2N4126 MMBT4126 C E C TO-92 BE SOT-23 B Mark: ZF PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents to 10 µA as a switch and to 100 mA as an amplifier. Sourced from Process 66. See 2N3906 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 25 V VCBO Collector-Base Voltage 25 V VEBO Emitter-Base Voltage 4.0 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA= 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 1997 Fairchild Semiconductor Corporation Max Units 2N4126 625 5.0 83.3 *MMBT4126 350 2.8 200 357 mW mW/°C °C/W °C/W 2N4126 / MMBT4126 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage IC = 1.0 mA, IB = 0 25 V V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µA, I E = 0 25 V V(BR)EBO Emitter-Base Breakdown Voltage IC = 10 µA, I C = 0 4.0 ICBO Collector Cutoff Current VCB = 20 V, IE = 0 50 nA IEBO Emitter Cutoff Current VEB = 3.0 V, IC = 0 50 nA V ON CHARACTERISTICS* hFE DC Current Gain VCE( sat) Collector-Emitter Saturation Voltage IC = 2.0 mA, VCE = 1.0 V IC = 50 mA, VCE = 1.0 V IC = 50 mA, IB = 5.0 mA VBE( sat) Base-Emitter Saturation Voltage IC = 50 mA, IB = 5.0 mA 120 60 360 0.4 V 0.95 V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product Cibo Input Capacitance Ccb Collector-Base Capcitance hfe Small-Signal Current Gain NF Noise Figure *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% IC = 10 mA, VCE = 20 V, f = 100 MHz VEB = 0.5 V, IC = 0, f = 1.0 MHz VCB = 5.0 V, IE = 0, f = 100 kHz IC = 2.0 mA, VCE = 10 V, f = 1.0 kHz IC = 100 µA, VCE = 5.0 V, RS=1.0 kΩ, f=10 Hz to 15.7 kHz 250 120 MHz 10 pF 4.5 pF 480 4.0 dB 2N4126 / MMBT4126 PNP General Purpose Amplifier