FAIRCHILD MPSL01

MPSL01
C
TO-92
BE
NPN General Purpose Amplifier
This device is designed for general purpose, high voltage
amplifiers and gas discharge display driving. Sourced from
Process 16. See 2N5551 for characteristics.
Absolute Maximum Ratings*
Symbol
TA = 25°C unless otherwise noted
Parameter
Value
Units
V
VCEO
Collector-Emitter Voltage
120
VCBO
Collector-Base Voltage
140
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current - Continuous
200
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD
TA = 25°C unless otherwise noted
Characteristic
RθJC
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
 1997 Fairchild Semiconductor Corporation
Max
Units
MPSL01
625
5.0
83.3
mW
mW/°C
°C/W
200
°C/W
MPSL01
Discrete POWER & Signal
Technologies
(continued)
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
IC = 1.0mA, IB = 0
120
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 100 µA, IE = 0
140
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10 µA, I C = 0
5.0
V
I CBO
Collector Cutoff Current
VCB = 75 V, IE = 0
1.0
µA
I EBO
Emitter Cutoff Current
VEB = 4.0 V, I C = 0
100
nA
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE = 5.0 V, I C = 10 mA
VCE( sat)
Collector-Emitter Saturation Voltage
VBE( sat )
Base-Emitter Saturation Voltage
IC = 10
IC = 50
IC = 10
IC = 50
50
mA, IB = 1.0 mA
mA, IB = 5.0 mA
mA, IB = 1.0 mA
mA, IB = 5.0 mA
300
0.2
0.3
1.2
1.4
V
V
V
V
8.0
pF
SMALL SIGNAL CHARACTERISTICS
Cob
Output Capacitance
VCB = 10 V, f = 1.0 MHz
hfe
Small-Signal Current Gain
IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz
IC = 10 mA, VCE = 10 V,
FT
Current Gain - Bandwidth Product
*Pulse Test: Pulse Width ≤ 300
µs, Duty Cycle ≤ 2.0%
30
60
MHz
MPSL01
NPN General Purpose Amplifier