PN5134 C TO-92 BE PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V VCEO Collector-Emitter Voltage 10 VCBO Collector-Base Voltage 20 V VEBO Emitter-Base Voltage 3.5 V IC Collector Current - Continuous 500 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1997 Fairchild Semiconductor Corporation Max Units PN5134 625 5.0 83.3 mW mW/°C °C/W 200 °C/W PN5134 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* I C = 10 mA, I B = 0 10 V V(BR)CBO Collector-Base Breakdown Voltage I C = 10 µA, IE = 0 20 V V(BR)EBO Emitter-Base Breakdown Voltage I E = 10 µA, I C = 0 3.5 V V(BR)CES Collector-Emitter Breakdown Voltage I C = 10 µA 20 V ICBO Collector Cutoff Current VCB = 15 V, IE = 0, TA = 65 °C 10 µA ICES Collector Cutoff Current VCE = 15 V, IC = 0 0.4 µA ON CHARACTERISTICS* hFE DC Current Gain VCE( sat) Collector-Emitter Saturation Voltage VBE( sat) Base-Emitter Saturation Voltage VCE = 1.0 V, IC = 10 mA VCE = 0.4 V, IC = 30 mA IC = 10 mA, IB = 1.0 mA IC = 10 mA, IB = 3.3 mA IC = 10 mA, IB = 1.0 mA IC = 10 mA, IB = 3.3 mA 20 15 0.70 0.72 150 0.25 0.20 0.9 1.1 V V V V 4.0 pF SMALL SIGNAL CHARACTERISTICS Cob Output Capacitance VCB = 5.0 V, f = 1.0 MHz hfe Small-Signal Current Gain IC = 10 mA, VCE = 10 V, f = 100 MHz 2.5 SWITCHING CHARACTERISTICS ts Storage Time I C = IB1 = IB2 = 10 mA 18 ns ton Turn-on Time VCC = 3.0 V, IC = 10 mA, 18 ns td Delay Time I B1 = 3.3 mA 14 ns tr Rise Time 12 ns toff Turn-off Time VCC = 3.0V, IC = 10 mA 18 ns ts Storage Time I B1 = IB2 = 3.3 mA 13 ns tf Fall Time 13 ns *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% PN5134 PNP General Purpose Amplifier