Transistor 2SC5378 Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit: mm 2.1±0.1 ■ Features 0.3–0 0.65 +0.1 0.425 1 3 2 Parameter Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 8 V Emitter to base voltage VEBO 2 V Collector current IC 80 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics +0.1 0.15–0.05 0 to 0.1 (Ta=25˚C) 0.7±0.1 ■ Absolute Maximum Ratings 0.9±0.1 0.2 ● 1.3±0.1 ● 1.25±0.1 0.65 ● Low noise figure NF. High gain. High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.0±0.2 ● 0.425 1:Base 2:Emitter 3:Collector 0.2±0.1 EIAJ:SC–70 S–Mini Type Package Marking symbol : HT (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 10V, IE = 0 1 µA Emitter cutoff current IEBO VEB = 1V, IC = 0 1 µA *1 VCE = 5V, IC = 10mA 80 200 Forward current transfer ratio hFE Collector output capacitance Cob VCB = 5V, IE = 0, f = 1MHz Transition frequency fT VCE = 5V, IC = 10mA, f = 2GHz 7 Noise figure NF VCE = 5V, IC = 3mA, f = 1GHz 1.6 | S21e Foward transfer gain *1h FE |2 VCE = 5V, IC = 10mA, f = 1GHz 0.6 8.5 11 1 pF GHz 2 dB dB Rank classification Rank Q R S hFE 80 ~ 115 95 ~ 155 135 ~ 200 1 2SC5378 Transistor PC — Ta IC — VCE 180 VCE=5V 100 160 120 80 40 IB=600µA 80 500µA 400µA 60 300µA 40 200µA 20 100µA 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) Forward current transfer ratio hFE Ta=25˚C 0 2 hFE — IC 120 Collector current IC (mA) Collector power dissipation PC (mW) 200 150 Ta=75˚C 120 25˚C 90 –25˚C 60 30 0 0 2 4 6 8 10 Collector to emitter voltage VCE (V) 1 3 10 30 100 300 Collector current IC (mA) 1000