MPSL01 C TO-92 BE NPN General Purpose Amplifier This device is designed for general purpose, high voltage amplifiers and gas discharge display driving. Sourced from Process 16. See 2N5551 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V VCEO Collector-Emitter Voltage 120 VCBO Collector-Base Voltage 140 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1997 Fairchild Semiconductor Corporation Max Units MPSL01 625 5.0 83.3 mW mW/°C °C/W 200 °C/W MPSL01 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 1.0mA, IB = 0 120 V V(BR)CBO Collector-Base Breakdown Voltage IC = 100 µA, IE = 0 140 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, I C = 0 5.0 V I CBO Collector Cutoff Current VCB = 75 V, IE = 0 1.0 µA I EBO Emitter Cutoff Current VEB = 4.0 V, I C = 0 100 nA ON CHARACTERISTICS* hFE DC Current Gain VCE = 5.0 V, I C = 10 mA VCE( sat) Collector-Emitter Saturation Voltage VBE( sat ) Base-Emitter Saturation Voltage IC = 10 IC = 50 IC = 10 IC = 50 50 mA, IB = 1.0 mA mA, IB = 5.0 mA mA, IB = 1.0 mA mA, IB = 5.0 mA 300 0.2 0.3 1.2 1.4 V V V V 8.0 pF SMALL SIGNAL CHARACTERISTICS Cob Output Capacitance VCB = 10 V, f = 1.0 MHz hfe Small-Signal Current Gain IC = 1.0 mA, VCE = 10 V, f = 1.0 kHz IC = 10 mA, VCE = 10 V, FT Current Gain - Bandwidth Product *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% 30 60 MHz MPSL01 NPN General Purpose Amplifier