Transistor 2SC4835 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit: mm 2.1±0.1 ■ Features 0.3–0 0.65 +0.1 0.425 1 3 2 Parameter Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 10 V Emitter to base voltage VEBO 2 V Collector current IC 80 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics Parameter +0.1 0.15–0.05 0 to 0.1 (Ta=25˚C) 0.7±0.1 ■ Absolute Maximum Ratings 0.9±0.1 0.2 ● 1.3±0.1 ● Low noise figure NF. High gain. High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1.25±0.1 0.65 ● 2.0±0.2 ● 0.425 1:Base 2:Emitter 3:Collector 0.2±0.1 EIAJ:SC–70 S–Mini Type Package Marking symbol : 3M (Ta=25˚C) Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 10V, IE = 0 1 µA Emitter cutoff current IEBO VEB = 2V, IC = 0 1 µA Collector to base voltage VCBO IC = 10µA, IE = 0 15 V Collector to emitter voltage VCEO IC = 100µA, IB = 0 10 V 20mA* Forward current transfer ratio hFE VCE = 8V, IC = Transition frequency fT VCE = 8V, IC = 15mA, f = 800MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz Foward transfer gain | S21e |2 VCE = 8V, IC = 15mA, f = 800MHz Maximum unilateral power gain GUM VCE = 8V, IC = 15mA, f = 800MHz 15 Noise figure NF VCE = 8V, IC = 7mA, f = 800MHz 1.3 50 150 5 6 200 GHz 0.7 11 1.2 14 pF dB dB 2 * dB Pulse measurement 1 2SC4835 Transistor PC — Ta IC — VCE 120 IB=200µA 20 160 120 80 40 180µA 160µA 16 140µA 120µA 12 100µA 80µA 8 60µA 40µA 4 25˚C Ta=75˚C –25˚C 80 60 40 20 20µA 0 40 60 80 100 120 140 160 0 0 2 10 3 Ta=75˚C 25˚C –25˚C 0.1 0.03 0.01 0.1 0.3 1 3 10 30 400 Ta=75˚C 300 25˚C 200 –25˚C 100 0.3 0.4 1 3 10 1 3 10 30 30 100 Collector to base voltage VCB (V) 24 2.0 6 4 2 0.3 1 3 10 30 100 Collector current IC (mA) NF — IC 12 VCE=8V f=800MHz Ta=25˚C 20 16 12 8 4 0 0.1 1.6 8 0 0.1 100 VCE=8V (Rg=50Ω) f=800MHz Ta=25˚C 10 Noise figure NF (dB) Maximum unilateral power gain GUM (dB) 0.8 1.2 VCE=8V f=800MHz Ta=25˚C GUM — IC 1.2 0.8 10 Collector current IC (mA) IE=0 f=1MHz Ta=25˚C 0.3 0.4 Base to emitter voltage VBE (V) fT — IC 500 0 0.1 100 1.6 0 0.1 0 12 Cob — VCB 2.0 12 VCE=8V Collector current IC (mA) 2.4 10 600 Forward current transfer ratio hFE 30 0.3 8 hFE — IC IC/IB=10 1 6 Collector to emitter voltage VCE (V) VCE(sat) — IC 100 4 Transition frequency fT (GHz) 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) 100 Collector current IC (mA) 200 0 Collector output capacitance Cob (pF) VCE=8V Ta=25˚C 0 2 IC — VBE 24 Collector current IC (mA) Collector power dissipation PC (mW) 240 8 6 4 2 0.3 1 3 10 30 Collector current IC (mA) 100 0 0.1 0.3 1 3 10 30 Collector current IC (mA) 100