PANASONIC 2SC3904

Transistor
2SC3904
Silicon NPN epitaxial planer type
For 2GHz band low-noise amplification
Unit: mm
+0.2
2.8 –0.3
1.45
0.95
3
+0.1
1.9±0.2
0.65±0.15
1
0.95
+0.2
●
0.65±0.15
High transition frequency fT.
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
2.9 –0.05
●
0.4 –0.05
■ Features
+0.25
1.5 –0.05
Symbol
Ratings
Unit
Collector to base voltage
VCBO
15
V
Collector to emitter voltage
VCEO
10
V
Emitter to base voltage
VEBO
2
V
Collector current
IC
65
mA
Collector power dissipation
PC
200
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
■ Electrical Characteristics
Parameter
+0.1
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
0 to 0.1
Parameter
0.16 –0.06
(Ta=25˚C)
0.8
1.1 –0.1
■ Absolute Maximum Ratings
+0.2
2
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
Marking symbol : 3S
(Ta=25˚C)
Symbol
Conditions
min
typ
max
Unit
Collector cutoff current
ICBO
VCB = 10V, IE = 0
1
µA
Emitter cutoff current
IEBO
VEB = 1V, IC = 0
1
µA
Forward current transfer ratio
hFE
VCE = 8V, IC = 20mA
50
120
Transition frequency
fT
VCE = 8V, IC = 20mA, f = 0.8GHz
7.0
8.5
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
Foward transfer gain
| S21e |2
VCE = 8V, IC = 20mA, f = 1.5GHz
Maximum unilateral power gain
GUM
VCE = 8V, IC = 20mA, f = 1.5GHz
10
Noise figure
NF
VCE = 8V, IC = 7mA, f = 1.5GHz
2.2
0.6
7
300
GHz
1
9
pF
dB
dB
3
dB
1
Transistor
2SC3904
PC — Ta
IC — VCE
120
IB=250µA
25
160
120
80
40
20
200µA
15
150µA
10
100µA
5
50µA
60
80 100 120 140 160
2
1
0.3
Ta=75˚C
0.1
25˚C
–25˚C
0.03
0.01
0.003
3
10
30
0.4
0.2
0
30
100
Collector to base voltage VCB (V)
120
25˚C
80
–25˚C
40
0.8
1
3
10
12
30
10
1.2
8
6
4
2
100
1
3
10
30
100
Collector current IC (mA)
NF — IC
6
VCE=8V
f=1.5GHz
Ta=25˚C
10
VCE=8V
f=1.5GHz
Ta=25˚C
5
8
6
4
2
0
0.1
1.0
0
0.3
Noise figure NF (dB)
Maximum unilateral power gain GUM (dB)
0.4
0.6
VCB=8V
f=1.5GHz
Ta=25˚C
GUM — IC
0.6
10
0.2
Base to emitter voltage VBE (V)
Collector current IC (mA)
0.8
3
0
fT — IC
Ta=75˚C
160
0
0.1
100
IE=0
f=1MHz
Ta=25˚C
1
12
12
Cob — VCB
1.0
10
200
Collector current IC (mA)
1.2
8
VCE=8V
Forward current transfer ratio hFE
3
1
6
240
IC/IB=10
0.3
4
hFE — IC
10
–25˚C
40
Collector to emitter voltage VCE (V)
VCE(sat) — IC
0.001
0.1
Ta=75˚C
60
0
0
Transition frequency fT (GHz)
40
25˚C
80
20
0
20
Ambient temperature Ta (˚C)
Collector to emitter saturation voltage VCE(sat) (V)
100
Collector current IC (mA)
200
0
Collector output capacitance Cob (pF)
VCE=8V
Ta=25˚C
0
2
IC — VBE
30
Collector current IC (mA)
Collector power dissipation PC (mW)
240
4
3
2
1
0.3
1
3
10
30
Collector current IC (mA)
100
0
0.1
0.3
1
3
10
30
Collector current IC (mA)
100