KSC2751 KSC2751 High Speed High Current Switching Industrial Use TO-3P 1 NPN Epitaxial Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 500 Units V 400 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 15 A ICP *Collector Current (Pulse) 30 A IB Base Current (DC) 7.5 A PC Collector Dissipation (TC=25°C) 120 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C * PW≤300µs, Duty Cycle≤10% Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO (sus) Parameter Collector-Emitter Sustaining Voltage Test Condition IC = 10A, IB1= 2A, L = 50µH Min 400 Typ Max Units V VCEX(sus)1 Collector-Emitter Sustaining Voltage IC = 10A, IB1= -IB2 = 2A TC =125°C, l = 180µH, Clamped 450 V VCEX(sus)2 Collector-Emitter Sustaining Voltage IC = 20A, IB1 = 4A, -IB2 = 2A TC= 125°C, L = 180µH,Clamped 400 V ICBO Collector Cut-off Current VCB = 400V, IE = 0 100 µA ICER Collector Cut-off Current VCE = 400V, RBE = 50Ω @ TC = 125°C 2 mA ICEX1 Collector Cut-off Curren VCE = 400V, VBE(off) = -1.5V 100 µA ICEX2 Collector Cut-off Current VCE = 400V, VBE(off) = -1.5V @ TC = 125Ω 1 mA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 10 µA hFE1 hFE2 hFE3 * DC Current Gain VCE = 5V, IC = 2A VCE = 5V, IC = 5A VCE = 5V, IC = 10A 15 10 7 35 80 VCE(sat) * Collector-Emitter Saturation Voltage IC = 10A, IB = 2A 0.3 1 VBE(sat) * Base Emitter ON Voltage IC = 10A, IB = 2A 1 1.5 V V tON Turn ON Time 1 µs tSTG Storage Time 2.5 µs tF Fall Time VCC = 150V, IC = 10A IB1 = -IB2 = 2A RL = 15Ω 0.7 µs * Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed hFE Classificntion Classification N R O Y hFE1 15 ~ 30 20 ~ 40 30 ~ 60 40 ~ 80 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSC2751 Typical Characteristics 20 1000 VCE = 5V Pulsed IB = 2.0A IB = 1.8A IB = 1.6A IB = 1.4A IB = 1.2A IB = 1.0A IB = 0.8A 16 14 12 10 IB = 0.6A 8 IB = 0.4A 6 IB = 0.2A 4 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 18 100 10 2 1 0.01 0 0 1 2 3 4 5 0.1 Figure 1. Static Characteristic 100 Figure 2. DC current Gain 10 100 IC = 5 IB1 = -5 IB2 Pulsed, VCC = 150V IC = 5 IB 1 tON, tSTG, tF [µs], TIME V BE(sat) 0.1 10 tSTG 1 VCE (sat) tF tON 0.01 0.01 0.1 1 10 0.1 0.1 100 1 IC[A], COLLECTOR CURRENT 10 IC[A], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Switching Time 100 20 0u s 1m VCEO(sus) MAX. s s m d 10 ite Lim DC S/b 1 =1 us 0.1 0.01 1 10 100 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area ©2000 Fairchild Semiconductor International 1000 10 VCEO(sus) 10 0 Dis sip Lim ation ited 10 IC[A], COLLECTOR CURRENT PW IC(Pulse) MAX. VCEX(sus) VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 IC [A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT 1 0 0 100 200 300 400 500 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 6. Reverse Bias Safe Operating Area Rev. A, February 2000 KSC2751 Typical Characteristics (Continued) 160 140 140 PC[W], POWER DISSIPATION 160 dT[%], IC DERATING 120 100 80 S/b Di ss 60 Lim ited ipa tio n 40 Lim ite d 20 0 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 7. Derating Curve of Safe Operating Area ©2000 Fairchild Semiconductor International 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 8. Power Derating Rev. A, February 2000 KSC2751 Package Demensions TO-3P 15.60 ±0.20 3.00 ±0.20 3.80 ±0.20 +0.15 1.00 ±0.20 18.70 ±0.20 23.40 ±0.20 19.90 ±0.20 1.50 –0.05 16.50 ±0.30 2.00 ±0.20 9.60 ±0.20 4.80 ±0.20 3.50 ±0.20 13.90 ±0.20 ø3.20 ±0.10 12.76 ±0.20 13.60 ±0.20 1.40 ±0.20 +0.15 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.05 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. E