KSC2690/2690A KSC2690/2690A Audio Frequency High Frequency Power Amplifier • Complement to KSA1220/KSA1220A TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : KSC2690 : KSC2690A 120 160 V V Collector- Emitter Voltage : KSC2690 : KSC2690A 120 160 V V V Collector-Base Voltage VEBO Emitter-Base Voltage 5 IC Collector Current (DC) 1.2 A ICP *Collector Current (Pulse) 2.5 A IB Base Current(DC) 0.3 A PC Collector Dissipation (Ta=25°C) 1.2 W PC Collector Dissipation (TC=25°C) 20 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C * PW≤10ms, Duty Cycle≤50% Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO Parameter Collector Cut-off Current Test Condition VCB = 120V, IE = 0 Min. Typ. Max. 1 Units µA 35 60 105 140 1 µA 320 IEBO Emitter Cut-off Current VEB = 3V, IC= 0 hFE1 hFE2 * DC Current Gain VCE = 5V, IC = 5mA VCE = 5V, IC = 0.3A VCE(sat) * Collector-Emitter Saturation Voltage IC = 1A, IB = 0.2A 0.4 0.7 VBE(sat) * Base-Emitter Saturation Voltage IC = 1A, IB = 0.2A 1 1.3 fT Current Gain Bandwidth Product VCE = 5V, IC = 0.2A 155 MHz Cob Output Capacitance VCB =10V, IE =0, f = 1MHz 19 pF V V * Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed hFE Classificntion Classification R O Y hFE2 60 ~ 120 100 ~ 200 160 ~ 320 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSC2690/2690A Typical Characteristics 1.6 1000 VCE = 5V Pulse Test Pulse Test IB=10mA IB=9mA IB=8mA IB=7mA IB=6mA IB=5mA IB=4mA 1.2 1.0 0.8 0.6 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 1.4 IB=3mA 0.4 IB=2mA IB=1mA 0.2 100 10 IB=0mA 0.0 0 10 20 30 40 50 60 70 1 1E-3 0.001 80 0.01 1 10 Figure 2. DC current Gain 10 1000 IC = 5 I B Pulse Test f = 1MHz IE = 0 Cob[pF], CAPACITANCE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Figure 1. Static Characteristic VBE (sat) 1 0.1 100 10 VCE (sat) 0.01 1E-3 1 0.01 0.1 1 10 1 IC[A], COLLECTOR CURRENT 10 100 1000 VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance 10 1000 PW = 10 s 0u s) m 50 = t ed i W (P Lim DC S/b Dis sip Lim ation ited s 10 IC(max) DC 1 1m 100 IC(max) Pulse s IC[A], COLLECTOR CURRENT VCE = 5V Pulse Test m 10 fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT 0.1 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE 0.1 KSC2690 VCEO MAX KSC2690A VCEO MAX 0.01 1 0.01 0.1 IC[A], COLLECTOR CURRENT Figure 5. Current Gain Bandwidth Product ©2000 Fairchild Semiconductor International 1 1 10 100 1000 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 6. Safe Operating Area Rev. A, February 2000 KSC2690/2690A Typical Characteristics (Continued) 32 140 28 PC[W], POWER DISSIPATION 160 dT[%], IC DERATING 120 100 80 S/b 60 Di ss Lim ited ipa tio n 40 Lim ite d 20 0 24 20 16 12 8 4 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 7. Derating Curve of Safe Operating Areas ©2000 Fairchild Semiconductor International 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 8. Power Derating Rev. A, February 2000 KSC2690/2690A Package Demensions 8.00 ±0.30 11.00 ø3.20 ±0.10 ±0.20 3.25 ±0.20 14.20MAX 3.90 ±0.10 TO-126 (1.00) (0.50) 0.75 ±0.10 #1 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20] 16.10 ±0.30 13.06 0.75 ±0.10 ±0.20 1.75 ±0.20 1.60 ±0.10 +0.10 0.50 –0.05 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. E