PN4356 C TO-92 BE PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 67. See TN4033A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V VCEO Collector-Emitter Voltage 80 VCBO Collector-Base Voltage 80 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous TJ, Tstg Operating and Storage Junction Temperature Range 1.0 A -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1997 Fairchild Semiconductor Corporation Max Units PN4356 625 5.0 83.3 mW mW/°C °C/W 200 °C/W PN4356 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* I C = 10 mA, I B = 0 80 V V(BR)CBO Collector-Base Breakdown Voltage I C = 10 µA, IE = 0 80 V V(BR)EBO Emitter-Base Breakdown Voltage I E = 10 µA, I C = 0 5.0 ICBO Collector Cutoff Current IEBO Emitter Cutoff Current VCB = 50 V, IE = 0 VCB = 50 V, IE = 0, TA = 75 °C VEB = 5.0 V, IC = 0 VEB = 4.0 V, IC = 0 V 50 5.0 10 100 nA µA µA nA ON CHARACTERISTICS* hFE DC Current Gain VCE(sat ) Collector-Emitter Saturation Voltage VBE( sat) Base-Emitter Saturation Voltage VCE = 10 V, IC = 100 µA VCE = 10 V, IC = 1.0 mA VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 100 mA VCE = 10 V, IC = 500 mA I C = 150 mA, IB = 15 mA I C = 500 mA, IB = 50 mA I C = 150 mA, IB = 15 mA I C = 500 mA, IB = 50 mA 25 40 50 40 30 250 0.15 0.50 0.90 1.10 V V V V SMALL SIGNAL CHARACTERISTICS Cob Output Capacitance VCB = 10 V, f = 1.0 MHz 30 pF Cib Input Capacitance VEB = 0.5 V, f = 1.0 MHz 110 pF hfe Small-Signal Current Gain NF Noise Figure I C = 50 mA, VCE = 10 V, f = 100 MHz VCE = 10 V, IC = 100 µA, RS = 1.0 kΩ, f = 1.0 kHz, BW = 1.0 Hz 1.0 5.0 3.0 dB SWITCHING CHARACTERISTICS ton Turn-on Time VCC = 30 V, IC = 500 mA, 100 ns toff Turn-off Time I B1 = IB2 = 50 mA 400 ns *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% PN4356 PNP General Purpose Amplifier