Transistor 2SC3934 Silicon NPN epitaxial planer type For high-frequency wide-band low-noise amplification Unit: mm 2.1±0.1 ■ Features 0.425 0.3–0 0.65 1.3±0.1 +0.1 1.25±0.1 1 0.65 ● High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.0±0.2 ● 0.425 3 2 Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 12 V Emitter to base voltage VEBO 2.5 V Peak collector current ICP 50 mA Collector current IC 30 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics Parameter +0.1 Ratings 0 to 0.1 Symbol 0.7±0.1 Parameter 0.15–0.05 0.2 (Ta=25˚C) 0.9±0.1 ■ Absolute Maximum Ratings 1:Base 2:Emitter 3:Collector 0.2±0.1 EIAJ:SC–70 S–Mini Type Package Marking symbol : 1U (Ta=25˚C) Symbol Conditions min typ VCB = 10V, IE = 0 Collector cutoff current ICBO Emitter cutoff current IEBO VEB = 2V, IC = 0 Forward current transfer ratio hFE VCE = 10V, IC = 10mA Transition frequency fT VCE = 10V, IC = 10mA, f = 800MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz |2 max Unit 100 µA 1 µA 40 4.5 GHz 1.2 pF Foward transfer gain | S21e VCE = 10V, IC = 20mA, f = 800MHz 9 12 dB Maximum unilateral power gain GUM VCE = 10V, IC = 20mA, f = 800MHz 12 14 dB Noise figure NF VCE = 10V, IC = 5mA, f = 800MHz 1.3 2.5 dB 1 2SC3934 Transistor PC — Ta IC — VCE 60 25 160 120 80 40 IB=300µA 20 250µA 15 200µA 10 150µA 100µA 5 Ta=75˚C –25˚C 40 30 20 10 50µA 0 40 60 80 100 120 140 160 0 0 2 4 10 12 0 10 3 1 0.3 Ta=75˚C 25˚C 1 3 10 30 200 160 Ta=75˚C 120 25˚C 80 –25˚C 40 0 0.1 100 0.3 1 Cob — VCB 6 5 4 3 2 3 10 30 0 –1 100 –3 NF — IC 0.8 0.6 0.4 –10 –100 S11, S22 1 0.8 Rg=50Ω VCE=10V f=800MHz 7 –30 Collector current IC (mA) 8 Noise figure NF (dB) 1.0 Ta=25˚C VCE=10V 7 Collector current IC (mA) IE=0 f=1MHz Ta=25˚C 1.5 2 0.4 3 4 0.2 5 5 10 4 .2 0 .4 .6 .8 1 800MHz 500MHz 3 1.5 2 3 4 5 1000MHz S22 800MHz 500MHz 10 30 100 Collector to base voltage VCB (V) –10 –5 –4 – 0.2 2 –3 – 0.4 –2 – 0.6 0 3 10 1000MHz S11 1 1 VCE=10V IC=20mA E: Earth 6 0.2 0 2.0 1 Collector current IC (mA) 1.2 1.6 8 –25˚C 0.3 1.2 VCE=10V Forward current transfer ratio hFE 30 0.8 fT — IC 240 IC/IB=10 0.01 0.1 0.4 Base to emitter voltage VBE (V) hFE — IC 100 0.03 8 Collector to emitter voltage VCE (V) VCE(sat) — IC 0.1 6 Transition frequency fT (GHz) 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) 25˚C 50 Collector current IC (mA) 200 0 Collector output capacitance Cob (pF) VCE=10V Ta=25˚C 0 2 IC — VBE 30 Collector current IC (mA) Collector power dissipation PC (mW) 240 1 3 10 30 Collector current IC (mA) 100 – 0.8 –1 –1.5 2SC3934 Transistor S12, S21 VCE=10V IC=20mA E: Earth +90˚ +60˚ +120˚ 1000MHz 800MHz S21 500MHz +150˚ +30˚ 800MHz 1000MHz ±180˚ –10 –15 –20 –25 –30 5 500MHz 10 15 S12 –150˚ 20 0˚ –30˚ –120˚ –60˚ –90˚ 3