Order this document by MRF641/D SEMICONDUCTOR TECHNICAL DATA The RF Line . . . designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Specified 12.5 Volt, 470 MHz Characteristics — Output Power = 15 Watts Minimum Gain = 7.8 dB Efficiency = 55% 15 W, 470 MHz CONTROLLED Q RF POWER TRANSISTOR NPN SILICON • Characterized with Series Equivalent Large–Signal Impedance Parameters • Built–In Matching Network for Broadband Operation • Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @ 16–Volt High Line and Overdrive • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. CASE 316–01, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 16 Vdc Collector–Base Voltage VCBO 36 Vdc Emitter–Base Voltage VEBO 4.0 Vdc Collector Current — Continuous IC 3.0 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 43.7 0.25 Watts W/°C Storage Temperature Range Tstg – 65 to +150 °C Symbol Max Unit RθJC 4.0 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 20 mAdc, IB = 0) V(BR)CEO 16 — — Vdc Collector–Emitter Breakdown Voltage (IC = 20 mAdc, VBE = 0) V(BR)CES 36 — — Vdc Emitter–Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) V(BR)EBO 4.0 — — Vdc ICES — — 5.0 mAdc Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCE = 15 Vdc, VBE = 0, TC = 25°C) (continued) REV 6 RF DEVICE DATA MOTOROLA Motorola, Inc. 1994 MRF641 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit hFE 30 70 150 — Cob — 40 60 pF Common–Emitter Amplifier Power Gain (VCC = 12.5 Vdc, Pout = 15 W, f = 470 MHz) Gpe 7.8 8.5 — dB Collector Efficiency (VCC = 12.5 Vdc, Pout = 15 W, f = 470 MHz) η 55 60 — % Output Mismatch Stress (VCC = 16 Vdc, Pin = 3.0 W, f = 470 MHz, VSWR = 20:1, All Phase Angles) ψ ON CHARACTERISTICS DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz) FUNCTIONAL TESTS No Degradation in Output Power RFC1 C9 + BEAD – C13 L1 VCC 12.5 V C10 + C7 C8 – C11 L2 RF OUTPUT C12 Z4 RF INPUT Z1 Z2 Z5 Z6 Z7 Z3 } C3 } C4 * * C5 C6 C2 C1 PARTS Z1 — 1.225″ x 0.187″ Microstrip Z2 — 0.884″ x 0.187″ Microstrip Z3 — Capacitor Block (Base) Z4 — Collector Block Z5 — 1.1″ x 0.187″ Microstrip Z6 — 0.433″ x 0.187″ Microstrip Z7 — 0.4″ x 0.187″ Microstrip Dotted Area — Capacitor Assembly NOTES C1, C2 — 0.8 – 10 pF Johanson C3, C4 — 24 pF Chip Caps 100 mils ATC C5, C6 — 22 pF Chip Caps 100 mils ATC C12 — 220 pF Chip Cap 100 mils ATC C7, C11 — 1.0 µF Tantalum 35 Vdc C9, C10 — 680 pF Feedthrough Allen–Bradley C13 — 200 pF UNELCO C8 — 0.1 µF, 50 V Erie Red Cap RFC1 — VK 200 — 104B Ferrite Choke L1 — 4 Turns 0.2″ Dia. #16 AWG L2 — 9 Turns 0.15″ Dia. #16 AWG *C5, C6, are mounted as close to the capacitor *assembly as possible. ‡‡ C3, C4 are mounted in the capacitor assembly. Board — 62.5 mil Glass Teflon, εr = 2.55. Bead — Ferroxcube 56–590–65–35EB Figure 1. Test Circuit Schematic MRF641 2 MOTOROLA RF DEVICE DATA 25 27 f = 470 MHz VCC = 12.5 Vdc 24 Pout , POWER OUTPUT (WATTS) Pout , POWER OUTPUT (WATTS) 30 21 18 15 12 9 6 VCC = 12.5 V Pin = 3 W 20 2W 15 10 1W 5 3 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 380 5 400 440 460 480 500 520 f, FREQUENCY (MHz) Figure 2. Power Output versus Power Input Figure 3. Power Output versus Frequency 540 30 25 27 f = 470 MHz Pin = 2 W 20 Pout , minus Pin (WATTS) Pout , POWER OUTPUT (WATTS) 420 Pin, POWER INPUT (WATTS) 15 10 f = 470 MHz VCC = 12.5 Vdc 24 21 18 15 12 5 9 6 3 0 8 9 10 11 12 13 14 15 0 16 0 0.5 1 1.5 2.5 3 3.5 4 VCC, SUPPLY VOLTAGE (VOLTS) Pin, POWER INPUT (WATTS) Figure 4. Power Output versus Supply Voltage Figure 5. Power Saturation Profile 0 2.0 6.0 8.0 f MHz 5 4.0 Pout = 15 W, VCC = 12.5 V Zin ZOL* Ohms Ohms 400 420 450 480 510 4.5 2.0 4.0 10. 0 2 0.6 + j4.0 0.7 + j4.2 1.0 + j5.0 1.2 + j5.2 1.7 + j6.4 1.0 6.0 420 3.5 – j1.2 3.4 – j0.8 3.0 + j0.5 2.7 + j1.2 2.6 + j1.6 450 480 2.0 510 3.0 450 420 f = 400 MHz f = 400 MHz ZOL* Zin 510 480 4.0 8.0 10. 0 12. 0 ZOL* = Conjugate of the load impedance into which the device output operates at a given power, η, and frequency. Figure 6. Series Equivalent Input–Output Impedance MOTOROLA RF DEVICE DATA MRF641 3 PACKAGE DIMENSIONS F D 4 R NOTES: 1. FLANGE IS ISOLATED IN ALL STYLES. K 3 DIM A B C D E F H J K L N Q R U 1 Q 2 L B C J E N INCHES MIN MAX 24.38 25.14 12.45 12.95 5.97 7.62 5.33 5.58 2.16 3.04 5.08 5.33 18.29 18.54 0.10 0.15 10.29 11.17 3.81 4.06 3.81 4.31 2.92 3.30 3.05 3.30 11.94 12.57 MILLIMETERS MIN MAX 0.960 0.990 0.490 0.510 0.235 0.300 0.210 0.220 0.085 0.120 0.200 0.210 0.720 0.730 0.004 0.006 0.405 0.440 0.150 0.160 0.150 0.170 0.115 0.130 0.120 0.130 0.470 0.495 H U A STYLE 1: PIN 1. 2. 3. 4. EMITTER COLLECTOR EMITTER BASE CASE 316–01 ISSUE D Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. MRF641 4 ◊ *MRF641/D* MRF641/D MOTOROLA RF DEVICE DATA