PN3565 C TO-92 BE NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V VCEO Collector-Emitter Voltage 25 VCBO Collector-Base Voltage 30 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current - Continuous 500 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1997 Fairchild Semiconductor Corporation Max Units PN3565 625 5.0 83.3 mW mW/°C °C/W 200 °C/W PN3565 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* I C = 2.0 mA, I B = 0 25 V V(BR)CBO Collector-Base Breakdown Voltage I C = 100 µA, I E = 0 30 V V(BR)EBO Emitter-Base Breakdown Voltage I E = 10 µA, I C = 0 6.0 ICBO Collector Cutoff Current VCB = 25 V, IE = 0 V 50 nA ON CHARACTERISTICS* hFE DC Current Gain VCE = 10 V, IC = 1.0 mA VCE( sat) Collector-Emitter Saturation Voltage IC = 1.0 mA, I B = 0.1 mA 150 600 0.35 V SMALL SIGNAL CHARACTERISTICS Cob Output Capacitance VCB = 5.0 V hie Input Impedance hoe Output Admittance hfe Small-Signal Current Gain I C = 1.0 mA, VCE = 5.0 V, f = 1.0 kHz I C = 1.0 mA, VCE = 5.0 V, f = 1.0 kHz I C = 1.0 mA, VCE = 5.0 V, f = 20 MHz I C = 1.0 mA, VCE = 5.0 V, f = 1.0 kHz *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% 4.0 pF 2.0 20 kΩ 0.5 35 µmhos 2.0 12 120 750 PN3565 NPN General Purpose Amplifier