High Voltage IGBT IXGP 28N120B VCES = 1200 V = 50 A IC25 VCE(sat) = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 50 A IC110 TC = 110°C ICM TC = 25°C, 1 ms SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 5 Ω Clamped inductive load PC TC = 25°C 28 A 150 A ICM = 60 @ 0.8 VCES A 250 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C TJ Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque (M3.5) TO-220 (IXGP) Maximum Ratings (TO-220) 0.55/5Nm/lb.in. Weight 4 G G = Gate, E = Emitter, C E C (TAB) C = Collector, TAB = Collector Features z High Voltage IGBT for resonant power supplies - Induction heating - Rice cookers z International standard package JEDEC TO-220 z Low switching losses, low V(sat) z MOS Gate turn-on - drive simplicity g Advantages z z z Symbol Test Conditions BVCES VGE(th) IC IC ICES VCE = VCES, VGE= 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. = 250 µA , VGE = 0 V = 250 µA, VCE = VGE = 28A, VGE = 15 V © 2003 IXYS All rights reserved High power density Suitable for surface mounting Easy to mount with 1 screw 1200 2.5 TJ = 25°C TJ = 125°C TJ = 125°C 2.9 2.8 5 V V 25 250 µA µA ±100 nA 3.5 V V DS99139(12/03) IXGP Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = 28A; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 18 25 S 2700 pF 170 pF 60 pF 92 nC 15 nC Qgc 30 nC td(on) 30 ns Cies Coes VCE = 25 V, VGE = 0 V, f = 1 MHz Cres Qg Qge tri td(off) tfi IC = 28A, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25°°C 20 IC = 28 A, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 5 Ω 280 ns 160 320 ns 2.0 5.0 mJ td(on) 35 ns tri 28 ns Eon td(off) tfi 1.4 mJ IC = 28A, VGE = 15 V 250 ns VCE = 0.8 VCES, RG = Roff = 5 Ω 300 ns 8.0 mJ Eoff TO-220 Outline Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain ns 180 Eoff Inductive load, TJ = 125°°C 28N120B 0.5 K/W RthJC RthCK 0.25 K/W IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXGP Fig. 1. Output Characte ristics @ 25 Deg. C Fig. 2. Extended Output Characte ristics @ 25 de g. C 270 56 VGE = 15V 13V 11V 49 VGE = 17V 240 15V 210 35 I C - Amperes 42 I C - Amperes 28N120B 9V 28 21 7V 14 13V 180 150 11V 120 90 9V 60 7 7V 30 5V 0 0 0.5 1 1.5 2 2.5 3 3.5 0 4 2 4 6 8 Fig. 3. Output Characteristics @ 125 Deg. C 56 14 16 18 20 1.3 VGE = 15V I C = 56A 1.2 V C E (sat)- Normalized 42 I C - Amperes 12 Fig. 4. De pende nce of V CE(sat) on Tem perature VGE = 15V 13V 11V 49 10 V C E - Volts V C E - Volts 9V 35 28 7V 21 14 1.1 1.0 I C = 28A 0.9 0.8 I C = 14A 0.7 7 5V 0 0.6 0.5 1 1.5 2 2.5 3 3.5 0 4 25 V CE - Volts Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage 75 100 125 150 9 10 Fig. 6. Input Adm ittance 7 100 TJ = 25ºC 90 6 80 I C - Amperes VC E - Volts 50 TJ - Degrees Centigrade I C = 56A 28A 14A 5 4 70 60 50 40 TJ = 125ºC 25ºC -40ºC 30 3 20 10 2 0 6 7 8 9 10 11 12 13 V G E - Volts © 2003 IXYS All rights reserved 14 15 16 17 4 5 6 7 V G E - Volts 8 IXGP Fig. 8. Dependence of Turn-off Ene rgy Loss on RG Fig. 7. Trans conductance 35 22 30 20 TJ = -40ºC 25ºC 125ºC I C = 56A 18 E off - milliJoules 25 g f s - Siemens 28N120B 20 15 10 TJ = 125ºC VGE = 15V VCE = 960V 16 14 12 I C = 28A 10 8 6 5 I C = 14A 4 0 2 0 10 20 30 40 50 60 70 80 90 100 0 10 20 30 I C - Amperes Fig. 9. Dependence of Turn-Off Ene rgy Loss on IC 16 12 10 TJ = 125ºC 8 14 90 100 I C = 56A 10 I C = 28A 8 6 4 4 2 TJ = 25ºC 0 I C = 14A 0 10 15 20 25 30 35 40 45 50 55 60 25 35 I C - Amperes 45 55 65 75 TJ = 125ºC VGE = 15V VCE = 960V 800 600 I C = 56A I C = 28A I C = 14A 400 200 Switching Time - nanoseconds 700 td(off) tfi - - - - - - 1000 95 105 115 125 Fig. 12. Depe ndence of Turn-off Sw itching Tim e on IC 1400 1200 85 TJ - Degrees Centigrade Fig. 11. Dependence of Turn-off Sw itching Tim e on RG Switching Time - nanoseconds 80 12 6 2 70 R G = 5Ω R G = 47Ω - - - VGE = 15V VCE = 960V 18 E off - milliJoules E off - MilliJoules 14 60 20 R G = 5Ω R G = 47Ω - - - VGE = 15V VCE = 960V 16 50 Fig. 10. De pende nce of Turn-off Ene rgy Loss on Tem pe rature 20 18 40 R G - Ohms td(off) tfi - - - - - - 600 R G = 5Ω VGE = 15V VCE = 960V 500 TJ = 125ºC 400 300 200 TJ = 25ºC 100 0 0 10 20 30 40 50 60 R G - Ohms 70 80 90 100 10 15 20 25 30 35 40 45 50 55 60 I C - Amperes IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXGP Fig. 13. Dependence of Turn-off Sw itching Tim e on Tem perature 550 Switching Time - nanoseconds 450 Fig. 14. Gate Charge 15 td(off) tfi - - - - - - 500 12 300 VG E - Volts 350 I C = 56A 250 I C = 28A 200 VCE = 600V IC = 28A IG = 10mA I C = 14A R G = 5Ω VGE = 15V VCE = 960V 400 28N120B I C = 14A 150 9 6 3 100 50 0 25 35 45 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade 0 10 20 30 40 50 60 70 80 90 100 Q G - nanoCoulombs Fig. 15. Capacitance 10000 f = 1 MHz Capacitance - p F C ies 1000 C oes 100 C res 10 0 5 10 15 20 25 30 35 40 V C E - Volts Fig. 16. Maxim um Transient Therm al Resistance R (th) J C - (ºC/W) 1.00 0.50 0.10 1 © 2003 IXYS All rights reserved 10 Pulse Width - milliseconds 100 1000