Transistor 2SC5379 Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit: mm 1.6±0.15 Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 8 V Emitter to base voltage VEBO 2 V Collector current IC 80 mA Collector power dissipation PC 125 mW Junction temperature Tj 125 ˚C Storage temperature Tstg –55 ~ +125 ˚C ■ Electrical Characteristics +0.1 0.5 0.5 3 2 (Ta=25˚C) Parameter 1 +0.1 0.15–0.05 0 to 0.1 ■ Absolute Maximum Ratings 0.4 0.45±0.1 0.3 ● 1.6±0.1 ● Low noise figure NF. High gain. High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. 1.0±0.1 ● 0.75±0.15 ● 0.8±0.1 0.2–0.05 ■ Features 0.4 1:Base 2:Emitter 3:Collector 0.2±0.1 EIAJ:SC–75 SS–Mini Type Package Marking symbol : HT (Ta=25˚C) Parameter Conditions Symbol min typ max Unit Collector cutoff current ICBO VCB = 10V, IE = 0 1 µA Emitter cutoff current IEBO VEB = 1V, IC = 0 1 µA * Forward current transfer ratio hFE Transition frequency fT VCE = 5V, IC = 10mA, f = 2GHz Collector output capacitance Cob VCB = 5V, IE = 0, f = 1MHz Foward transfer gain | S21e |2 VCE = 5V, IC = 10mA, f = 1GHz Noise figure NF VCE = 5V, IC = 3mA, f = 1GHz *h FE VCE = 5V, IC = 10mA 80 200 7.0 0.6 8.5 GHz 1.0 11.0 1.6 pF dB 2 dB Rank classification Rank Q R S hFE 80 ~ 115 95 ~ 155 135 ~ 200 Marking Symbol HTQ HTR HTS 1 2SC5379 Transistor PC — Ta IC — VCE 60 50 100 75 50 25 50 40 IB=300µA 250µA 30 200µA 20 150µA 100µA 10 25˚C 40 Ta=75˚C –25˚C 30 20 10 50µA 0 40 60 80 100 120 140 160 0 0 1 2 10 3 1 Ta=75˚C 25˚C –25˚C 0.03 0.01 0.1 0.3 1 3 10 6 0 30 200 Ta=75˚C 160 25˚C 120 –25˚C 80 40 1 3 10 30 6 4 2 4 8 10 Collector to base voltage VCB (V) 8 12 16 20 Collector current IC (mA) NF — IC 3.0 VCE=5V f=1GHz Ta=25˚C 12 2.4 9 6 3 1.8 1.2 0.6 VCE=5V f=1GHz Ta=25˚C 0 4 6 0 Noise figure NF (dB) Forward transfer gain |S21e|2 (dB) 0 2 8 100 15 0.2 1.2 VCE=5V | S21e |2 — IC 1.0 1.0 0 0.3 Cob — VCB 0.4 0.8 fT — IC Collector current IC (mA) 0.6 0.6 10 0 0.1 100 0.8 0.4 VCE=5V Collector current IC (mA) 0 0.2 Base to emitter voltage VBE (V) 240 Forward current transfer ratio hFE 30 0.1 5 hFE — IC IC/IB=10 0.3 4 Collector to emitter voltage VCE (V) VCE(sat) — IC 100 3 Transition frequency fT (GHz) 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) Collector current IC (mA) 125 0 Collector output capacitance Cob (pF) VCE=5V Ta=25˚C 0 2 IC — VBE 60 Collector current IC (mA) Collector power dissipation PC (mW) 150 0 0 4 8 12 16 Collector current IC (mA) 20 0 2 4 6 8 Collector current IC (mA) 10