ETC IRF6216

PD - 94297
IRF6216
SMPS MOSFET
HEXFET® Power MOSFET
Applications
Reset Switch for Active Clamp Reset
DC-DC converters
VDSS
l
Benefits
Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
l
-150V
RDS(on) max
ID
0.240Ω@VGS =-10V -2.2A
A
D
S
1
8
S
2
7
D
S
3
6
D
G
4
5
D
SO-8
T o p V ie w
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation„
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
Units
-2.2
-1.9
-19
2.5
0.02
± 20
7.8
-55 to + 150
A
W
W/°C
V
V/ns
°C
300 (1.6mm from case )
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient „
Typ.
Max.
Units
–––
–––
20
50
°C/W
Notes  through „ are on page 8
www.irf.com
1
02/12/02
IRF6216
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
V(BR)DSS
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
-150
–––
–––
-3.0
–––
–––
–––
–––
Typ.
–––
-0.17
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250µA
––– V/°C Reference to 25°C, ID = -1mA ƒ
0.240
Ω
VGS = -10V, ID = -1.3A ƒ
-5.0
V
VDS = VGS, ID = -250µA
-25
VDS = -150V, VGS = 0V
µA
-250
VDS = -120V, VGS = 0V, TJ = 125°C
-100
VGS = -20V
nA
100
VGS = 20V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
2.7
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
33
7.2
15
18
15
33
26
1280
220
53
1290
99
220
Max. Units
Conditions
–––
S
VDS = -50V, ID = -1.3A
49
ID = -1.3A
11
nC
VDS = -120V
23
VGS = -10V,
–––
VDD = -75V
–––
ID = -1.3A
ns
–––
RG = 6.5Ω
–––
VGS = -10V ƒ
–––
VGS = 0V
–––
VDS = -25V
–––
pF
ƒ = 1.0MHz
–––
VGS = 0V, VDS = -1.0V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = -120V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 0V to -120V
Avalanche Characteristics
Parameter
EAS
IAR
Single Pulse Avalanche Energy‚
Avalanche Current
Typ.
Max.
Units
–––
–––
200
-4.0
mJ
A
Diode Characteristics
IS
ISM
VSD
trr
Qrr
2
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
-2.2
–––
–––
-19
–––
–––
–––
–––
80
310
-1.6
120
460
A
V
nS
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -1.3A, VGS = 0V
TJ = 25°C, IF = -1.3A
di/dt = -100A/µs ƒ
D
S
ƒ
www.irf.com
IRF6216
100
TOP
10
100
VGS
-15V
-12V
-10V
-8.0V
-7.0V
TOP
BOTTOM
-I , Drain-to-Source Current (A)
BOTTOM
1
0.1
0.1
1
10
-5.0V
1
D
20µs PULSE WIDTH
20µs PULSE WIDTH
T J= 25 ° C
0.01
10
VGS
-15V
-12V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
T J= 150
0.1
0.1
100
1
°C
10
100
-V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
2.0
1
V DS= -50V
20µs PULSE WIDTH
5.0
5.5
6.0
6.5
7.0
7.5
-V GS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
8.0
(Normalized)
TJ = 150 ° C
10
RDS(on) , Drain-to-Source On Resistance
-I D, Drain-to-Source Current (A)
TJ = 25 ° C
0.1
I D = -2.2A
1.5
1.0
0.5
V GS = -10V
0.0
-60
-40
-20
0
20
40
60
TJ , Junction Temperature
80
100
120
140
160
( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF6216
10000
12
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
ID = -1.3A
VDS = -120V
VDS = -75V
VDS = -30V
10
Ciss
1000
-V GS, Gate-to-Source Voltage (V)
C, Capacitance(pF)
Coss = Cds + Cgd
Coss
100
Crss
10
8
6
4
2
0
1
10
100
0
1000
15
20
25
30
35
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
-I D, Drain-to-Source Current (A)
100
-I SD, Reverse Drain Current (A)
10
QG , Total Gate Charge (nC)
-VDS , Drain-to-Source Voltage (V)
10
TJ = 150 ° C
TJ = 25 ° C
1
V GS= 0 V
0.1
0.4
0.6
0.8
1.0
-V SD,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
5
1.2
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
100µsec
1msec
1
10msec
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
100
1000
-VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
www.irf.com
IRF6216
2.5
RD
VDS
VGS
2.0
D.U.T.
RG
-
VDD
-I D, Drain Current (A)
+
1.5
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
1.0
Fig 10a. Switching Time Test Circuit
0.5
VDS
90%
0.0
25
50
75
100
125
150
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
(Z thJA )
100
D = 0.50
0.20
10
Thermal Response
0.10
0.05
P DM
0.02
1
t1
0.01
t2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
2. Peak T
0.1
0.0001
0.001
0.01
0.1
1
t1/ t
2
J = P DM x Z thJA
10
+T A
100
1000
t 1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
IRF6216
R DS(on) , Drain-to -Source On Resistance ( Ω )
RDS (on) , Drain-to-Source On Resistance (Ω)
0.23
0.22
VGS = -10V
0.21
0.20
0.19
0
2
4
6
8
10
12
14
16
1.50
1.00
0.50
ID = -2.2A
0.00
4.5
18
6.0
7.5
9.0
10.5
12.0
13.5
15.0
-V GS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
QG
-VGS
50KΩ
.2µF
12V
QGS
.3µF
QGD
500
D.U.T.
+VDS
VG
-3.2A
VGS
400
IG
ID
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
L
VD S
I AS
D .U .T
RG
IA S
-20V
tp
VD D
A
D R IV E R
0 .01 Ω
E AS , Single Pulse Avalanche Energy (mJ)
Charge
-3mA
BOTTOM
V (BR)DSS
15V
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
-4.0A
300
200
100
0
25
tp
6
ID
-1.8A
TOP
50
75
100
Starting Tj, Junction Temperature
125
150
( ° C)
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
www.irf.com
IRF6216
SO-8 Package Details
D IM
D
-B -
5
8
E
-A -
1
7
2
5
A
6
3
e
6X
5
H
0 .2 5 (.0 1 0 )
4
M
A M
θ
e1
K x 4 5°
-C -
0 .1 0 (.0 0 4 )
B 8X
0 .2 5 (.0 1 0 )
A1
L
8X
6
C
8X
M C A S B S
NOTES:
1 . D IM E N S IO N IN G A N D T O L E R A N C IN G P E R A N S I Y 1 4 .5 M -1 9 8 2 .
2 . C O N T R O L L IN G D IM E N S IO N : IN C H .
3 . D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ).
4 . O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S -0 1 2 A A .
5 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S
M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .2 5 (.0 0 6 ).
6 D IM E N S IO N S IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O A S U B S T R A T E ..
M IN
M AX
.05 32
.06 88
1.3 5
1.75
.00 40
.00 98
0.1 0
0.25
B
.01 4
.01 8
0.3 6
0.46
C
.00 75
.009 8
0.19
0.25
D
.18 9
.196
4.80
4.98
E
.15 0
.15 7
3.8 1
3.99
e1
A
M ILLIM E T E R S
M AX
A1
e
θ
IN C H E S
M IN
.05 0 B A S IC
1.27 B A S IC
.02 5 B A S IC
0 .635 B A S IC
H
.22 84
.244 0
K
.01 1
.01 9
0.2 8
5.8 0
0.48
6.20
L
0.16
.05 0
0.4 1
1.27
θ
0°
8°
0°
8°
R E C O M M E N D E D F O O T P R IN T
0 .7 2 (.0 2 8 )
8X
6 .4 6 ( .2 5 5 )
1 .7 8 (.0 7 0 )
8X
1 .2 7 ( .0 5 0 )
3X
SO-8 Part Marking
www.irf.com
7
IRF6216
SO-8 Tape and Reel
TER M IN AL N UM B ER 1
1 2.3 ( .484 )
1 1.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
F EE D D IRE C TIO N
N OT E S :
1 . CO NT RO L L ING DIM E NSIO N : M IL L IM E T E R .
2 . A L L D IM E N S ION S A R E S H O W N IN M ILL IM E TE R S (INC HE S ).
3 . OU TL IN E CO N FO RM S T O E IA -4 8 1 & E IA -5 4 1 .
33 0.00
(12.992)
M AX .
14.4 0 ( .566 )
12.4 0 ( .488 )
N O T ES :
1 . CO NT RO LL ING D IM EN SIO N : M ILLIME TER .
2 . O U TLIN E C O NF O RM S T O E IA-48 1 & E IA -54 1.
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting TJ = 25°C, L = 25mH
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
„ When mounted on 1 inch square copper board.
RG = 25Ω, IAS = -4.0A.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.02/02
8
www.irf.com