Order this document by MRF10150/D SEMICONDUCTOR TECHNICAL DATA The RF Line . . . designed for 1025 – 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 150 Watts Peak Gain = 9.5 dB Min, 10.0 dB (Typ) 150 W (PEAK) 1025 – 1150 MHz MICROWAVE POWER TRANSISTOR NPN SILICON • 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR • Hermetically Sealed Package • Silicon Nitride Passivated • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration • Internal Input and Output Matching • Characterized with 10 µs, 10% Duty Cycle Pulses • Recommended Driver for a Pair of MRF10500 Transistors CASE 376B–02, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCES 65 Vdc Collector–Base Voltage VCBO 65 Vdc Emitter–Base Voltage VEBO 3.5 Vdc Collector Current — Peak (1) IC 14 Adc Total Device Dissipation @ TC = 25°C (1), (2) Derate above 25°C PD 700 4.0 Watts W/°C Storage Temperature Range Tstg – 65 to + 200 °C TJ 200 °C Symbol Max Unit RθJC 0.25 °C/W Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (3) NOTES: 1. Under pulse RF operating conditions. 2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF amplifiers. 3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case θJC value measured @ 10 µs, 10%.) RF DEVICE DATA MOTOROLA Motorola, Inc. 1994 MRF10150 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 60 mAdc, VBE = 0) V(BR)CES 65 — — Vdc Collector–Base Breakdown Voltage (IC = 60 mAdc, IE = 0) V(BR)CBO 65 — — Vdc Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 3.5 — — Vdc ICBO — — 25 mAdc hFE 20 — — — Common–Base Amplifier Power Gain (VCC = 50 Vdc, Pout = 150 W Peak, f = 1090 MHz) GPB 9.5 10 — dB Collector Efficiency (VCC = 50 Vdc, Pout = 150 W Peak, f = 1090 MHz) η 40 — — % Load Mismatch (VCC = 50 Vdc, Pout = 150 W Peak, f = 1090 MHz, VSWR = 10:1 All Phase Angles) ψ Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCB = 36 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) FUNCTIONAL TESTS No Degradation in Output Power C2 Z5 C3 C4 + – + L1 D.U.T. C1 RF INPUT Z1 Z2 Z3 Z4 Z6 Z7 Z8 RF OUTPUT Z9 Z1–Z9 — Microstrip, See Details Board Material — Teflon Glass Laminate Dielectric Thickness = 0.030″ εr = 2.55, 2 Oz. Copper C1 — 82 pF 100 Mil Chip Capacitor C2 — 39 pF 100 Mil Chip Capacitor C3 — 0.1 µF C4 — 100 µF, 100 Vdc, Electrolytic L1 — 3 Turns #18 AWG, 1/8″ ID, 0.18 Long .625 .275 .15 .09 .081 .081 1.803 .39 1.383 .081 .625 .522 .100 1.751 .081 .583 .081 .787 .37 .363 .489 0.943 .173 .34 .334 1.0 .081 Figure 1. Test Circuit MRF10150 2 MOTOROLA RF DEVICE DATA POUT, OUTPUT POWER (WATTS) 220 180 140 100 60 f = 1090 MHz VCC = 50 V 20 0 0 2 4 6 8 10 12 14 16 18 20 22 24 PIN, INPUT POWER (WATTS) Figure 2. Output Power versus Input Power f = 1030 MHz 1060 Zin 1120 1090 Zo = 10 Ω 1150 ZOUT (ZOL*) 1150 1120 f = 1030 MHz 1060 1090 POUT = 150 W Pk VCC = 50 V f MHz Zin OHMS ZOL* (ZOUT) OHMS 1030 3.8 + j3.5 4.6 + j0.7 1060 4.0 + j3.3 4.6 + j0.3 1090 4.2 + j3.0 4.1 – j1.0 1120 4.4 + j2.3 3.8 – j0.8 1150 4.1 + j1.8 3.6 – j0.3 ZOL* is the conjugate of the optimum load impedance into which the device operates at a given output power voltage and frequency. Figure 3. Series Equivalent Input/Output Impedances MOTOROLA RF DEVICE DATA MRF10150 3 PACKAGE DIMENSIONS Q G 2 PL 0.25 (0.010) M T A B M M –B– R K D 2 PL 0.25 (0.010) H E F N M T A B M T A M 2 PL 0.25 (0.010) –T– –A– M M B M SEATING PLANE C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G H K N Q R INCHES MIN MAX 0.890 0.910 0.370 0.400 0.145 0.160 0.140 0.160 0.055 0.065 0.003 0.006 0.650 BSC 0.110 0.130 0.180 0.220 0.390 0.410 0.115 0.135 0.390 0.140 MILLIMETERS MIN MAX 22.61 23.11 9.40 10.16 3.69 4.06 3.56 4.06 1.40 1.65 0.08 0.15 16.51 BSC 2.80 3.30 4.57 5.59 9.91 10.41 2.93 3.42 9.91 10.41 STYLE 1: PIN 1. COLLECTOR 2. EMITTER 3. BASE CASE 376B–02 ISSUE B Motorola reserves the right to make changes without further notice to any products herein. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. MRF10150 4 ◊ *MRF10150/D* MRF10150/D MOTOROLA RF DEVICE DATA