PN4250A C TO-92 BE PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V VCEO Collector-Emitter Voltage 60 VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 500 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25° C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1997 Fairchild Semiconductor Corporation Max Units PN4250A 625 5.0 83.3 mW mW/°C °C/W 200 °C/W PN4250A Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO I C = 5.0 mA, IB = 0 60 V I C = 10 µA, I B = 0 60 V V(BR)CBO Collector-Emitter Breakdown Voltage* Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage I C = 10 µA, I E = 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage Collector-Cutoff Current I E = 10 µA, IC = 0 VCB = 50 V, I E = 0 5.0 ICBO IEBO Emitter-Cutoff Current VEB = 3.0 V, I C = 0 V(BR)CES V 10 nA 20 nA ON CHARACTERISTICS* hFE DC Current Gain VCE(sat ) Collector-Emitter Saturation Voltage VCE = 5.0 V, I C = 100 µA IC = 10 mA, IB = 0.5 mA 250 700 0.25 V 6.0 pF SMALL SIGNAL CHARACTERISTICS Cob Output Capacitance V CB = 5.0 V, f = 1.0 MHz h fe Small-signal Current Gain V CE = 5.0 V, I C = 1.0 mA, 250 800 h ie Input Impedance f = 1.0 kHz 6.0 20 kΩ h oe Output Admittance 5.0 50 µmhos h re NF Voltage Feedback Ratio 10 2.0 x10 dB 2.0 dB Noise Figure *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% V CE = 5.0 V, I C = 250 µA, R S = 1.0 kΩ, f = 1.0 kHz, B W = 150 Hz V CE = 5.0 V, I C = 20 µA, R S = 10 kΩ, f = 1.0 kHz, B W = 150 Hz -4 PN4250A PNP General Purpose Amplifier