KSC3569 KSC3569 High Speed Switching Application • Low Collector Saturation Voltage • Specified of Reverse Biased SOA With Inductive Loads TO-220F 1 NPN Epitaxial Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 500 Units V 400 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 2 A ICP *Collector Current (Pulse) 4 A IB Base Current 1 A PC Collector Dissipation (TC=25°C) 15 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C * PW≤350µs, Duty Cycle≤10% Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage Test Condition IC = 0.5A, IB1 = 0.1A, L = 1mH Min. 400 Max. Units V VCEX(sus)1 Collector-Emitter Sustaining Voltage IC = 0.5A, IB1 = -IB2 = 0.1A Ta= 125°C, L = 180µH, Clamped 450 V VCEX(sus)2 Collector-Emitter Sustaining Voltage IC = 1A, IB1 = -IB2 = 0.2A, Ta= 125°C, L = 180µH, Clamped 400 V ICBO Collector Cut-off Current VCB = 400V, IE = 0 10 µA ICER Collector Cut-off Current VCE = 400V, RBE = 51Ω @ TC = 125°C 1 mA ICEX1 Collector Cut-off Current VCE = 400V, VBE (off) = -5V 10 µA ICEX2 Collector Cut-off Current VCE = 400V, VBE (off) = -5V @ TC= 125°C 1 mA IEBO Emitter Cut-off Current VBE = 5V, IC = 0 10 µA hFE1 hFE2 * DC Current Gain VCE = 5V, IC = 0.1A VCE = 5V, IC = 0.5A VCE(sat) * Collector-Emitter Saturation Voltage IC = 0.5A, IB = 0.1A VBE(sat) * Base-Emitter Saturation Voltage IC = 0.5A, IB = 0.1A tON Turn ON Time tSTG Storage Time tF Fall Time VCC = 150V, IC = 0.5A IB1 = -IB2 = 0.1A RL = 300Ω 20 10 80 - 1.2 V 1 µs 1 V 2.5 µs 1 µs * Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed hFE Classification Classification R O Y hFE1 20 ~ 40 30 ~ 60 40 ~ 80 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSC3569 Typical Characteristics 1000 1.0 0.8 IB VCE = 5V IB = 80mA A = 100m IB = 70mA IB = 60mA 0.6 IB = 50mA IB = 40mA hFE, DC CURRENT GAIN IB = 30mA IB = 20mA 0.4 IB = 10mA 0.2 100 10 1 0.0 0 1 2 3 4 1 5 VCE[V], COLLECTOR-EMITTER VOLTAGE 1000 Figure 2. DC current Gain 10 10 IC = 5 IB1 = -5 IB2 1 tON, tSTG, tF [µs], TIME IC = 5 I B V BE(sat) 0.1 V CE(sat) 0.01 tSTG 1 tF tON 0.1 0.01 1 10 100 1000 10 100 IC[mA], COLLECTOR CURRENT 1000 IC[mA], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Switching Time 10000 1.0 nL im ite d 10 0µ s 10 s µs s b S/ ite m Li 100 d 10 1 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area ©2000 Fairchild Semiconductor International 1000 0.8 0.6 0.4 VCEO(sus) 1000 1m IC[A], COLLECTOR CURRENT Di ss i pa tio m 10 IC[mA], COLLECTOR CURRENT 100 IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 0.2 VCEX(sus) IC[A], COLLECTOR CURRENT IB = 90mA 0.0 0 100 200 300 400 500 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 6. Reverse Bias Safe Operating Area Rev. A, February 2000 KSC3569 Typical Characteristics (Continued) 20.0 140 17.5 PC[W], POWER DISSIPATION 160 dT[%], IC DERATING 120 100 80 S/b Di ss 60 Lim ited ipa tio n 40 Lim ite d 20 0 15.0 12.5 10.0 7.5 5.0 2.5 0.0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 7. Derating Curve of Safe Operating Area ©2000 Fairchild Semiconductor International 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 8. Power Derating Rev. A, February 2000 KSC3569 Package Demensions 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 9.75 ±0.30 MAX1.47 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. E