Band Switching Diodes MA2C856 Silicon epitaxial planar type Unit : mm For band switching φ 0.45 max. Symbol Rating Unit Reverse voltage (DC) VR 35 V Forward current (DC) IF 100 mA Operating ambient temperature Topr −25 to +85 °C Storage temperature Tstg −55 to +100 °C 2.2 ± 0.3 13 min. ■ Absolute Maximum Ratings Ta = 25°C Parameter 13 min. 1 0.2 max. • Extra-small DHD envelope, allowing to insert into a 5 mm pitch hole • Less voltage dependence of the terminal capacitance Ct • Low forward dynamic resistance rf • Optimum for a band switching of a tuner COLORED BAND INDICATES CATHODE 0.2 max. ■ Features 2 φ 1.75 max. 1 : Cathode 2 : Anode JEDEC : DO-34 ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions (DC)* IR VR = 33 V Forward voltage (DC) VF IF = 100 mA Terminal capacitance Ct VR = 15 V, f = 1 MHz Forward dynamic resistance rf IF = 3 mA, f = 100 MHz Reverse current Min Typ Max Unit 100 nA 1 V 2 pF 0.85 Ω Note) 1.Rated input/output frequency: 100 MHz 2.* : Measurement with the beam shielded ■ Cathode Indication Type No. MA2C856 Color Yellow 1 MA2C856 Band Switching Diodes IF V F 103 Ta = 125°C 1 10−1 75°C 10 1 25°C Ta = 125°C 0 0.2 0.6 10−2 0.8 1.0 10−2 0 10 20 rf f 0.8 0.4 100 300 1 000 Frequency f (MHz) Terminal capacitance Ct (pF) f = 1 MHz Ta = 25°C 2.4 1.6 0.8 0 10 20 30 Reverse voltage VR (V) 2 0 40 80 40 2.0 IF = 3 mA Ta = 25°C 6 4 2 0 1 3 10 30 120 160 Ambient temperature Ta (°C) rf IF 100 300 Frequency f (MHz) Ct VR 3.2 50 Forward dynamic resistance rf (Ω) Forward dynamic resistance rf (Ω) Forward dynamic resistance rf (Ω) 1.2 30 40 rf f 8 IF = 3 mA Ta = 25°C 0 10 30 Reverse voltage VR (V) Forward voltage VF (V) 1.6 10 V 1 25°C − 20°C 0.4 VR = 25 V 10 10−1 10−1 75°C 0 102 Reverse current IR (nA) Reverse current IR (nA) Forward current IF (mA) 102 10 10−2 IR T a IR V R 103 102 1 000 f = 100 MHz Ta = 25°C 1.5 1.0 0.5 0 10−1 1 10 Forward current IF (mA) 102