FAIRCHILD KSC3569

KSC3569
KSC3569
High Speed Switching Application
• Low Collector Saturation Voltage
• Specified of Reverse Biased SOA With Inductive Loads
TO-220F
1
NPN Epitaxial Silicon Transistor
1.Base
2.Collector
3.Emitter
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Parameter
Collector-Base Voltage
Value
500
Units
V
400
V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current (DC)
2
A
ICP
*Collector Current (Pulse)
4
A
IB
Base Current
1
A
PC
Collector Dissipation (TC=25°C)
15
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
* PW≤350µs, Duty Cycle≤10%
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
VCEO(sus)
Parameter
Collector-Emitter Sustaining Voltage
Test Condition
IC = 0.5A, IB1 = 0.1A, L = 1mH
Min.
400
Max.
Units
V
VCEX(sus)1
Collector-Emitter Sustaining Voltage
IC = 0.5A, IB1 = -IB2 = 0.1A
Ta= 125°C, L = 180µH, Clamped
450
V
VCEX(sus)2
Collector-Emitter Sustaining Voltage
IC = 1A, IB1 = -IB2 = 0.2A,
Ta= 125°C, L = 180µH, Clamped
400
V
ICBO
Collector Cut-off Current
VCB = 400V, IE = 0
10
µA
ICER
Collector Cut-off Current
VCE = 400V, RBE = 51Ω @
TC = 125°C
1
mA
ICEX1
Collector Cut-off Current
VCE = 400V, VBE (off) = -5V
10
µA
ICEX2
Collector Cut-off Current
VCE = 400V, VBE (off) = -5V @
TC= 125°C
1
mA
IEBO
Emitter Cut-off Current
VBE = 5V, IC = 0
10
µA
hFE1
hFE2
* DC Current Gain
VCE = 5V, IC = 0.1A
VCE = 5V, IC = 0.5A
VCE(sat)
* Collector-Emitter Saturation Voltage
IC = 0.5A, IB = 0.1A
VBE(sat)
* Base-Emitter Saturation Voltage
IC = 0.5A, IB = 0.1A
tON
Turn ON Time
tSTG
Storage Time
tF
Fall Time
VCC = 150V, IC = 0.5A
IB1 = -IB2 = 0.1A
RL = 300Ω
20
10
80
-
1.2
V
1
µs
1
V
2.5
µs
1
µs
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed
hFE Classification
Classification
R
O
Y
hFE1
20 ~ 40
30 ~ 60
40 ~ 80
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC3569
Typical Characteristics
1000
1.0
0.8
IB
VCE = 5V
IB = 80mA
A
= 100m
IB = 70mA
IB = 60mA
0.6
IB = 50mA
IB = 40mA
hFE, DC CURRENT GAIN
IB = 30mA
IB = 20mA
0.4
IB = 10mA
0.2
100
10
1
0.0
0
1
2
3
4
1
5
VCE[V], COLLECTOR-EMITTER VOLTAGE
1000
Figure 2. DC current Gain
10
10
IC = 5 IB1 = -5 IB2
1
tON, tSTG, tF [µs], TIME
IC = 5 I B
V BE(sat)
0.1
V CE(sat)
0.01
tSTG
1
tF
tON
0.1
0.01
1
10
100
1000
10
100
IC[mA], COLLECTOR CURRENT
1000
IC[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Switching Time
10000
1.0
nL
im
ite
d
10
0µ
s
10
s
µs
s
b
S/
ite
m
Li
100
d
10
1
10
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
©2000 Fairchild Semiconductor International
1000
0.8
0.6
0.4
VCEO(sus)
1000
1m
IC[A], COLLECTOR CURRENT
Di
ss
i pa
tio
m
10
IC[mA], COLLECTOR CURRENT
100
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
10
0.2
VCEX(sus)
IC[A], COLLECTOR CURRENT
IB = 90mA
0.0
0
100
200
300
400
500
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 6. Reverse Bias Safe Operating Area
Rev. A, February 2000
KSC3569
Typical Characteristics (Continued)
20.0
140
17.5
PC[W], POWER DISSIPATION
160
dT[%], IC DERATING
120
100
80
S/b
Di
ss
60
Lim
ited
ipa
tio
n
40
Lim
ite
d
20
0
15.0
12.5
10.0
7.5
5.0
2.5
0.0
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 7. Derating Curve of Safe Operating Area
©2000 Fairchild Semiconductor International
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 8. Power Derating
Rev. A, February 2000
KSC3569
Package Demensions
3.30 ±0.10
TO-220F
10.16 ±0.20
2.54 ±0.20
ø3.18 ±0.10
(7.00)
(1.00x45°)
15.87 ±0.20
15.80 ±0.20
6.68 ±0.20
(0.70)
0.80 ±0.10
)
0°
(3
9.75 ±0.30
MAX1.47
#1
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.76 ±0.20
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
4.70 ±0.20
0.35 ±0.10
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A, February 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
E2CMOS™
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench®
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. E