IRF IRF7507

PD - 91269I
IRF7507
HEXFET® Power MOSFET
l
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l
l
l
l
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Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
S1
G1
S2
G2
N-C HANNE L M O S F E T
1
8
2
7
3
6
4
5
D1
N-Ch
P-Ch
20V
-20V
D1
VDSS
D2
D2
P -C HANNE L M O S F E T
RDS(on) 0.135Ω 0.27Ω
T op V ie w
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The new Micro8 package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the
Micro8 an ideal device for applications where printed circuit board space is at
a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into
extremely thin application environments such as portable electronics and
PCMCIA cards.
M icro 8
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
VGSM
dv/dt
TJ , TSTG
Drain-Source Voltage
Continuous Drain Current, VGS
Continuous Drain Current, VGS
Pulsed Drain Current
Maximum Power Dissipation„
Maximum Power Dissipation„
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10µS
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
N-Channel
20
2.4
1.9
19
Units
P-Channel
-20
-1.7
-1.4
-14
1.25
0.8
10
± 12
16
5.0
-5.0
-55 to + 150
240 (1.6mm from case)
V
A
W
W
mW/°C
V
V
V/ns
°C
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambient „
Max.
100
Units
°C/W
1
12/1/98
IRF7507
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
I DSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
C iss
Input Capacitance
C oss
Output Capacitance
C rss
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
N-Ch 20
—
—
VGS = 0V, ID = 250µA
V
P-Ch -20 —
—
VGS = 0V, ID = -250µA
N-Ch — 0.041 —
Reference to 25°C, ID = 1mA
V/°C
P-Ch — -0.012 —
Reference to 25°C, ID = -1mA
— 0.085 0.14
VGS = 4.5V, ID = 1.7A ƒ
N-Ch
— 0.120 0.20
VGS = 2.7V, ID = 0.85A ƒ
Ω
— 0.17 0.27
VGS = -4.5V, ID =-1.2Aƒ
P-Ch
— 0.28 0.40
VGS = -2.7V, ID =-0.6A ƒ
N-Ch 0.7 —
—
VDS = VGS, ID = 250µA
V
P-Ch -0.7 —
—
VDS = VGS, ID = -250µA
N-Ch 2.6 —
—
VDS = 10V, ID = 0.85A ƒ
S
P-Ch 1.3 —
—
VDS = -10V, ID = -0.6Aƒ
N-Ch —
— 1.0
VDS = 16 V, VGS = 0V
P-Ch —
— -1.0
VDS = -16V, VGS = 0V
µA
N-Ch —
—
25
VDS = 16 V, VGS = 0V, TJ = 125°C
P-Ch —
— -25
VDS = -16V, VGS = 0V, TJ = 125°C
N-P ––
— ±100
VGS = ± 12V
N-Ch –– 5.3 8.0
N-Channel
P-Ch — 5.4 8.2
ID = 1.7A, VDS = 16V, VGS = 4.5V
N-Ch –– 0.84 1.3
nC
„
P-Ch — 0.96 1.4
P-Channel
N-Ch –– 2.2 3.3
ID = -1.2A, VDS = -16V, VGS = -4.5V
P-Ch — 2.4 3.6
N-Ch — 5.7 —
N-Channel
P-Ch — 9.1 —
VDD = 10V, ID = 1.7A, RG = 6.0Ω,
N-Ch —
24
—
RD = 5.7Ω
P-Ch —
35
—
ns
„
N-Ch —
15
—
P-Channel
P-Ch —
38
—
VDD = -10V, ID = -1.2A, RG = 6.0Ω,
N-Ch —
16
—
RD = 8.3Ω
P-Ch —
43
—
N-Ch — 260 —
N-Channel
P-Ch — 240 —
VGS = 0V, VDS = 15V, ƒ = 1.0MHz
N-Ch — 130 —
pF
ƒ
P-Ch — 130 —
P-Channel
N-Ch —
61
—
VGS = 0V, VDS = -15V, ƒ = 1.0MHz
P-Ch —
64
—
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
I SM
Pulsed Source Current (Body Diode) 
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min. Typ. Max. Units
Conditions
—
— 1.25
—
— -1.25 A
—
—
19
—
— -14
—
— 1.2
TJ = 25°C, IS = 1.7A, VGS = 0V ƒ
V
—
— -1.2
TJ = 25°C, IS = -1.2A, VGS = 0V ƒ
—
39
59
N-Channel
ns
—
52
78
TJ = 25°C, IF = 1.7A, di/dt = 100A/µs
—
37
56
P-Channel
ƒ
nC
TJ = 25°C, IF = -1.2A, di/dt = -100A/µs
—
63
95
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 21 )
‚ N-Channel ISD ≤ 1.7A, di/dt ≤ 66A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
P-Channel ISD ≤ -1.2A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
2
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
„ Surface mounted on FR-4 board, t ≤ 10sec.
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IRF7507
N - Channel
100
100
VGS
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
VGS
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
10
TOP
1
0.1
1.5V
20µ s P U LS E W ID TH
TJ = 25°C
A
0.01
0.1
1
I , D rain-to-S ource C urrent (A )
D
I , D rain-to-S ourc e C urrent (A )
D
TOP
10
1
1.5V
0.1
20µ s P U LS E W ID TH
TJ = 150°C
A
0.01
10
0.1
1
V D S , D rain-to-S ourc e V oltage (V )
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
I S D , R everse D rain C urrent (A )
I D , D rain-to-S ource C urrent (A )
100
10
T J = 1 5 0 °C
T J = 2 5 °C
1
V DS = 10V
2 0 µ s P U L S E W ID T H
0.1
1.5
2.0
2.5
3.0
3.5
4.0
10
T J = 150°C
T J = 25°C
1
0.1
0.4
A
Fig 3. Typical Transfer Characteristics
1.0
0.5
V G S = 4.5 V
0.0
-20
0
20
40
60
80
100 120 140 160
A
T J , Junction Tem perature (°C )
Fig 5. Normalized On-Resistance
Vs. Temperature
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1.0
1.2
1.4
1.6
A
1.8
Fig 4. Typical Source-Drain Diode
Forward Voltage
RDS(on) , Drain-to-Source On Resistance
R D S(on) , Drain-to-Source On Resistance
(N orm alized)
1.5
-40
0.8
0.8
I D = 1.7A
-60
VG S = 0V
0.6
V S D , Sourc e-to-D rain V oltage (V )
V G S , G a te -to -S o u rce V o lta g e (V )
2.0
10
V D S , D rain-to-S ource Voltage (V )
0.6
0.4
V
GS
0.2
= 2.5V
V G S = 5.0V
0.0
0
2
4
6
A
I D , D ra in C urren t (A )
Fig 6. Typical On-Resistance Vs. Drain
Current
3
N - Channel
0.13
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10us
0.11
0.09
I D , Drain Current (A)
R D S (o n ) , D ra in -to -S o u rc e O n R e s is ta n c e
(Ω
IRF7507
I D = 2.4 A
10
100us
1ms
1
10ms
0.07
0.05
2
3
4
5
6
7
8
A
TC = 25 ° C
TJ = 150 ° C
Single Pulse
0.1
1
V G S , G ate-to-S ource V oltage (V )
Fig 7. Typical On-Resistance Vs. Gate
Voltage
V GS =
C is s =
C rs s =
C o ss =
C , C a p a c ita n c e ( p F )
400
10
0V ,
f = 1M H z
C gs + C g d , Cd s S H O R TE D
C gd
C ds + C gd
C iss
300
C oss
200
C rss
100
0
A
1
10
100
V D S , D rain-to-S ource V oltage (V )
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
4
100
Fig 8. Maximum Safe Operating Area
-V G S , G ate-to-S ourc e V oltage (V )
500
10
VDS , Drain-to-Source Voltage (V)
I D = 1.7A
V D S = 16V
8
6
4
2
FO R TE S T C IR C U IT
S E E F IG U R E 9
0
0
2
4
6
8
A
10
Q G , Total G ate C harge (nC )
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
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IRF7507
P - Channel
100
100
VGS
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
VGS
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
TOP
10
-ID , D rain-to-S ourc e C urrent (A )
-I D , D rain-to-S ourc e C urrent (A )
TOP
1
0.1
-1.5V
20µs P U LS E W ID TH
TJ = 25°C
A
0.01
0.1
1
10
1
0.1
-1.5V
20µ s P U LS E W ID TH
TJ = 150°C
0.01
0.1
10
Fig 11. Typical Output Characteristics
-I S D , R everse D rain C urrent (A )
-I D , D rain-to-S ource C urrent (A )
10
T J = 2 5 °C
T J = 1 5 0 °C
1
0.1
V D S = -1 0 V
2 0 µ s P U L S E W ID T H
0.01
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
T J = 1 50 °C
1
T J = 2 5°C
0.1
V G S = 0V
0.01
A
0.4
-VG S , G a te -to -S o u rce V o lta g e (V )
0.5
V G S = -4.5V
0.0
0
20
40
60
80
A
100 120 140 160
T J , Junction Tem perature (°C )
Fig 15. Normalized On-Resistance
Vs. Temperature
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R DS (on), Drain-to-Source On Resistance
1.0
-20
1.0
A
1.2
1.0
1.5
-40
0.8
Fig 14. Typical Source-Drain Diode
Forward Voltage
I D = -1.2A
-60
0.6
-VS D , S ourc e-to-D rain V oltage (V )
Fig 13. Typical Transfer Characteristics
R D S (on ) , D rain-to-S ource O n R esistance
(N orm alized)
A
10
Fig 12. Typical Output Characteristics
10
2.0
1
-VD S , D rain-to-Source V oltage (V)
-V D S , D rain-to-S ource Voltage (V )
0.8
0.6
VGS = -2.5V
0.4
VGS = -5.0V
0.2
0.0
0.0
0.5
1.0
1.5
2.0
-I D , Drain Current (A)
Fig 16. Typical On-Resistance Vs. Drain
Current
5
IRF7507
P - Channel
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
0.250
-IID , Drain Current (A)
R DS (on) , Drain-to-Source On Resistance
0.300
ID = -1.7A
0.200
0.150
0.100
2
3
4
5
6
7
10
100us
1ms
1
10ms
TC = 25 °C
TJ = 150 °C
Single Pulse
0.1
8
1
10
-VGS , Gate-to-Source Voltage (V)
Fig 17. Typical On-Resistance Vs. Gate
Voltage
V GS
C iss
C rs s
C oss
C , C ap ac itan c e (p F )
400
=
=
=
=
Fig 18. Maximum Safe Operating Area
10
0V,
f = 1MHz
C gs + C gd , C ds S H O R TE D
C gd
C ds + C gd
-V G S , G ate-to-S ource V oltage (V )
500
C is s
300
C oss
200
C rs s
100
0
10
I D = -1.2A
V D S = -16V
8
6
4
2
FOR TES T C IR C U IT
SE E FIG U R E 19
0
A
1
100
-VDS , Drain-to-Source Voltage (V)
0
100
2
4
6
8
A
10
Q G , Total G ate C h arge (nC )
-V D S , D rain-to-S ource V oltage (V )
Fig 20. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 19. Typical Capacitance Vs.
Drain-to-Source Voltage
N-P - Channel
Thermal Response (Z thJA )
1000
100
D = 0.50
0.20
10
0.10
0.05
P DM
0.02
0.01
t1
1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 21. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
6
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IRF7507
Package Outline
Micro8 Outline
Dimensions are shown in millimeters (inches)
LE AD A S S IG N M EN T S
IN C H ES
D IM
D
M ILLIM E TE R S
M IN
M AX
M IN
A
.0 36
.0 44
0 .9 1
1 .11
A1
.0 04
.0 08
0 .1 0
0 .20
B
.0 10
.0 14
0 .2 5
0 .36
C
.005
.0 07
0 .13
0.18
D
.116
.1 20
2 .95
3.05
e
.0 256 B A SIC
0 .65 BA S IC
e1
.0 128 B A SIC
0 .33 BA S IC
E
.1 16
.1 20
2.9 5
3 .0 5
H
.188
.1 98
4 .78
5.03
e
L
.0 16
.026
0 .4 1
0 .66
6X
θ
0°
6°
0°
6°
3
-B-
D D D D
D 1 D1 D 2 D 2
8 7 6 5
8 7 6 5
S IN G LE
D U AL
8 7 6 5
3
H
E
0.25 (.010)
-A-
M
A
M
1 2 3 4
1 2 3 4
S S S G
S1 G 1 S2 G 2
1 2 3 4
MAX
e1
R E C O M M E ND E D FO O T P RIN T
θ
1.04
( .041 )
8X
A
-C B
0.10 (.004)
A1
8X
0.08 (.003)
M
C A S
L
8X
B S
0.38
8X
( .015 )
C
8X
3.20
( .126 )
4.24
5.28
( .167 ) ( .208 )
NO TES :
1 D IM E N S IO N IN G A N D T O L E R A N C IN G P E R A N S I Y 1 4 .5 M -1 9 8 2 .
2 C O N T R O L L IN G D IM E N S IO N : IN C H .
0.65 6X
( .0256 )
3 D IM E N S IO N S D O N O T IN C L U D E M O L D F L A S H .
Part Marking Information
Micro8
A
D A T E C O D E (YW W )
Y = LA S T D IG IT O F YE A R
W W = W EE K
E X AM PLE : T H IS IS A N IR F 7501
451
7501
PART NUMBER
TO P
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7
IRF7507
Tape & Reel Information
Micro8
Dimensions are shown in millimeters (inches)
T ER M IN A L N U M B E R 1
12 .3 ( .4 8 4 )
11 .7 ( .4 6 1 )
8 .1 ( .31 8 )
7 .9 ( .31 2 )
F E E D D IR E C T IO N
N O TE S :
1 . O U TL IN E C O N FO R M S T O E IA -4 8 1 & E IA -54 1 .
2 . C O N T R O L L IN G D IM E N SIO N : M IL L IM ET E R .
33 0.00
(1 2 .9 9 2 )
M AX.
1 4 .4 0 ( .5 6 6 )
1 2 .4 0 ( .4 8 8 )
NO TES :
1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/
Data and specifications subject to change without notice.
12/98
8
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