C E SEATING PLANE P 8–32UNC–2A WRENCH FLAT L U D 3 B 2 K 4 DIM A B C D E J K L M P R S T U INCHES MIN MAX 0.370 0.385 0.320 0.330 0.670 0.790 0.215 0.235 0.070 ––– 0.003 0.007 0.490 ––– 0.055 0.070 45 _NOM ––– 0.050 0.299 0.307 0.158 0.178 0.083 0.100 0.098 0.132 MILLIMETERS MIN MAX 9.40 9.78 8.13 8.38 17.02 20.07 5.46 5.97 1.78 ––– 0.08 0.18 12.45 ––– 1.40 1.78 45 _NOM ––– 1.27 7.59 7.80 4.01 4.52 2.11 2.54 2.49 3.35 1 M R STYLE 1: PIN 1. 2. 3. 4. EMITTER BASE EMITTER COLLECTOR CASE 145A–09 ISSUE M MOTOROLA RF DEVICE DATA MRF240 5 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 MRF240 6 ◊ *MRF240/D* MRF240/D MOTOROLA RF DEVICE DATA